Abstract: An image capture system generates an extended effective dynamic range from a signal provided by an image sensor by utilizing an image sensing device having standard photosites with a predetermined response to a light exposure and non-standard photosites with a slower response to the same light exposure. An optical section exposes the image sensing device to image light, thereby causing the image sensing device to generate an image signal and a processing section expands the response of the standard photosites to increased light exposures by utilizing the image signals from neighboring non-standard photosites. Furthermore, the processing section may expand the response of the non-standard photosites to decreased light exposures by utilizing the image signals from neighboring standard photosites.

Abstract: An image sensor includes a substrate having photosensitive areas; an insulator spanning the substrate; and a first and second layer of a multi-layer metallization structure, wherein the first layer forms light shield regions over selected portions of the photosensitive area as well forming circuit interconnections and barrier regions to prevent spiking into the substrate or gates at contacts in the non-imaging area; and the second layer spanning the interconnections and barrier regions of the first layer only over the non-imaging areas and the second layer overlays edges of the first layer.

Abstract: A virtual phase CCD is fabricated in a semiconductor substrate of n-type conductivity having a layer of silicon dioxide on a surface by first forming a channel region by the implantation of boron ions. Masking regions of polycrystalline silicon are then formed on the silicon dioxide over and spaced along the channel region. Boron ions are then implanted into the substrate between the masking regions. The size of the masking regions are then increased by the addition of portions of a first photoresist layer to decrease the spacing along the channel region between the masking regions. Arsenic ions are then implanted into the channel region between the masking regions to form virtual gate regions along the surface of the channel reigon. Boron ions are then implanted into the substrate between the masking regions. The size of the masking regions is then further increased by the addition of a second photoresist layer to further decrease the spacing between the masking regions along the channel region.

Abstract: A method for fabricating a uniphase virtual electrode CCD uses only a single mask of different materials, portions of which are selectively removed, for a series of ion implantation steps. In this way, there is achieved the desired potential profile for the four sections of each cell without any need for aligning masks between successive implantation steps.