Abstract: A method for depositing a germanium tin (Ge1-xSnx) semiconductor is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature and exposing the substrate to a germanium precursor and a tin precursor. The method may further include; depositing a germanium tin (Ge1-xSnx) semiconductor on the surface of the substrate, and exposing the germanium tin (Ge1-xSnx) semiconductor to a boron dopant precursor. Semiconductor device structures including a germanium tin (Ge1-xSnx) semiconductor formed by the methods of the disclosure are also provided.

Abstract: In some embodiments, a compound semiconductor is formed by diffusion of semiconductor species from a source semiconductor layer into semiconductor material in a substrate. The source semiconductor layer may be an amorphous or polycrystalline structure, and provides a source of semiconductor species for later diffusion into the other semiconductor material. Advantageously, such a semiconductor layer may be more conformal than an epitaxially grown, crystalline semiconductor layer. As a result, this more conformal semiconductor layer acts as a uniform source of the semiconductor species for diffusion into the semiconductor material in the substrate. In some embodiments, an interlayer is formed between the source semiconductor layer and the substrate, and then the interlayer is trimmed before depositing the source semiconductor layer. In some other embodiments, the source semiconductor layer is deposited directly on the substrate, and has an amorphous or polycrystalline structure.

Abstract: A method of manufacturing a hybrid substrate is disclosed, which comprises: bonding a first semiconductor substrate to a first combined substrate via at least one layer of dielectric material to form a second combined substrate, the first combined substrate includes a layer of III-V compound semiconductor and a second semiconductor substrate, the layer of III-V compound semiconductor arranged intermediate the layer of dielectric material and second semiconductor substrate; removing the second semiconductor substrate from the second combined substrate to expose at least a portion of the layer of III-V compound semiconductor to obtain a third combined substrate; and annealing the third combined substrate at a temperature about 250° C. to 1000° C. to reduce threading dislocation density of the layer of III-V compound semiconductor to obtain the hybrid substrate.

Abstract: In some embodiments, a compound semiconductor is formed by diffusion of semiconductor species from a source semiconductor layer into semiconductor material in a substrate. The source semiconductor layer may be an amorphous or polycrystalline structure, and provides a source of semiconductor species for later diffusion into the other semiconductor material. Advantageously, such a semiconductor layer may be more conformal than an epitaxially grown, crystalline semiconductor layer. As a result, this more conformal semiconductor layer acts as a uniform source of the semiconductor species for diffusion into the semiconductor material in the substrate. In some embodiments, an interlayer is formed between the source semiconductor layer and the substrate, and then the interlayer is trimmed before depositing the source semiconductor layer. In some other embodiments, the source semiconductor layer is deposited directly on the substrate, and has an amorphous or polycrystalline structure.

Abstract: At least one target virtual disk descriptor that describes at least one virtual disk associated with an existing target virtual machine in a target virtualized environment is merged with at least one source virtual disk descriptor that describes at least one virtual disk associated with a source. The merging is carried out to obtain at least one merged virtual disk descriptor compatible with the target virtualized environment. The at least one virtual disk associated with the existing target virtual machine in the target virtualized environment is replaced with the at least one virtual disk associated with the source, in accordance with the at least one merged virtual disk descriptor.

Abstract: The invention relates to a process for producing a p-n junction in a photovoltaic cell made of thin CZTS-based films, comprising: a) a step of depositing a film of precursors containing zinc, tin and copper, the amount of zinc being larger than that required to convert the precursors into a CZTS type photovoltaic material and b) a step of annealing the precursors, under a sulphur- and/or selenium-containing atmosphere, so as to obtain a photovoltaic film made of CZTS and a buffer layer made of ZnS1-xSex, where x is comprised between 0 and 1.

Abstract: At least one target virtual disk descriptor that describes at least one virtual disk associated with an existing target virtual machine in a target virtualized environment is merged with at least one source virtual disk descriptor that describes at least one virtual disk associated with a source. The merging is carried out to obtain at least one merged virtual disk descriptor compatible with the target virtualized environment. The at least one virtual disk associated with the existing target virtual machine in the target virtualized environment is replaced with the at least one virtual disk associated with the source, in accordance with the at least one merged virtual disk descriptor.

Abstract: At least one target virtual disk descriptor that describes at least one virtual disk associated with an existing target virtual machine in a target virtualized environment is merged with at least one source virtual disk descriptor that describes at least one virtual disk associated with a source. The merging is carried out to obtain at least one merged virtual disk descriptor compatible with the target virtualized environment. The at least one virtual disk associated with the existing target virtual machine in the target virtualized environment is replaced with the at least one virtual disk associated with the source, in accordance with the at least one merged virtual disk descriptor.

Abstract: Methods, apparatus and computer program products implement embodiments of the present invention that include loading a digital model to a digital manufacturing system having a manufacturing tolerance, and manufacturing, by the digital manufacturing system using the digital model, multiple objects. For each given object, one or more fingerprint measurements of the given object are collected from a fingerprint sensing device having a fingerprint resolution better than the manufacturing tolerance, and using the one or more fingerprint measurements, a unique digital fingerprint is created. The unique digital fingerprint can be stored to a provenance database. Subsequent to storing the unique digital fingerprints, one or more authentication measurements of an authentication object can be collected, and using the one or more authentication measurements, an authentication digital fingerprint can be created.

Abstract: A device includes a plurality of wires of nanometric or micrometric dimensions formed by a semiconductor material chosen from silicon, germanium and a silicon and germanium alloy. The device further includes pellets enhancing the mechanical strength and the optical absorption properties of the device. The pellets have a diameter between 100 nm and 1 ?m and are formed by spherical agglomerates of zinc oxide particles with a diameter between 10 mn and 200 nm. The pellets are in particular obtained by immersing the wires in a bath containing an alcohol-based solvent and zinc acetate under temperature and pressure conditions keeping the alcohol-based solvent in the liquid state and by thermal annealing of the wires transforming the zinc acetate into zinc oxide.