Abstract: A method for forming a semiconductor device involves providing a semiconductor wafer having an active layer of a first conductivity type. First and second gates having first and second gate polysilicon are formed on the active layer. A first mask region is formed on the active layer. Between the first and second gates, using the first mask region, the first gate polysilicon, and the second gate polysilicon as a mask, a deep well of a second conductivity type, a shallow well of the second conductivity type, a source region of the first conductivity type, and first and second channel regions of the second conductivity type, are formed. In the active layer, using one or more second mask regions, first and second drift regions of the first conductivity type, first and second drain regions of the first conductivity type, and a source connection region of the second conductivity type, are formed.

Abstract: The present disclosure relates to a composition that includes a solid, a first layer of an ionic liquid including an anion and a cation, a second layer including an ionically conductive ionomer, and a catalyst including a metal positioned on the solid, where the ionic liquid forms a first layer on the solid, the first layer is positioned between the second layer and the solid, and the catalyst is positioned between the solid and the first layer.

Abstract: A method for forming a semiconductor device involves providing a semiconductor wafer having an active layer of a first conductivity type. First and second gates having first and second gate polysilicon are formed on the active layer. A first mask region is formed on the active layer. Between the first and second gates, using the first mask region, the first gate polysilicon, and the second gate polysilicon as a mask, a deep well of a second conductivity type, a shallow well of the second conductivity type, a source region of the first conductivity type, and first and second channel regions of the second conductivity type, are formed. In the active layer, using one or more second mask regions, first and second drift regions of the first conductivity type, first and second drain regions of the first conductivity type, and a source connection region of the second conductivity type, are formed.

Abstract: A method for forming a semiconductor device involves providing a semiconductor wafer having an active layer of a first conductivity type. First and second gates having first and second gate polysilicon are formed on the active layer. A first mask region is formed on the active layer. Between the first and second gates, using the first mask region, the first gate polysilicon, and the second gate polysilicon as a mask, a deep well of a second conductivity type, a shallow well of the second conductivity type, a source region of the first conductivity type, and first and second channel regions of the second conductivity type, are formed. In the active layer, using one or more second mask regions, first and second drift regions of the first conductivity type, first and second drain regions of the first conductivity type, and a source connection region of the second conductivity type, are formed.

Abstract: An improved pump is disclosed comprising a pump body having a piston supported by a base from a fluid reservoir. A trigger extends a between a first portion and a second portion with an intermediate trigger pivot mounted relative to the base. A cam and a cam follower couples the first portion of the trigger with the piston for enabling a depression of the second portion trigger to move the piston to spray fluid from the pump body orifice.

Abstract: An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.

Abstract: A container appendage is disclosed comprising a mounting ring having an upper surface, a lower surface, an exterior edge and an interior edge for defining a mounting aperture. A platform member is coupled to the mounting ring. The mounting ring is coupled between the bottle and the spray body for defining a mounting ring couple. The platform member cantilevers above the handling neck and adjacent to the rear surface for defining a rear ergonomical handling member for conforming to the hand and improving ergonomical grasping of the handling neck, actuating the trigger and lifting the spray bottle by the hand.

Abstract: An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.

Abstract: An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.

Abstract: An improved pump is disclosed comprising a pump body having a piston supported by a base from a fluid reservoir. A trigger extends a between a first portion and a second portion with an intermediate trigger pivot mounted relative to the base. A cam and a cam follower couples the first portion of the trigger with the piston for enabling a depression of the second portion trigger to move the piston to spray fluid from the pump body orifice.

Abstract: An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.

Abstract: Novel and advantageous lighting modules and systems are provided. Lighting modules and systems according to embodiments of the subject invention can be low-luminance, high-efficiency, low-glare lighting modules. For example, a lighting system can utilize multiple layers of efficient optics to spread light from multiple light sources (e.g., a grid of point sources) over a larger luminous surface. The larger luminous surface can maintain the controllability, directionality, and efficiency of a single point source, while significantly reducing the glare. The surface can appear uniformly lit, or substantially uniformly lit, and no dark boundaries may be present between the individual light sources.

Abstract: Methods of selecting umbilical cord blood units for ex-vivo expansion, separation of CD133+/CD34+ positive and uncultured CD133+/CD34+ negative fractions, methods for expanding the selected CD133+/CD34+ fraction, selection of expanded populations of CD133+/CD34+ cord blood cells for transplantation to subjects in need thereof and the therapeutic use of suitable selected, ex-vivo expanded CD133+/CD34+ and unselected CD133/CD34 negative cord blood fractions for transplantation in the clinical setting, for treatment of hematological malignancies are provided. The present invention also envisions kits comprising the expanded and unselected cord blood fractions.

Abstract: A container appendage is disclosed comprising a mounting ring having an upper surface, a lower surface, an exterior edge and an interior edge for defining a mounting aperture. A platform member is coupled to the mounting ring. The mounting ring is coupled between the bottle and the spray body for defining a mounting ring couple. The platform member cantilevers above the handling neck and adjacent to the rear surface for defining a rear ergonomical handling member for conforming to the hand and improving ergonomical grasping of the handling neck, actuating the trigger and lifting the spray bottle by the hand.

Abstract: An improved laterally diffused MOSFET (LDMOS) device enables an ability to tune some device parameters independently of other device parameters and/or provides a device architecture with component dimensions that significantly improve device performance. The LDMOS device includes a stepped gate having a first portion with a thin gate insulator over a body region and a second portion with a thick gate insulator over part of a drift region. In some embodiments, a gate shield is disposed over another part of the drift region to reduce a gate-drain capacitance of the LDMOS device. In some embodiments, the LDMOS device has a specific resistance (Rsp) of about 5-8 mOhm*mm2, a gate charge (Qg) of about 1.9-2.0 nC/mm2, and an Rsp*Qg product figure of merit of about 10-15 mOhm*nC.

Abstract: A fiber material assembly has a base fiber material disposed at least partly behind a oxidized polyacrylonitrile (PAN) fiber material that is secured to at least one side of the base fiber base material. The fiber material assembly provides a high thermal resistance via a low area weight usage of oxidized PAN fibers which overlie a base fiber material. The fiber material assembly can be provided such that the oxidized PAN fiber material provides either full or localized coverage, on one side or both sides, of the underlying base fiber material. The fiber material assembly provides the functionality of an acoustic heat shield or structural part with high thermal capacity.

Abstract: An improved pump is disclosed comprising a pump body having a piston supported by a base from a fluid reservoir. A trigger extends a between a first portion and a second portion with an intermediate trigger pivot mounted relative to the base. A cam and a cam follower couples the first portion of the trigger with the piston for enabling a depression of the second portion trigger to move the piston to spray fluid from the pump body orifice.

Abstract: An automated external defibrillator (AED) is described which spends an increased proportion of a rescue in a CPR mode. This is accomplished by use of a single shock protocol which causes the AED to spend less time in shock analysis and delivery activities as compared with the typical multiple shock protocol. An AED of the present invention preferably is configured such that the rescue protocol can be modified or changed easily without the need to remove the battery or use specialized hardware or software. Preferably the shock waveform of the single shock is a biphasic waveform delivering at least 150 Joules of energy and more preferably at least 200 Joules of energy.

Abstract: Methods for dynamically switching communications to text interactions are provided. In one example, a method includes the steps of receiving a phone call and determining a voice queue wait time exceeds a predetermined threshold. The phone call is routed to a speech-to-text queue based on the determination, and an audio signal associated with the phone call is converted to an instant message interaction.