Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Abstract: An optoelectronic component includes a radiation side, a contact side opposite a radiation side with at least two electrically conductive contact elements for external electrical contacting of the component, and a semiconductor layer sequence arranged between the radiation side and the contact side with an active layer that emits or absorbs electromagnetic radiation during normal operation, wherein the contact elements are spaced apart from each other at the contact side and are completely or partially exposed at the contact side in the unmounted state of the component, the region of the contact side between the contact elements is partially or completely covered with an electrically insulating, contiguously formed cooling element, the cooling element is in direct contact with the contact side and has a thermal conductivity of at least 30 W/(m·K), and in plan view of the contact side the cooling element covers one or both contact elements partially.

Abstract: An optoelectronic component includes a first lead frame section and a second lead frame section spaced apart from one another, and having an optoelectronic semiconductor chip arranged on the first lead frame section and the second lead frame section, wherein the first lead frame section and the second lead frame section respectively have an upper side, a lower side and a first side flank extending between the upper side and the lower side, a first lateral solder contact surface of the optoelectronic component is formed on the first side flank of the first lead frame section, and the first lateral solder contact surface is formed by a recess arranged on the first side flank of the first lead frame section and extends from the upper side to the lower side of the first lead frame section.

Abstract: A system for predicting variability of travel time for a trip at a particular time may utilize a machine learning model including latent variables that are associated with the trip. The machine learning model may be trained from historical trip data that is based on location-based measurements reported from mobile devices. Once trained, the machine learning model may be utilized for predicting variability of travel time. A process may include receiving an origin, a destination, and a start time associated with a trip, obtaining candidate routes that run from the origin to the destination, and predicting, based at least in part on the machine learning model, a probability distribution of travel time for individual ones of the candidate routes. One or more routes may be recommended based on the predicted probability distribution, and a measure of travel time for the recommended route(s) may be provided.

Abstract: A semiconductor component has a semiconductor chip that generates an electromagnetic primary radiation having a first peak wavelength, having a first conversion element, which has a quantum structure, wherein the quantum structure is formed to partially shift the primary radiation to a secondary radiation having a second peak wavelength, wherein a second conversion element is provided which has a luminescent material, wherein the luminescent material is formed to shift an electromagnetic radiation to a tertiary radiation having a dominant wavelength, wherein the first conversion element is formed to generate secondary radiation, which has a lower peak wavelength than the dominant wavelength of the tertiary radiation.

Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

Abstract: An optoelectronic component includes a carrier, a light source formed on the carrier, the light source having at least one luminous face formed by one or more light emitting diodes, wherein an at least partly transparent lamina is arranged on the luminous face, the lamina having a surface facing the luminous face and a surface facing away from the luminous face, wherein at least one conversion layer and a color scattering layer for generating a color by light scattering are arranged on at least one of the facing and facing-away surfaces, wherein the conversion layer is arranged upstream of the color scattering layer relative to an emission direction of light from the luminous face, such that light emitted by the luminous face can first be converted and then be scattered.

Abstract: Optoelectronic semiconductor component includes at least four different light sources each including at least one optoelectronic semiconductor chip, which during operation emit radiation having mutually different color loci in the CIE standard chromaticity diagram, wherein the semiconductor component is designed to emit white or colored light having a variable correlated color temperature during operation.

Abstract: An optoelectronic component includes a carrier, and a light source arranged on a surface of the carrier, said light source including at least one luminous surface formed by at least one light-emitting diode, wherein a transparent converter-free spacer is arranged on the luminous surface such that a distance is formed between the luminous surface and a spacer surface of the spacer facing away from the luminous surface, and wherein the light source is potted by a potting compound such that the spacer surface is formed extending flush with a potting compound surface facing away from the surface of the carrier and a surface formed by a spacer surface and the potting compound surface is plane.

Abstract: A method for mirror-coating lateral surfaces of optical components, a mirror-coated optical component and an optoelectronic semiconductor body mountable on surface are disclosed. In an embodiment, an optoelectronic semiconductor body includes a semiconductor chip having a radiation side and a contact side different from the radiation side, wherein contact elements for electrically contacting the semiconductor body are attached to the contact side, and wherein the contact elements are freely accessible. The body further includes a metal mirror layer disposed on the semiconductor chip, wherein the metal mirror layer has a reflectivity of at least 80% to radiation emitted by the semiconductor chip during operation, wherein the mirror layer is a continuous and contiguous mirror layer, which covers all sides of the semiconductor chip that are not the contact side and the radiation side by at least 95%, and wherein the mirror layer is arranged at the semiconductor chip in a form-fit manner.

Abstract: The invention relates to a method for producing a plurality of conversion elements (6) comprising the following steps: providing a substrate (1); applying a first mask layer (4) to the substrate (1), the first mask layer (4) being structured with through-holes (3) which completely penetrate the first mask layer (4); applying a conversion material (5) at least into the through-holes (3); and singulating the conversion elements (6) so as to produce a plurality of individual conversion elements (6). The invention also relates to two other methods, to a conversion element (6), and to an optoelectronic component.

Abstract: An optoelectronic semiconductor device includes a carrier having a carrier top side, at least one optoelectronic semiconductor chip arranged at the carrier top side and having a radiation main side remote from the carrier top side, at least one bonding wire, at least one covering body on the radiation main side, and at least one reflective potting compound surrounding the semiconductor chip in a lateral direction and extending from the carrier top side at least as far as the radiation main side, wherein the bonding wire is completely covered by the reflective potting compound or completely covered by the reflective potting compound and the covering body, the bonding wire is fixed to the semiconductor chip in an electrical connection region on the radiation main side, and the electrical connection region is free of the covering body and covered partly or completely by the reflective potting compound.

Abstract: An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body.

Abstract: An optoelectronic component includes a first lead frame section and a second lead frame section spaced apart from one another, and having an optoelectronic semiconductor chip arranged on the first lead frame section and the second lead frame section, wherein the first lead frame section and the second lead frame section respectively have an upper side, a lower side and a first side flank extending between the upper side and the lower side, a first lateral solder contact surface of the optoelectronic component is formed on the first side flank of the first lead frame section, and the first lateral solder contact surface is formed by a recess arranged on the first side flank of the first lead frame section and extends from the upper side to the lower side of the first lead frame section.

Abstract: A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

Abstract: An optoelectronic device includes a printed circuit board, and a light source arranged on a surface of the printed circuit board, said light source comprising at least one luminous face formed by at least one light-emitting diode wherein the light-emitting diode is electrically connected to the printed circuit board, wherein the light-emitting diode is at least partly enclosed by molding by a potting compound.

Abstract: Optoelectronic semiconductor component includes at least four different light sources each including at least one optoelectronic semiconductor chip, which during operation emit radiation having mutually different colour loci in the CIE standard chromaticity diagram, wherein the semiconductor component is designed to emit white or coloured light having a variable correlated colour temperature during operation.

Abstract: A system and method for detecting and preventing PSTN fraud and abuse in real time includes a detection engine and a call management engine. The system includes at least one user record, at least one call data record, at least one fraud score record, and at least one remediation record. A call management engine enables users to establish VoIP calls connections to destination phone numbers. A fraud detection engine screens VoIP call connections to detect potential fraud and generates fraud records and remediation records when potential fraud is detected. The fraud detection engine may additionally direct the call management to terminate a VoIP call connection.