Patents by Inventor David R. Medeiros
David R. Medeiros has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8652762Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.Type: GrantFiled: March 19, 2012Date of Patent: February 18, 2014Assignee: International Business Machines CorporationInventors: Dario L. Goldfarb, Libor Vyklicky, Sean D. Burns, David R. Medeiros, Daniel P. Sanders, Robert D. Allen
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Patent number: 8574953Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: January 31, 2012Date of Patent: November 5, 2013Assignee: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 8323871Abstract: An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.Type: GrantFiled: February 24, 2010Date of Patent: December 4, 2012Assignee: International Business Machines CorporationInventors: Sean D. Burns, David R. Medeiros, Dirk Pfeiffer
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Publication number: 20120205787Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.Type: ApplicationFiled: March 19, 2012Publication date: August 16, 2012Applicant: International Business Machines CorporationInventors: Dario L. Goldfarb, Libor Vyklick, Sean D. Burns, David R. Medeiros, Daniel P. Sanders, Robert D. Allen
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Publication number: 20120126216Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: ApplicationFiled: January 31, 2012Publication date: May 24, 2012Applicant: International Business Machines CorporationInventors: Patrick W. DeHaven, David R. Medeiros, David B. Mitzi
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Patent number: 8137874Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.Type: GrantFiled: January 23, 2008Date of Patent: March 20, 2012Assignee: International Business Machines CorporationInventors: Dario L. Goldfarb, Libor Vyklicky, Sean D. Burns, David R. Medeiros, Daniel P. Sanders, Robert D. Allen
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Patent number: 8123997Abstract: The present invention provides a process for preparing a melt-processed organic-inorganic hybrid material including the steps of maintaining a solid organic-inorganic hybrid material at a temperature above the melting point but below the decomposition temperature of the organic-inorganic hybrid material for a period of time sufficient to form a uniform melt and thereafter, cooling the uniform melt to an ambient temperature under conditions sufficient to produce the melt-processed organic-inorganic hybrid material.Type: GrantFiled: July 3, 2008Date of Patent: February 28, 2012Assignee: International Business Machines CorporationInventors: Patrick W DeHaven, David R Medeiros, David B Mitzi
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Patent number: 8084193Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.Type: GrantFiled: July 12, 2008Date of Patent: December 27, 2011Assignee: International Business Machines CorporationInventors: Joy Cheng, Dario L Goldfarb, David R Medeiros, Daniel P Sanders, Dirk Pfeifer, Libor Vylicky
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Publication number: 20110300483Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate.Type: ApplicationFiled: July 25, 2011Publication date: December 8, 2011Applicant: International Business Machines CorporationInventors: Joy Cheng, Dario L. Goldfarb, David R. Medeiros, Daniel P. Sanders, Dirk Pfeiffer, Libor Vyklicky
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Publication number: 20110294068Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer. Pattern-wise exposing the coated substrate to imaging radiation and contacting the coated substrate with a developer, produces the patterned material layer. Any optional top coat material and a portion of the photoresist layer can be simultaneously removed from the coated substrate to form a patterned photoresist layer on the substrate.Type: ApplicationFiled: July 25, 2011Publication date: December 1, 2011Applicant: International Business Machines CorporationInventors: Joy Cheng, Dario L. Goldfarb, David R. Medeiros, Dirk Pfeiffer, Daniel P. Sanders, Libor Vyklicky
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Publication number: 20110207047Abstract: An antireflective hardmask composition layer including a polymer having Si—O and non-silicon inorganic units in its backbone. The polymer includes chromophore and transparent moieties and a crosslinking component. The antireflective hardmask composition layer is employed in a method of forming a patterned material on a substrate.Type: ApplicationFiled: February 24, 2010Publication date: August 25, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Sean D. Burns, David R. Medeiros, Dirk Pfeiffer
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Patent number: 7960095Abstract: Resist compositions having good footing properties even on difficult substrates are obtained by using a combination of base additives including a room temperature solid base, and a liquid low vapor pressure base. The compositions are especially useful on metal substrates such as chromium-containing layers commonly used in mask-making.Type: GrantFiled: February 11, 2004Date of Patent: June 14, 2011Assignee: International Business Machines CorporationInventors: Wayne M. Moreau, Marie Angelopoulos, Wu-Song Huang, David R. Medeiros, Karen E. Petrillo
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Patent number: 7875408Abstract: Compositions comprising photobleachable organic materials can be bleached by 193 nm light, and brought back to their original state by stimuli after exposure. (reversible photobleaching). We use these compositions in art-known contrast enhancement layers and as a part of a photoresist, especially in optical lithography processes for semiconductor fabrication. They may comprise polymers such as organo-silicon polymers, polymers comprising polymers of aromatic hydroxyl compounds such as phenol and naphthol such as phenol formaldehyde polymers and naphthol formaldehyde polymers styrene polymers and phenolic acrylate polymers or cyclic materials comprising: where the radicals “R” and “Y” represent organo, or substituted organo moieties, Structures I, II, and III represent basic organic skeletons and can be unsubstituted or substituted in any available position with any one or combinations of multiple substituents.Type: GrantFiled: January 25, 2007Date of Patent: January 25, 2011Assignee: International Business Machines CorporationInventors: John A. Hoffnagle, David R. Medeiros, Robert D. Miller, Libor Vycklicky, Gregory M. Wallraff
