Abstract: The invention relates to a spring head screw assembly (8) incorporating a spring head screw (10) having a head (12) with a conical skirt (14) that widens towards the free end of a threaded shank which adjoins the head (12), wherein the spring head screw assembly (8) has a washer (30) which is located between the skirt and the threaded part (20) of the shank (16) in an unthreaded part (18) of the shank that has a bolt diameter (d0). The inner surface (22) of the skirt transitions into the shank at a radius (Ru), wherein the inner surface (22) forms a contact angle (?) with a support plane (EA). The support plane is defined by the end of the skirt facing the free end of the screw and is orthogonal to the screw axis. The shank has, between the support plane and the radius in the transition to the skirt, a cylindrical region having the bolt diameter.

Abstract: A system for identifying and determining predictions of an entity of interest (EOT) includes a processor configured to receive real-time FMV data of an area of interest (AOI); a memory operatively coupled to the processor and storing a machine learning algorithm for identifying the EOT in the AOI; a database for use in classifying the EOT and determining predictions associated with the EOT; and a translator operatively coupled to the processor and configured to cause the processor to operationally communicate with the machine learning algorithm. The processor may be further configured to correlate a stored video data with the current video data and cause the database to store the correlated video data with its associated EOT. The processor may be configured to determine predictions associated with the EOT by identifying trends in the correlated video data.

Abstract: The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.

Abstract: The invention includes a dielectric mode from ALD-type methods in which two or more different precursors are utilized with one or more reactants to form the dielectric material. In particular aspects, the precursors are aluminum and hafnium and/or zirconium for materials made from a hafnium precursor, the hafnium oxide is predominantly in a tetragonal crystalline phase.

Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

Abstract: A method leverages the file format information used by a target application to convert a source dataset into an encoding usable by the target application without converting the source dataset before migration and without modifying the target application. The source data when on the source system has random portions of various data types that are encoded in a source encoding based on data type. The target application, which typically processes data encoded in a target encoding that is based on data type, is able to process the source data despite the source encoding using file format information and a modified compiler library.

Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

Abstract: In some embodiments, the invention may include utilization of at least one iteration of an ALD pulse sequence that has the pulse subsets M2-M1-R- and M1-(R-M2-)x: where x is at least 2; where M1 is a first metal-containing precursor comprising a first metal, M2 is a second metal-containing precursor comprising a second metal different from the first metal, and R is a reactant which reacts with one or both of the first and second metals. The ALD pulse sequence forms material over a substrate, and such material includes the first and second metals. The hyphen between pulses means that the second pulse directly follows the first pulse, with the term “directly follows” indicating that the second pulse either immediately follows the first pulse or that only a purge separates the first and second pulses.

Abstract: The invention includes ALD-type methods in which two or more different precursors are utilized with one or more reactants to form a material. In particular aspects, the precursors are hafnium and aluminum, the only reactant is ozone, and the material is hafnium oxide predominantly in a tetragonal crystalline phase.

Abstract: An intermediate object layer can be used to shim the interfaces of an object so that a calling application can request services from the object without referencing the object. The intermediate object layer holds a reference to the object. The intermediate object layer also includes a method for releasing the reference to the object, to facilitate unloading or replacement of the object without having to shut down applications that have requested services from the object. The intermediate object layer can be used to shim multiple objects that have the same interfaces.

Abstract: The claimed subject matter provides a system and/or a method that facilitates generating and displaying a graphical item. An interface component can facilitate receipt of data related to the graphical item associated with an operating system. An enhancement component can leverage a browser to generate the graphical item with an opaque portion and at least one of a translucent portion and a transparent portion.

Abstract: A method includes defining a file attribute indicator based on an attribute associated with a source file and based on a mapping policy. The source file has a source filename and the source file is migrated to a target system from a source system. The target filename is based on the source filename and the file attribute indicator. The target filename is used by a target application of the target system to process the source file. The target application is the source application configured for use on the target system.

Abstract: The invention presents a system and method for reserving space within a browser for a requesting component. The invention can reserve space above, below, to the right, or to the left of a main browsing section for a requesting component. The invention can adjust the main browsing section in order to fit a plurality of spaces created for requesting components. The spaces reserved can be presented in a manner that does not obstruct any viewable areas of the main browsing section.

Abstract: A method leverages the file format information used by a target application to convert a source dataset into an encoding usable by the target application without converting the source dataset before migration and without modifying the target application. The source data when on the source system has random portions of various data types that are encoded in a source encoding based on data type. The target application, which typically processes data encoded in a target encoding that is based on data type, is able to process the source data despite the source encoding using file format information and a modified compiler library.

