Patents by Inventor David Seo
David Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9130567Abstract: An inverter device including a tunable diode device and a diode device that includes a control terminal connected to an input terminal of the inverter device, an anode terminal connected to a high-level voltage terminal, and a cathode terminal connected to an output terminal of the inverter device, wherein the diode device is configured to turn on or off according to a voltage applied to the control terminal.Type: GrantFiled: August 30, 2012Date of Patent: September 8, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Young-jun Yun, Sang-wook Kim, Seong-jun Park, David Seo, Young-hee Yvette Lee, Chang-seung Lee
-
Patent number: 9108848Abstract: Example embodiments relate to methods of manufacturing and transferring a larger-sized graphene layer. A method of transferring a larger-sized graphene layer may include forming a graphene layer, a protection layer, and an adhesive layer on a substrate and removing the substrate. The graphene layer may be disposed on a transferring substrate by sliding the graphene layer onto the transferring substrate.Type: GrantFiled: September 21, 2010Date of Patent: August 18, 2015Assignees: Samsung Electronics Co., Ltd., Sungkyunkwan University Foundation For Corporate CollaborationInventors: Yun-sung Woo, David Seo, Su-kang Bae, Sun-ae Seo, Hyun-jong Chung, Sae-ra Kang, Jin-seong Heo, Myung-hee Jung
-
Publication number: 20150228804Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.Type: ApplicationFiled: April 22, 2015Publication date: August 13, 2015Applicant: Seoul National University R&DB FoundationInventors: Jae-ho LEE, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Hyung-cheol SHIN, Jae-hong LEE, Hyun-jong CHUNG, Jin-seong HEO
-
Patent number: 9105556Abstract: According to example embodiments, a tunneling field-effect transistor (TFET) includes a first electrode on a substrate, a semiconductor layer on a portion of the first electrode, a graphene channel on the semiconductor layer, a second electrode on the graphene channel, a gate insulating layer on the graphene channel, and a gate electrode on the gate insulating layer. The first electrode may include a portion that is adjacent to the first area of the substrate. The semiconductor layer may be between the graphene channel and the portion of the first electrode. The graphene channel may extend beyond an edge of at least one of the semiconductor layer and the portion of the first electrode to over the first area of the substrate.Type: GrantFiled: May 31, 2013Date of Patent: August 11, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Jin-seong Heo, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Jae-ho Lee, Hyun-jong Chung
-
Patent number: 9099304Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.Type: GrantFiled: March 14, 2014Date of Patent: August 4, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Mohammad Rakib Uddin, David Seo, Moon-seung Yang, Ji-hyun Hur
-
Patent number: 9064777Abstract: According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.Type: GrantFiled: August 22, 2012Date of Patent: June 23, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jin-Seong Heo, Hyun-jong Chung, Hyun-jae Song, Seong-jun Park, David Seo, Hee-jun Yang
-
Patent number: 9054708Abstract: A touch sensor using a graphene diode and/or a touch panel including the touch sensor. The touch sensor includes a first sensing electrode configured to sense a touch; a first output line configured to transmit an electrical signal; and a first diode device including a first control terminal connected to the first sensing electrode, a first anode terminal connected to a voltage application unit, and a first cathode terminal connected to the first output line.Type: GrantFiled: January 9, 2013Date of Patent: June 9, 2015Assignee: SAMSUNG ELECTRONICS CO., LTD.Inventors: Sang-wook Kim, Seong-jun Park, David Seo, Young-jun Yun, Yung-hee Yvette Lee, Chang-seung Lee
-
Patent number: 9053932Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.Type: GrantFiled: June 14, 2013Date of Patent: June 9, 2015Assignee: Samsung Electronics Co., Ltd.Inventors: Dong Wook Lee, Hyeon-jin Shin, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Yun-sung Woo, Jae-ho Lee, Hyun-jong Chung, Jin-seong Heo
-
Patent number: 9048310Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.Type: GrantFiled: August 12, 2013Date of Patent: June 2, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R & DB FOUNDATIONInventors: Jae-ho Lee, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hyung-cheol Shin, Jae-hong Lee, Hyun-jong Chung, Jin-seong Heo
-
Patent number: 9040957Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.Type: GrantFiled: February 21, 2013Date of Patent: May 26, 2015Assignees: SAMSUNG ELECTRONICS CO., LTD., SEOUL NATIONAL UNIVERSITY R&DB FOUNDATIONInventors: Jae-ho Lee, Seong-jun Park, Kyung-eun Byun, David Seo, Hyun-jae Song, Hyung-cheol Shin, Jae-hong Lee, Hyun-jong Chung, Jin-seong Heo
-