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Patent number: 7847357Abstract: The present invention relates to complementary metal-oxide-semiconductor (CMOS) devices having gapped dual stressors with dielectric gap fillers. Specifically, each CMOS device of the present invention includes at least one n-channel field effect transistor (n-FET) and at least one p-channel field effect transistor (p-FET). A tensilely stressed dielectric layer overlays the n-FET, and a compressively stressed dielectric layer overlays the p-FET. A gap is located between the tensilely and compressively stressed dielectric layers and is filled with a dielectric filler material. In one specific embodiment of the present invention, both the tensilely and compressively stressed dielectric layers are covered by a layer of the dielectric filler material, which is essentially free of stress. In an alternatively embodiment of the present invention, the dielectric filler material is only present in the gap between the tensilely and compressively stressed dielectric layers.Type: GrantFiled: September 9, 2009Date of Patent: December 7, 2010Assignee: International Business Machines CorporationInventors: Bruce B. Doris, Thomas W. Dyer, David R. Medeiros, Anna W. Topol
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Patent number: 7816069Abstract: An antireflective coating that contains at least two polymer components and comprises chromophore moieties and transparent moieties is provided. The antireflective coating is useful for providing a single-layer composite graded antireflective coating formed beneath a photoresist layer.Type: GrantFiled: June 23, 2006Date of Patent: October 19, 2010Assignee: International Business Machines CorporationInventors: Colin J. Brodsky, Sean D. Burns, Dario L. Goldfarb, Michael Lercel, David R. Medeiros, Dirk Pfeiffer, Daniel P. Sanders, Steven A. Scheer, Libor Vyklicky
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Patent number: 7790593Abstract: A method that allows for uniform, simultaneous epitaxial growth of a semiconductor material on dissimilarly doped semiconductor surfaces (n-type and p-type) that does not impart substrate thinning via a novel surface preparation scheme, as well as a structure that results from the implementation of this scheme into the process integration flow for integrated circuitry are provided. The method of the present invention can by used for the selective or nonselective epitaxial growth of semiconductor material from the dissimilar surfaces.Type: GrantFiled: December 21, 2007Date of Patent: September 7, 2010Assignee: International Business Machines CorporationInventors: Katherina E. Babich, Bruce B. Doris, David R. Medeiros, Devendra K. Sadana
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Patent number: 7736833Abstract: Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.Type: GrantFiled: October 2, 2007Date of Patent: June 15, 2010Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons
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Patent number: 7709177Abstract: Multilayered resist structures including bilayer and top surface imaging which utilize tuned underlayers functioning as ARCs, planarizing layers, and etch resistant hard masks whose properties such as optical, chemical and physical properties are tailored to give a multilayer resist structure exhibiting high resolution, residue free lithography and methods of preparing these materials.Type: GrantFiled: October 2, 2007Date of Patent: May 4, 2010Assignee: International Business Machines CorporationInventors: Marie Angelopoulos, Katherina E. Babich, Douglas Charles LaTulipe, Qinghuang Lin, David R. Medeiros, Wayne Martin Moreau, Karen E. Petrillo, John P. Simons
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Patent number: 7648820Abstract: Antireflective hardmask compositions and techniques for the use of antireflective hardmask compositions for processing of semiconductor devices are provided. In one aspect of the invention, an antireflective hardmask layer for lithography is provided. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component. In another aspect of the invention, a method for processing a semiconductor device is provided. The method comprises the steps of: providing a material layer on a substrate; forming an antireflective hardmask layer over the material layer. The antireflective hardmask layer comprises a carbosilane polymer backbone comprising at least one chromophore moiety and at least one transparent moiety; and a crosslinking component.Type: GrantFiled: December 21, 2006Date of Patent: January 19, 2010Assignee: International Business Machines CorporationInventors: Katherina Babich, Elbert Huang, Arpan P. Mahorowala, David R. Medeiros, Dirk Pfeiffer, Karen Temple
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Publication number: 20100009132Abstract: A coating process comprises forming a patterned material layer on a substrate using a self-segregating polymeric composition comprising a polymeric photoresistive material and an antireflective coating material. The polymeric photoresistive material and the antireflective coating material that make up the self segregating composition are contained in a single solution. When depositing this solution on a substrate and removing the solvent, the two materials self-segregate into two layers. The substrate can comprise one of a ceramic, dielectric, metal, or semiconductor material and in some instances a material such as a BARC material that is not from the self segregating composition. The composition may also contain a radiation-sensitive acid generator and a base quencher. This produces a coated substrate having a uniaxial bilayer coating oriented in a direction orthogonal to the substrate with a top photoresistive coating layer and a bottom antireflective coating layer.Type: ApplicationFiled: July 12, 2008Publication date: January 14, 2010Applicant: International Business Machines CorporationInventors: Joy Cheng, Dario L. Goldfarb, David R. Medeiros, Daniel P. Sanders, Dirk Pfeifer, Libor Vylicky