Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no ?-H.

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Abstract: Embodiments include a method of processing a hardmask that includes forming an alloyed carbon hardmask over an underlying layer. In an embodiment, the alloyed carbon hardmask is alloyed with metallic-carbon fillers. The embodiment further includes patterning the alloyed carbon hardmask and transferring the pattern of the alloyed carbon hardmask into the underlying layer. According to an embodiment, the method may further include removing the metallic component of the metallic-carbon fillers from the alloyed carbon hardmask to form a porous carbon hardmask. Thereafter, the porous hardmask may be removed. In an embodiment, the metallic component of the metallic-carbon fillers may include flowing a processing gas into a chamber that volatizes the metallic component of the metallic-carbon fillers.

Abstract: A filtration system includes a particle counter configured to detect particles in a volume of fluid. The filtration system includes a control valve in fluid communication with the particle counter. The filtration system includes a controller in communication with the particle counter and the control valve. The controller may be configured to determine whether the detected particles exceed a predetermined threshold. The controller may be configured to command the control valve. The filtration system includes a filter in fluid communication with the control valve.

Abstract: Processing methods comprising exposing a substrate to an optional nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal oxyhalide compound and a second reactive gas to form a metal film on the substrate.

Abstract: Methods of depositing a metal-containing film by exposing a substrate surface to a first precursor and a reactant, where one or more of the first precursor and the react comprises a compound having the general formula of one or more of M(XR3)2, M(XR3)3, M(XR3)4, M(XR3)5 and M(XR3)6, where M is selected from the group consisting of Al, Ti, Ta, Zr, La, Hf, Ce, Zn, Cr, Sn, V and combinations thereof, each X is one or more of C, Si and Ge and each R is independently a methyl or ethyl group and comprises substantially no ?-H.

Abstract: Processing methods comprising exposing a substrate to a nucleation promoter followed by sequential exposure of a first reactive gas comprising a metal-containing compound and a second reactive gas to form a metal-containing film on the substrate.

Abstract: An illumination device and methods are provided herein for avoiding over-current and over-power conditions in one or more power converters included within the illumination device. The illumination device may include at least a plurality of light emitting diode (LED) chains, a driver circuit, at least one power converter, and a control circuit. In some embodiments, the control circuit may be generally configured for determining a maximum safe current level and/or a maximum safe power level attributed to the power converter(s) at a present operating temperature, and for adjusting respective drive currents supplied to the plurality of LED chains by the driver circuit, so as not to exceed the maximum safe current level or the maximum safe power level at the present operating temperature. In some embodiments, a temperature sensor may be included within the illumination device for measuring the operating temperature presently associated with the power converter(s).

Abstract: Methods of selectively etching metals and metal nitrides from the surface of a substrate are described. The etch selectively removes metals and metal nitrides relative to silicon-containing layers such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The etch removes material in a conformal manner by including an oxidation operation which creates a thin uniform metal oxide. The thin uniform metal oxide is then removed by exposing the metal oxide to a metal-halogen precursor in a substrate processing region. The metal oxide may be removed to completion and the etch may stop once the uniform metal oxide layer is removed. Etches described herein may be used to uniformly trim back material on high aspect ratio features which ordinarily show higher etch rates near the opening of a gap compared to deep within the gap.

Abstract: Semiconductor devices and methods of making semiconductor devices with a barrier layer comprising manganese nitride are described. Also described are semiconductor devices and methods of making same with a barrier layer comprising Mn(N) and, optionally, an adhesion layer.

Abstract: Methods of depositing a metal layer utilizing organometallic compounds. A substrate surface is exposed to a gaseous organometallic metal precursor and an organometallic metal reactant to form a metal layer (e.g., a copper layer) on the substrate.

Abstract: An illumination device and methods are provided herein for avoiding over-current and over-power conditions in one or more power converters included within the illumination device. The illumination device may generally include a plurality of light emitting diode (LED) chains, a driver circuit, at least one power converter, a temperature sensor and a control circuit. The LED chains may produce illumination for the illumination device at a chromaticity consistent with a chromaticity setting. The power converter(s) may be coupled for powering the LED chains, and may each comprise a maximum safe current level or a maximum safe power level, which varies with temperature. The temperature sensor may be coupled for measuring a present temperature associated with the power converters.

Abstract: An illumination device and methods are provided herein for avoiding over-current and over-power conditions in one or more power converters included within the illumination device. The illumination device may generally include a plurality of light emitting diode (LED) chains, a driver circuit, at least one power converter, and a control circuit. The LED chains may produce illumination for the illumination device at a chromaticity consistent with a chromaticity setting. The power converter(s) may be coupled for powering the LED chains, and may each comprise a maximum safe current level or a maximum safe power level, which varies with temperature. The control circuit may be configured for determining a maximum lumens value that can be safely produced by all LED chains at a predetermined safe temperature to achieve the chromaticity setting without exceeding the maximum safe current level or the maximum safe power level of the power converter(s) at the predetermined safe temperature.

Abstract: Described are methods and apparatuses for the stabilization of precursors, which can be used for the deposition of manganese-containing films. Certain methods and apparatus relate to lined ampoules and/or 2-electron donor ligands.

Abstract: Provided are precursors and methods of using same to deposit film consisting essentially of nickel. Certain methods comprise providing a substrate surface; exposing the substrate surface to a vapor comprising a precursor having a structure represented, without limitation to specific orientation, by: wherein R1 and R2 are each independently H or any C1-C3 alkyl group, R4 is trimethylsilyl or C1-C3 alkyl, and L is any ligand that does not contain oxygen; and exposing the substrate to a reducing gas to provide a film consisting essentially of nickel on the substrate surface.

Abstract: A system for transferring real-time video data over a network comprises a video source, a video encoder for encoding and compressing video data supplied by the video source and a first network interface controller for transmitting compressed video data on the network. Furthermore a second network interface controller for receiving compressed video data from the network, a video decoder for decoding the video data received by the second network interface controller, and an image processor for processing and/or displaying the decoded video data from the video decoder are provided. The network controllers are configured for transmitting and receiving data in a continuous data stream which is synchronized with a clock signal and in a format which prescribes a pulse sequence of individual bit groups of which at least one is used for video data.