Abstract: There is disclosed a constant current source device comprising a diffused integrated circuit resistor in combination with a junction field effect transistor (FET). The FET is fabricated having an ion-implanted channel and diffused regions of the same conductivity type of material as the channel material, the diffused regions constitute the Source and Drain electrodes of the FET. The use of ion-implantation enables a tight tolerance to be maintained on the pinch-off voltage (V.sub.P) characteristics of the FET. By extending the source diffusion region the diffused resistor is produced integral with the FET and has a constant and known, but high temperature coefficient (TC). By taking advantage of the high TC of the resistor and the controlled V.sub.P of the FET, the combining structure provides a constant current having a substantially zero temperature coefficient over the temperature range from -50.degree. C to +125.degree. C.

Abstract: A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode connected to a point at which it is desired to provide an increased effective capacitance. The capacitor structure is suitable for being included in monolithic integrated circuits having diffused isolation regions. A first plate of the capacitor is formed by a metallization layer, the second plate of the capacitor may be formed by an emitter diffusion into the isolation diffusion. A base diffusion which is conductively connected to the emitter diffusion and to the isolation diffusion facilitates connection of the second plate of the capacitor to the substrate.

Abstract: A stabilizing circuit which increases the effective value of a capacitor and the structure of a monolithic capacitor are disclosed. The stabilizing circuit includes a transistor having a base electrode connected to the capacitor and an emitter electrode connected to a point at which it is desired to provide an increased effective capacitance. The capacitor structure is suitable for being included in monolithic integrated circuits having diffused isolation regions. A first plate of the capacitor is formed by a metallization layer, the second plate of the capacitor may be formed by an emitter diffusion into the isolation diffusion. A base diffusion which is conductively connected to the emitter diffusion and to the isolation diffusion facilitates connection of the second plate of the capacitor to the substrate.