Abstract: A thermally assisted magnetic memory cell device includes a substrate, a first electrode disposed on the substrate, a magnetic tunnel junction disposed on the first electrode, a second electrode disposed on the magnetic tunnel junction, a conductive hard mask disposed on the second electrode and a parallel shunt path coupled to the magnetic tunnel junction, thereby electrically coupling the first and second electrodes.

Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

Abstract: An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.

Abstract: Methods for writing include applying a current pulse to a racetrack memory medium to position a domain in proximity to a thermally triggered magnon source in contact with the racetrack memory medium; activating a heat source/sink in contact with the magnon source to create a thermal gradient in the magnon source, generating a magnon flow in the magnon source; and changing a magnetization in the racetrack memory medium by spin torque transfer from the magnon flow.

Abstract: Racetrack memory units and methods for writing include a racetrack memory medium; a heat source/sink configured to change temperature according to an applied current; and a magnon source material in contact with the racetrack memory medium and the heat source/sink, such that a temperature of the heat source/sink causes a magnon flow in the magnon source material that injects a domain wall in the racetrack memory medium.

Abstract: A method for fabricating a spintronic cell includes forming a cavity in a substrate, forming a wire in the cavity, depositing a spacer layer over exposed portions of the substrate and the conductive field line, depositing a layer of conductive material on a portion of the spacer layer, removing portions of the layer of conductive material to define a conductive strap portion, wherein the conductive strap portion has a first distal region a second distal region and a medial region arranged therebetween, wherein the medial region has a cross sectional area that is less than a cross sectional area of the first distal region and a cross sectional area of the second distal region, and forming an spintronic device stack on the conductive strap portion above the conductive field line.

Abstract: A synthetic antiferromagnetic device includes a reference layer having a first and second ruthenium layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer and a third ruthenium layer disposed on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0 angstroms to 18 angstroms.

Abstract: A method for fabricating a synthetic antiferromagnetic device, includes depositing a reference layer on a first tantalum layer and including depositing a first cobalt iron boron layer, depositing a second cobalt iron boron layer on the first cobalt iron boron layer, depositing a second Ta layer on the second cobalt iron boron layer, depositing a magnesium oxide spacer layer on the reference layer and depositing a cap layer on the magnesium oxide spacer layer.

Abstract: A synthetic antiferromagnetic device includes a first tantalum layer, a reference layer disposed on the first tantalum layer and including a first cobalt iron boron layer, a second cobalt iron boron layer disposed on the first cobalt iron boron layer, a third cobalt iron boron layer and a second tantalum layer disposed between the second and third cobalt iron boron layers, a magnesium oxide spacer layer disposed on the reference layer and a cap layer disposed on the magnesium oxide spacer layer.

Abstract: A synthetic antiferromagnetic device includes a reference layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer, and a first ruthenium layer disposed on cobalt iron boron layer, the first ruthenium layer having a thickness of approximately 0 ? to 32 ?.

Abstract: A method for fabricating a synthetic antiferromagnetic device, includes depositing a magnesium oxide spacer layer on a reference layer having a first and second ruthenium layer, depositing a cobalt iron boron layer on the magnesium oxide spacer layer; and depositing a third ruthenium layer on the cobalt iron boron layer, the third ruthenium layer having a thickness of approximately 0-18 angstroms.

Abstract: A synthetic antiferromagnetic device includes a reference layer, a magnesium oxide spacer layer disposed on the reference layer, a cobalt iron boron layer disposed on the magnesium oxide spacer layer, and a first ruthenium layer disposed on cobalt iron boron layer, the first ruthenium layer having a thickness of approximately 0 ? to 32 ?.

Abstract: Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.

Abstract: A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.

Abstract: A mechanism is provided for noncontact writing. Multiple magnetic islands are provided on a nonmagnetic layer. A reference layer is provided under the nonmagnetic layer. A spin-current is caused to write a state to a magnetic island of the multiple magnetic islands by moving a heat source to heat the magnetic island.

Abstract: A mechanism is provided for noncontact writing. Multiple magnetic islands are provided on a nonmagnetic layer. A reference layer is provided under the nonmagnetic layer. A spin-current is caused to write a state to a magnetic island of the multiple magnetic islands by moving a heat source to heat the magnetic island.

Abstract: A mechanism is provided for bidirectional writing. A structure includes a reference layer on top of a tunnel barrier, a free layer underneath the tunnel barrier, a metal spacer underneath the free layer, an insulating magnet underneath the metal spacer, and a high resistance layer underneath the insulating layer. The high resistance layer acts as a heater in which the heater heats the insulating magnet to generate spin polarized electrons. A magnetization of the free layer is destabilized by the spin polarized electrons generated from the insulating magnet. A voltage is applied to change the magnetization of the free layer when the magnetization is destabilized. A polarity of the voltage determines when the magnetization of the free layer is parallel and antiparallel to a magnetization of the reference layer.

Abstract: An apparatus is provided for bidirectional writing. A stack includes a reference layer on a tunnel barrier, the tunnel barrier on a free layer, and the free layer on a metal spacer. The apparatus includes an insulating magnet. A Peltier material is thermally coupled to the insulating magnet and the stack. When the Peltier/insulating magnet interface is cooled, the insulating magnet is configured to transfer a spin torque to rotate a magnetization of the free layer in a first direction. When the Peltier/insulating magnet interface is heated, the insulating magnet is configured to transfer the spin torque to rotate the magnetization of the free layer in a second direction.

Abstract: Processes for selectively patterning a magnetic film structure generally include selectively etching an exposed portion of a freelayer disposed on a tunnel barrier layer by a wet process, which includes exposing the freelayer to an etchant solution comprising at least one acid and an organophosphorus acid inhibitor or salt thereof, stopping on the tunnel barrier layer.

Abstract: Techniques for attaining high performance magnetic memory devices are provided. In one aspect, a magnetic memory device comprising one or more free magnetic layers is provided. The one or more free magnetic layers comprise a low magnetization material adapted to have a saturation magnetization of less than or equal to about 600 electromagnetic units per cubic centimeter. The device may be configured such that a ratio of mean switching field associated with an array of non-interacting magnetic memory devices and a standard deviation of the switching field is greater than or equal to about 20. The magnetic memory device may comprise a magnetic random access memory (MRAM) device. A method of producing a magnetic memory device is also provided.