Publication number: 20150123078Abstract: According to example embodiments, a graphene device includes a first electrode, a first insulation layer on the first electrode, an information storage layer on the first insulation layer, a second insulation layer on the information storage layer, a graphene layer on the second insulation layer, a third insulation layer on a first region of the graphene layer, a second electrode on the third insulation layer, and a third electrode on a second region of the graphene layer.Type: ApplicationFiled: October 3, 2014Publication date: May 7, 2015Inventors: David SEO, Ho-jung KIM, In-kyeong YOO, Myoung-jae LEE, Seong-ho CHO
-
Publication number: 20150061088Abstract: The present disclosure relates to a semiconductor device including an oxygen gettering layer between a group III-V compound semiconductor layer and a dielectric layer, and a method of fabricating the semiconductor device. The semiconductor device may include a compound semiconductor layer; a dielectric layer disposed on the compound semiconductor layer; and an oxygen gettering layer interposed between the compound semiconductor layer and the dielectric layer. The oxygen gettering layer includes a material having a higher oxygen affinity than a material of the compound semiconductor layer.Type: ApplicationFiled: March 13, 2014Publication date: March 5, 2015Inventors: Dong-soo LEE, Myoung-Jae LEE, Seong-ho CHO, Mohammad Rakib Uddin, David SEO, Moon-seung YANG, Sang-moon LEE, Sung-hun LEE, Ji-hyun HUR, Eui-chul HWANG
-
Publication number: 20150028278Abstract: Provided are nonvolatile memory transistors and devices including the nonvolatile memory transistors. A nonvolatile memory transistor may include a channel element, a gate electrode corresponding to the channel element, a gate insulation layer between the channel element and the gate electrode, an ionic species moving layer between the gate insulation layer and the gate electrode, and a source and a drain separated from each other with respect to the channel element. A motion of an ionic species at the ionic species moving layer occurs according to a voltage applied to the gate electrode. A threshold voltage changes according to the motion of the ionic species. The nonvolatile memory transistor has a multi-level characteristic.Type: ApplicationFiled: July 28, 2014Publication date: January 29, 2015Inventors: Myoung-jae Lee, Seong-ho Cho, Ho-jung Kim, Young-soo Park, David Seo, In-kyeong Yoo
-
Publication number: 20150028458Abstract: A semiconductor device is provided that includes a diffusion barrier layer between a compound semiconductor layer and a dielectric layer, as well as a method of fabricating the semiconductor device, such that the semiconductor device includes a compound semiconductor layer; a dielectric layer; and a diffusion barrier layer including an oxynitride formed between the compound semiconductor layer and the dielectric layer.Type: ApplicationFiled: March 14, 2014Publication date: January 29, 2015Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-soo Lee, Eui-chul Hwang, Seong-ho Cho, Myoung-jae Lee, Sang-moon Lee, Sung-hun Lee, Rakib Uddin Mohammad, David Seo, Moon-seung Yang, Ji-hyun Hur
-
Publication number: 20140299944Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the first electrode, the graphene layer, and the semiconductor substrate.Type: ApplicationFiled: April 3, 2014Publication date: October 9, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Hyun-jong CHUNG, David SEO, Seong-jun PARK, Kyung-eun BYUN, Hyun-jae SONG, Hee-jun YANG, Jin-seong HEO
-
Publication number: 20140231752Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.Type: ApplicationFiled: February 14, 2014Publication date: August 21, 2014Applicant: Samsung Electronics Co., Ltd.Inventors: Hyeon-jin SHIN, Kyung-eun BYUN, Hyun-jae SONG, Seong-jun PARK, David SEO, Yun-sung WOO, Dong-wook LEE, Jae-ho LEE, Hyun-jong CHUNG, Jin-seong HEO, In-kyeong YOO
-
Publication number: 20140231820Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.Type: ApplicationFiled: August 6, 2013Publication date: August 21, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Jae-ho LEE, Hyun-jong CHUNG, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Jin-seong HEO
-
Publication number: 20140158989Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm?3, and a depletion width of less than or equal to 3 nm.Type: ApplicationFiled: December 11, 2013Publication date: June 12, 2014Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Kyung-eun BYUN, Seong-jun PARK, David SEO, Hyun-jae SONG, Jae-ho LEE, Hyun-jong CHUNG, Jin-seong HEO
-
Patent number: 8742400Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.Type: GrantFiled: April 12, 2013Date of Patent: June 3, 2014Assignee: Samsung Electronics Co., Ltd.Inventors: David Seo, Sang-wook Kim, Seong-jun Park, Young-jun Yun, Yung-hee Yvette Lee, Chang-seung Lee
-
Publication number: 20140141600Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.Type: ApplicationFiled: June 14, 2013Publication date: May 22, 2014Inventors: Dong Wook LEE, Hyeon-jin SHIN, Seong-jun PARK, Kyung-eun BYUN, David SEO, Hyun-jae SONG, Yun-sung WOO, Jae-ho LEE, Hyun-jong CHUNG, Jin-seong HEO