Abstract: The disclosure relates to an apparatus and method for liquid cooling of an electronic component. A housing includes an insertion slot and defines at least one component chamber for carrying the electronic component. A fluid inlet and fluid outlet are provided on the housing. A liquid coolant circuit passes through the housing at least from the inlet to the outlet.

Abstract: The disclosure relates to an apparatus for connecting an electronic component to a conductor. A housing includes at least one slot and defines at least one component chamber for carrying the electronic component. A liquid coolant can pass through the housing. A pair of conductive members extends from the housing through the at least one slot and can be releasably inserted into a channel defined in a support assembly. The support assembly facilitates an electrical connection between the conductive members and corresponding conductive contact members connected to a respective power supply or electrical load. The support assembly can provide an inward sealing force to a seal on the housing circumscribing the pair of conductive members.

Abstract: A sensing element having improved temperature and pressure characteristics including at least one acoustic sensing device formed mainly from a silicon substrate and having a microelectromechanical system without the use of quartz or polymer, wherein the at least one acoustic sensing device detects a torque associated with a metal object subject to said torque, and a high temperature bonding surface for directly connecting the sensing element to the metal object via a high temperature connecting processes comprising at least one of soldering, metalizing and/or brazing, without the need for a polymer adhesive. Related sensors using such sensing elements and methods are also disclosed herein.

Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.

Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.

Abstract: The disclosure relates to an apparatus and method for liquid cooling of an electronic component. A housing includes an insertion slot and defines at least one component chamber for carrying the electronic component. A fluid inlet and fluid outlet are provided on the housing. A liquid coolant circuit passes through the housing at least from the inlet to the outlet.

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: A power overlay (POL) module includes a semiconductor device having a first side and an opposing second side, a dielectric sheet having a first side coupled to the semiconductor device second side, and an opposing second side, the dielectric sheet defining an aperture therethrough. The POL module also includes a first conductive layer disposed on the second side of the dielectric sheet and electrically coupled through the aperture to the semiconductor device second surface, a first conductive plate having a first side, and an opposing second side coupled to the first surface of the semiconductor device. The POL module further includes a first heat sink coupled the first side of the conductive plate and a first thermal interface layer disposed between the first conductive plate and the first heat sink.

Abstract: A semiconductor device is provided. The semiconductor device includes an electric field (E-field) suppression layer formed over a termination region. The E-field suppression layer is patterned with openings over metal contact areas. The E-field suppression layer has a thickness such that an electric field strength above the E-field suppression layer is below a dielectric strength of an adjacent material when the semiconductor device is operating at or below a maximum voltage.

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 ?m and less than or equal to 500 ?m; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.

Abstract: A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A remetalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the remetalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

Abstract: A power overlay (POL) module includes a semiconductor device having a first side and an opposing second side, a dielectric sheet having a first side coupled to the semiconductor device second side, and an opposing second side, the dielectric sheet defining an aperture therethrough. The POL module also includes a first conductive layer disposed on the second side of the dielectric sheet and electrically coupled through the aperture to the semiconductor device second surface, a first conductive plate having a first side, and an opposing second side coupled to the first surface of the semiconductor device. The POL module further includes a first heat sink coupled the first side of the conductive plate and a first thermal interface layer disposed between the first conductive plate and the first heat sink.

Abstract: An electrical component and method for manufacturing the electrical component with a substrate a conductor stack having multiple layers and including at least one electrically conductive path. The conductor stack mounted to the substrate with a dielectric passivation stack encasing at least a portion of the conductor stack.

Abstract: A device comprises: a high temperature semiconductor device comprising a first surface, wherein the high temperature semiconductor device comprises an active area and a termination area disposed adjacent to the active area; an inorganic dielectric insulating layer disposed on the first surface, wherein the inorganic dielectric insulating layer fills a volume extending over an entirety of the termination area and comprises a thickness greater than or equal to 25 ?m and less than or equal to 500 ?m; and an electrical connector connecting the active area of the high temperature semiconductor device to an additional component of the device.

Abstract: A system includes a sensor comprising a sensor bonding layer disposed on a surface of the sensor, wherein the sensor bonding layer is a metallic alloy. An inlay includes a planar outer surface, wherein the inlay may be disposed on a curved surface of a structure. A structure bonding layer may be disposed on the planar outer surface of the inlay, wherein the structure bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer. The inlay comprises at least one of a modulus of elasticity, a shape, a thickness, and a size configured to reduce strain transmitted to the sensor.

Abstract: A system includes a structure bonding layer and a sensor. The structure bonding layer is disposed on a structure. The structure bonding layer is a metallic alloy. The sensor includes a non-metallic wafer and a sensor bonding layer disposed on a surface of the non-metallic wafer. The sensor bonding layer is a metallic alloy. The sensor bonding layer is coupled to the structure bonding layer via a metallic joint, and the sensor is configured to sense data of the structure through the metallic joint, the structure bonding layer, and the sensor bonding layer.

Abstract: A sensor assembly includes a die substrate and a metalized layer formed on the die substrate. The metalized layer is formed of a first metal material and includes a bonding pad to facilitate electrically coupling the sensor assembly to a sensor system. A re-metalized bump is formed on the bonding pad of a second metal material and is electrically coupled to the metalized layer. An adhesive is applied to the re-metalized bump and facilitates mechanically coupling the sensor assembly to the sensor system.

Abstract: Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in the patterned dielectric dry film are aligned with conductive pads of each of the plurality of semiconductor devices.

Abstract: Methods of fabricating a semiconductor device are provided. The method includes providing a plurality of semiconductor devices. The method further includes disposing a dielectric dry film on the plurality of semiconductor devices, wherein the dielectric dry film is patterned such that openings in the patterned dielectric dry film are aligned with conductive pads of each of the plurality of semiconductor devices.