Abstract: A solidified melt extrudate comprising an active pharmaceutical ingredient in an amorphous form and a combination of at least two polymers.

Abstract: A system for monitoring at least one HVAC system includes at least one remotely accessible server, at least one probe or sensor operatively connected to the at least one HVAC system and configured to acquire operational data, and a communication module operatively connected to the at least one probe or sensor and configured to transmit the operational data acquired to the at least one remotely accessible server. The remotely accessibly server includes a processor and a memory unit and is programmed to receive and store operational data acquired for the HVAC system, and identify any operational abnormalities by analysing the operational data. Responsive to an operational abnormality being identified, the server is further programmed to designate a tiered maintenance status for the HVAC system and transmit a corresponding tiered maintenance request to a technician based on the tiered maintenance status designated.

Abstract: A system for monitoring at least one HVAC system includes at least one remotely accessible server, at least one probe or sensor operatively connected to the at least one HVAC system and configured to acquire operational data, and a communication module operatively connected to the at least one probe or sensor and configured to transmit the operational data acquired to the at least one remotely accessible server. The remotely accessibly server includes a processor and a memory unit and is programmed to receive and store operational data acquired for the HVAC system, and identify any operational abnormalities by analysing the operational data. Responsive to an operational abnormality being identified, the server is further programmed to designate a tiered maintenance status for the HVAC system and transmit a corresponding tiered maintenance request to a technician based on the tiered maintenance status designated.

Abstract: A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

Abstract: A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

Abstract: A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

Abstract: A semiconductor structure is disclosed. The semiconductor structure includes a trench having substantially parallel trench sidewalls, and a tapered dielectric liner in the trench. The tapered dielectric liner includes slanted dielectric sidewalls. A conductive filler is enclosed by the slanted dielectric sidewalls in the trench.

Abstract: According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

Abstract: A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

Abstract: One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.

Abstract: This relates to a heating device including a solar energy collector, the solar energy collector transferring collected solar energy to outside air. First collector panels are used to heat outside air which heated air is led to a heater, for example a space heater. Second collector panels are used to transfer solar energy to air led to a heat exchanger of a heat pump. The heat pump transfers the extracted heat to heat storage. The stored heat is added to the air coming from the first collector panels if the temperature of the air coming from the first collector panels is below a predetermined temperature.

Abstract: A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.

Abstract: One exemplary disclosed embodiment comprises a semiconductor package including a vertical conduction control transistor and a vertical conduction sync transistor. The vertical conduction control transistor may include a control source, a control gate, and a control drain that are all accessible from a bottom surface, thereby enabling electrical and direct surface mounting to a support surface. The vertical conduction sync transistor may include a sync drain on a top surface, which may be connected to a conductive clip that is coupled to the support surface. The conductive clip may also be thermally coupled to the control transistor. Accordingly, all terminals of the transistors are readily accessible through the support surface, and a power circuit, such as a buck converter power phase, may be implemented through traces of the support surface. Optionally, a driver IC may be integrated into the package, and a heatsink may be attached to the conductive clip.

Abstract: According to one embodiment, a semiconductor wafer comprises a plurality of solder bumps for providing device contacts formed over a functional region of the semiconductor wafer, and one or more support rings surrounding the functional region. The one or more support rings and the plurality of solder bumps are formed so as to have substantially matching heights. The presence of the one or more support rings causes the semiconductor wafer to have a substantially uniform thickness in the functional region after a thinning process is performed on the semiconductor wafer. A method for fabricating the semiconductor wafer comprises forming the plurality of solder bumps over the functional region, and forming the one or more support rings surrounding the functional region before performing the thinning process on the semiconductor wafer.

Abstract: Some exemplary embodiments of a semiconductor package including a semiconductor device having electrodes on opposite major surfaces connectable to a planar support surface without a bondwire and a control electrode disposed in a corner position for reducing top-metal spreading resistance and device on-resistance have been disclosed. One exemplary structure comprises a semiconductor device having a first major surface including a first electrode and a second major surface including a second electrode and a control electrode, wherein the control electrode is disposed in a corner of the second major surface, and wherein the first electrode, the second electrode, and the control electrode are electrically connectable to a planar support surface without a bondwire. The pads of the device may be arranged in a balanced grid to maintain device stability during integration. A minimum gap distance between die pads allows the placement of vias in the planar support surface.

Abstract: A power semiconductor package that includes a power semiconductor device having a threshold voltage that does not vary when subjected to an autoclave test.

Abstract: This relates to a heating device including a solar energy collector, the solar energy collector transferring collected solar energy to outside air. First collector panels are used to heat outside air which heated air is led to a heater, for example a space heater. Second collector panels are used to transfer solar energy to air led to a heat exchanger of a heat pump. The heat pump transfers the extracted heat to heat storage. The stored heat is added to the air coming from the first collector panels if the temperature of the air coming from the first collector panels is below a predetermined temperature.

Abstract: A process for fabrication of a semiconductor device that includes forming a first trench in a semiconductor body, forming spaced spacers in the first trench, and forming a narrower second trench at the bottom of the first trench using the spacers as a mask.

Abstract: A one-piece pallet for securing and stacking drums thereon may include a tray having downwardly and inwardly tapering peripheral side walls, a top surface having a plurality of raised support surfaces, each shaped to engage a bottom of a container, a plurality of raised dividers, each of said dividers being positioned between adjacent support surfaces and being shaped to engage a side wall of a drum resting on said adjacent support surfaces. The side walls may have outer raised ribs terminating adjacent one of the support surfaces and shaped to engage a side wall of a drum resting on said adjacent one of said support surfaces. The dividers may include inner raised ribs having terminal portions opposite the terminal portions of the outer raised ribs such that a drum resting on any one of said support surfaces is constrained by the terminal portions of the inner and outer raised ribs from lateral movement relative to the tray.