Abstract: The invention relates to an optoelectronic component, comprising: at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation during operation; at least one connecting element, which is electrically conductive, flexible and extensible; and a shaped body, which surrounds the at least two optoelectronic semiconductor chips and the at least one connecting element at least in some locations, wherein the optoelectronic semiconductor chips are each arranged on a carrier. The invention further relates to a method for producing an optoelectronic component.

Abstract: In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: The invention relates to ICAN-derivative compounds having the general formula (I), wherein Q is selected from the group consisting of —NC, —NO2, —NO, —NHOH, —NCS and —NR1R2, for use as antifungal agents and gal preparations and pharmaceutical preparations for use in the treatment of a subject in need of antifungal medication.

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: The invention relates to an optoelectronic component, comprising: at least two optoelectronic semiconductor chips, which are designed to emit electromagnetic radiation during operation; at least one connecting element, which is electrically conductive, flexible and extensible; and a shaped body, which surrounds the at least two optoelectronic semiconductor chips and the at least one connecting element at least in some locations, wherein the optoelectronic semiconductor chips are each arranged on a carrier. The invention further relates to a method for producing an optoelectronic component.

Abstract: In an embodiment an optoelectronic device includes an optoelectronic component with a first main surface, a second main surface and a plurality of side surfaces interconnecting the first and second main surfaces and a conversion element arranged at the first main surface of the optoelectronic component, wherein the conversion element includes a frame of a reflective material and a conversion material located within the frame, wherein an interface between the frame and the conversion material runs slanted having an angle of smaller than 180° and larger than 90° between the interface and an adjacent side surface of the plurality of side surfaces, and wherein the frame protrudes laterally beyond a light emitting area of the first main surface of the optoelectronic component.

Abstract: In an embodiment a radiation-emitting component includes a first semiconductor chip configured to generate first primary electromagnetic radiation, a second semiconductor chip configured to generate second primary electromagnetic radiation, a first conversion element configured to partially convert the first and/or the second primary electromagnetic radiation into a first secondary radiation, wherein the first semiconductor chip is a first semiconductor laser diode, wherein the first primary electromagnetic radiation is blue primary radiation and wherein the first secondary radiation is green secondary radiation and a first optical element arranged between radiation emitting surfaces of the first semiconductor chip and the second semiconductor chip, wherein the first optical element is reflective for the first primary radiation and the second primary radiation.

Abstract: An optoelectronic component includes a carrier, wherein the carrier includes a surface, reflective barriers are formed over the surface of the carrier, the reflective barriers divide the surface of the carrier into pixels, each pixel respectively includes at least one optoelectronic semiconductor chip arranged on the surface of the carrier, the optoelectronic semiconductor chip is configured to emit electromagnetic radiation, the optoelectronic semiconductor chip includes an upper side, the upper side faces away from the surface of the carrier, and a reflective covering is arranged on the upper side of the optoelectronic semiconductor chip.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite the radiation side having at least two electrically conductive contact elements, and a semiconductor layer sequence having an active layer that emits or absorbs the electromagnetic radiation, wherein the at least two electrically conductive contact elements have different polarities, are spaced apart from each other and are completely or partially exposed at the contact side in an unmounted state of the optoelectronic component, a region of the contact side is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in a plan view of the contact side, the cooling element partially covers one or both of the at least two electrically conductive contact elements.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: An optoelectronic semiconductor chip may include an active region configured to emit electromagnetic radiation during operation of said optoelectronic semiconductor chip. The optoelectronic semiconductor chip comprises conversion elements arranged to convert the wavelength of the electromagnetic radiation emitted by the active region during operation, and at least one barrier at least partially impermeable to the electromagnetic radiation emitted by the active region. The barrier is disposed in a lateral direction between the conversion elements, the lateral direction being parallel to the main extension plane of the semiconductor body, and the barrier extending transversely to the lateral direction. The active region has at least two emission regions which can be driven separately from each other, and each of the conversion elements is disposed in a radiation direction of the electromagnetic radiation emitted from one of the emission regions.

Abstract: An optoelectronic component includes a carrier, wherein the carrier includes a surface, reflective barriers are formed over the surface of the carrier, the reflective barriers divide the surface of the carrier into pixels, each pixel respectively includes at least one optoelectronic semiconductor chip arranged on the surface of the carrier, the optoelectronic semiconductor chip is configured to emit electromagnetic radiation, the optoelectronic semiconductor chip includes an upper side, the upper side faces away from the surface of the carrier, and a reflective covering is arranged on the upper side of the optoelectronic semiconductor chip.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A semiconductor component and an illumination device is disclosed. In an embodiment the semiconductor component includes a semiconductor chip configured to generate a primary radiation having a first peak wavelength and a radiation conversion element arranged on the semiconductor chip. The radiation conversion element includes a quantum structure that converts the primary radiation at least partly into secondary radiation having a second peak wavelength and a substrate that is transmissive to the primary radiation.

Abstract: A lighting device and a method for producing a lighting device are disclosed. In an embodiment, the lighting device includes a carrier, at least one optoelectronic illuminant arranged on the carrier, the illuminant configured to emit light into an emission area and a color scattering layer located in the emission area, the color scattering layer configured to generate a color by scattering of light at a surface of the color scattering layer facing away from the illuminant.

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method includes providing at least one light-emitting semiconductor chip comprising a sapphire substrate and an epitaxially grown layer sequence, arranging the light-emitting semiconductor chip with a side facing away from the sapphire substrate on a carrier, detaching the sapphire substrate from the semiconductor chip, applying a converter element on a region of the semiconductor chip in which the sapphire substrate was detached, arranging the semiconductor chip on an auxiliary carrier so that the converter element faces the auxiliary carrier and detaching the carrier from the semiconductor chip.

Abstract: A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.