Abstract: A method of forming an electronic component includes forming first and second conductive materials over a substrate, with the second material having a higher oxidation rate than an oxidation rate of the first material when exposed to a thermal oxidizing atmosphere. The first and second conductive materials are first etched to form a conductive component. The conductive component has opposing outer lateral edges of the first and second conductive materials which span between the opposing outer lateral edges. Second etching is conducted into both of the second material outer lateral edges to recess them inside of the first material outer lateral edges. After the second etching, the substrate is exposed to the thermal oxidizing atmosphere effective to grow an oxide layer over both of the outer lateral edges of the first and second conductive materials. Electronic components are disclosed and claimed independent of any method of manufacture.

Abstract: In one implementation, first and second layers are formed over a substrate. One of the layers has a higher oxidation rate than the other when exposed to an oxidizing atmosphere. The layers respectively have an exposed outer edge spaced inside of the substrate periphery. Etching is conducted into the higher oxidation rate material at a faster rate than any etching which occurs into the lower oxidation rate material. Then, the substrate is exposed to the oxidizing atmosphere. In another implementation, a stack of at least two conductive layers for an electronic component is formed. The two conductive layers have different oxidation rates when exposed to an oxidizing atmosphere. The layer with the higher oxidation rate has an outer lateral edge which is recessed inwardly of a corresponding outer lateral edge of the layer with the lower oxidation rate. The stack is exposed to the oxidizing atmosphere effective to grow an oxide layer over the outer lateral edges of the first and second layers.

Abstract: In one implementation, first and second layers are formed over a substrate. One of the layers has a higher oxidation rate than the other when exposed to an oxidizing atmosphere. The layers respectively have an exposed outer edge spaced inside of the substrate periphery. Etching is conducted into the higher oxidation rate material at a faster rate than any etching which occurs into the lower oxidation rate material. Then, the substrate is exposed to the oxidizing atmosphere. In another implementation, a stack of at least two conductive layers for an electronic component is formed. The two conductive layers have different oxidation rates when exposed to an oxidizing atmosphere. The layer with the higher oxidation rate has an outer lateral edge which is recessed inwardly of a corresponding outer lateral edge of the layer with the lower oxidation rate. The stack is exposed to the oxidizing atmosphere effective to grow an oxide layer over the outer lateral edges of the first and second layers.

Abstract: In one implementation, first and second layers are formed over a substrate. One of the layers has a higher oxidation rate than the other when exposed to an oxidizing atmosphere. The layers respectively have an exposed outer edge spaced inside of the substrate periphery. Etching is conducted into the higher oxidation rate material at a faster rate than any etching which occurs into the lower oxidation rate material. Then, the substrate is exposed to the oxidizing atmosphere. In another implementation, a stack of at least two conductive layers for an electronic component is formed. The two conductive layers have different oxidation rates when exposed to an oxidizing atmosphere. The layer with the higher oxidation rate has an outer lateral edge which is recessed inwardly of a corresponding outer lateral edge of the layer with the lower oxidation rate. The stack is exposed to the oxidizing atmosphere effective to grow an oxide layer over the outer lateral edges of the first and second layers.

Abstract: In one implementation, first and second layers are formed over a substrate. One of the layers has a higher oxidation rate than the other when exposed to an oxidizing atmosphere. The layers respectively have an exposed outer edge spaced inside of the substrate periphery. Etching is conducted into the higher oxidation rate material at a faster rate than any etching which occurs into the lower oxidation rate material. Then, the substrate is exposed to the oxidizing atmosphere. In another implementation, a stack of at least two conductive layers for an electronic component is formed. The two conductive layers have different oxidation rates when exposed to an oxidizing atmosphere. The layer with the higher oxidation rate has an outer lateral edge which is recessed inwardly of a corresponding outer lateral edge of the layer with the lower oxidation rate. The stack is exposed to the oxidizing atmosphere effective to grow an oxide layer over the outer lateral edges of the first and second layers.

Abstract: A system for controlling emissions of hazardous, toxic or otherwise undesirable components in a waste gas stream, while maintaining uptime through decreased maintenance and repair, is provided. The system oxidizes the waste gas stream at high temperatures with a thermal oxidizer (110), effectively removes particulates in the waste gas stream as well as moderate levels of acid gas through a cyclone scrubber (120), and removes the remainder of the acid gas content in the waste gas stream through he use of a packed column (130). Finally, a condenser (140) lowers the moisture content of the waste gas stream before leaving the system by way of a blower (150), reducing the chance of condensation and corrosion in the facility ductwork. As a result, the system can run for sustained periods of time, reducing downtime in semiconductor operations and associated loss of revenue.