Abstract: An interline transfer type area image sensor is described which can selectively operate in either an interlaced or non-interlaced read-out mode. The sensor includes a plurality of vertical CCD shift registers. Each shift register has an ion implanted shift transfer barrier or storage regions such that only one layer of gate electrode is required by each voltage clock, and a structure for selectively applying voltages to the clock lines for alternate rows of one or both of the vertical shift register electrodes.

Abstract: In interline transfer type are image sensor wherein photogenerated charge is transferred from a pixel into a charge coupled dvice (CCD) or shift register. The CCD structure is typically composed of two or more overlapping levels of polysilicon electrodes associated with each row of pixels. In accordance with invention, a CCD with simplified structure and hence improved manufacturability is described. The CCD utilizes ion implanted barrier regions, which may be self-aligned such as described by Losee et al. U.S. Pat. No. 4,613,402, to produce a device with single polysilicon electrode associated with each pixel.

Abstract: A process is disclosed of preparing a charge coupled device containing charge transfer direction biasing implants wherein the steps and materials for patterning electrodes and implants promote accurate edge alignments of implants and electrodes while minimizing strains and avoiding temperatures that permit unwanted lattice or intersticial ion migration in the semiconductive substrate.

Abstract: There is disclosed a process particularly suited for making CCD's.

Abstract: Hillock formation in a thin film of metal having a high coefficient of thermal expansion on a substrate having a low coefficient of thermal expansion is reduced by patterning the substrate in an area normally free from such pattern, specifically for the purpose of reducing hillocks, prior to formation of the thin metal film, with a bas-relief pattern of lands and valleys, having a depth dimension on the same order of magnitude as the thickness of the film.

Abstract: Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.

Abstract: Thickness control problems inherent in the chemical vapor deposition of polysilicon layers on silicon wafers are avoided by an improved vacuum deposition technique.