Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: Multiple images are captured where the exposure times for some of the images overlap and the images are spatially overlapped. Charge packets are transferred from one or more portions of pixels after particular integration periods, thereby enabling the portion or portions of pixels to begin another integration period while one or more other portions of pixels continue to integrate charge. Charge packets may be binned during readout of the images from the image sensor. Comparison of two or more images having different lengths of overlapping or non-overlapping exposure periods provides motion information. The multiple images can then be aligned to compensate for motion between the images and assembled into a combined image with an improved signal to noise ratio and reduced motion blur.

Abstract: An image sensor with an image area having a plurality of photodetectors of a first conductivity type includes a substrate of the second conductivity type; a first layer of the first conductivity type spanning the image area; a second layer of the second conductivity type; wherein the first layer is between the substrate and the second layer, and the plurality of photodetectors is disposed in the second layer and abut the first layer.

Abstract: A charge-coupled device (CCD) image sensor includes a layer of a semiconductor material having a first conductivity type. A horizontal CCD channel region of a second conductivity type is disposed in the layer of the semiconductor material. The horizontal CCD channel region includes multiple phases that are used to shift photo-generated charge through the horizontal CCD channel region. Distinct overflow drain regions are disposed in the layer of semiconducting material, with an overflow drain region electrically connected to only one particular phase of the horizontal CCD channel region. A buffer region of the second conductivity type can be used to electrically connect each overflow drain to the one particular phase of the horizontal CCD channel. Multiple barrier regions are disposed in the layer of semiconductor material, with each barrier region disposed between each overflow drain and the one particular phase electrically connected to the drain.

Abstract: A CCD image sensor comprises photosensitive elements arranged in rows and columns, vertical CCDs each having vertical shift elements associated with respective ones of the photosensitive elements of a corresponding one of the columns, and a horizontal CCD coupled to each of the vertical CCDs. The horizontal CCD comprises horizontal shift elements of two different types interspersed with one another. The horizontal shift elements of the first type are configured to receive shifted charge packets directly from respective ones of the vertical CCDs. The horizontal shift elements of the second type are configured not to receive shifted charge packets directly from any of the vertical CCDs. This configuration facilitates binning of same-color pixels for both sparse CFA patterns and Bayer CFA patterns.

Abstract: An image sensor generates an image signal with a differential response to image light. The image sensor has an array of photosites divided into standard photosites and non-standard photosites. A limiter provides the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a predetermined slower response to the same light exposure. The standard photosites and nonstandard photosites both sparsely sample the array in a predetermined pattern.

Abstract: A method for detecting and removing noise from an image, the method includes the steps of applying a frequency transform to the image for obtaining a magnitude image; applying a threshold value to values of the magnitude image for obtaining threshold values; setting one or more threshold values to a predetermined value; and reconstructing the image from the magnitude image having the predetermined values for removing noise from the image.

Abstract: An image sensor generates an image signal with a differential response to image light. The image sensor has an array of photosites divided into standard photosites and non-standard photosites. A limiter provides the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a predetermined slower response to the same light exposure. The standard photosites and nonstandard photosites both sparsely sample the array in a predetermined pattern.

Abstract: An image sensor generates an image signal with a differential response to image light. The image sensor has an array of photosites divided into standard photosites and non-standard photosites. A limiter provides the standard photosites with a predetermined standard response to a light exposure and the non-standard photosites with a predetermined slower response to the same light exposure. The standard photosites and nonstandard photosites both sparsely sample the array in a predetermined pattern.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.

Abstract: An image sensor includes a substrate; a plurality of pixels on the substrate, one or more of the pixels comprises (i) first and second charge-storage regions having at least one photosensitive area; (ii) a lateral overflow drain; (iii) a first lateral overflow gate adjacent the first charge-storage regions that passes substantially all charges from the first charge-storage region to the lateral overflow drain; and (iv) a second lateral gate adjacent the second charge-storage region that passes excess photo-generated charge into the lateral overflow drain for blooming control.

Abstract: A charge coupled device includes a substrate; a plurality of image pixels arranged in a two dimensional array in the substrate for capturing an electronic representation of an image and for transferring charge in a first direction; a transfer mechanism for transferring charge in a second direction from the plurality of the image pixels for further processing; an amplifier structure disposed in the substrate that receives the charge from the transfer mechanism and converts the charge into a voltage signal; a first opaque layer spanning over the amplifier for blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied; and a second opaque layer deposited into the substrate for also blocking near-infrared light inherently generated by an electrical field within the amplifier structure when a voltage is applied.

Abstract: An image sensor includes a substrate having photosensitive areas; an insulator spanning at least a portion of the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

Abstract: An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

Abstract: An image sensor includes a plurality of photosensitive sites which convert incident light into a charge for forming a bounded array of active imaging pixels; one or more substitutional pixels sites arranged in predetermined locations and interspersed amongst the boundary of the array of active imaging pixels; wherein the substitutional pixels are of a different design from the active imaging pixels which provides data, information or function different from the active pixels for improving performance, operation, manufacture, and/or assembly of the image sensor.

Abstract: An interline transfer type image sensing device that can be operated at high speed and with low image smear is described. The device incorporates a refractory metal layer which is used for both a light shield over the vertical charge transfer region and as a wiring layer for low resistance strapping of poly crystalline silicon (polysilicon) gate electrodes for the vertical charge transfer region. Plugs provided by a separate metallization layer connect the refractory light shield to the polysilicon gate electrode. These plugs allow high temperature processing after refractory light shield patterning for improved sensor performance without degradation of the polysilicon gate electrode or the refractory lightshield layer.