Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1?yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly selective etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1?yGey, and strained Si1?yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1?yGeyC or a heavily doped layer to make electrical contacts for the SiGe/Si heterojunction diodes.

Abstract: A method for forming strained Si or SiGe on relaxed SiGe on insulator (SGOI) or a SiGe on Si heterostructure is described incorporating growing epitaxial Si1-yGey layers on a semiconductor substrate, smoothing surfaces by Chemo-Mechanical Polishing, bonding two substrates together via thermal treatments and transferring the SiGe layer from one substrate to the other via highly seletive etching using SiGe itself as the etch-stop. The transferred SiGe layer may have its upper surface smoothed by CMP for epitaxial deposition of relaxed Si1-yGey, and strained Si1-yGey depending upon composition, strained Si, strained SiC, strained Ge, strained GeC, and strained Si1-yGeyC or a heavily doped layer to make electrical contacts of the SiGe/Si heterojunction diodes.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A method of fabricating a scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. The invention also relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A method and system for forming a thermoelement for a thermoelectric cooler is provided. In one embodiment a substrate having a plurality of pointed tips covered by a metallic layer is formed. Portions of the metallic layer are covered by an insulator and other portions of the metallic layer are exposed. Next, a patterned layer of thermoelectric material is formed by depositions extending from the exposed portions of the metallic layer in the presence of a deposition mask. Finally, a metallic layer is formed to selectively contact the patterned layer of thermoelectric material.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A scanning heat flow probe for making quantitative measurements of heat flow through a device under test is provided. In one embodiment the scanning heat flow probe includes an electric current conductor in a cantilever beam connected to a probe tip and coupled to two voltmeter leads. The probe also includes two thermocouple junctions in the cantilever beam electrically isolated from the electric current conductor and the two voltmeter leads. Heat flow is derived quantitatively using only voltage and current measurements. In other forms, the invention relates to the calibration of scanning heat flow probes through a method involving interconnected probes, and relates to the minimization of heat flow measurement uncertainty by probe structure design practices.

Abstract: A method and system for forming a thermoelement for a thermoelectric cooler is provided. In one embodiment a substrate having a plurality of pointed tips covered by a metallic layer is formed. Portions of the metallic layer are covered by an insulator and other portions of the metallic layer are exposed. Next, a patterned layer of thermoelectric material is formed by depositions extending from the exposed portions of the metallic layer in the presence of a deposition mask. Finally, a metallic layer is formed to selectively contact the patterned layer of thermoelectric material.