Patents by Inventor David William Abraham
David William Abraham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9455887Abstract: A distributed performance evaluation framework provides functionality for evaluating the availability, reliability, and scalability of a network-based service. The framework includes a control and reporting tier and a load-generating tier. The control and reporting tier provides a control interface through which a request to evaluate the performance of a service may be received. In response to receiving such a request, the control and reporting tier creates a load-generating job for use by the load-generating tier. Load-generating instances in the load-generating tier are configured to perform the load-generating job by executing instances of a load-generating plug-in configured to generate requests to the service. The load-generating instances also periodically provide data regarding the status of each load-generating job to the control and reporting tier.Type: GrantFiled: August 14, 2013Date of Patent: September 27, 2016Assignee: Amazon Technologies, Inc.Inventors: Divyang Mahendrabhai Upadhyay, David William Abrahams
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Patent number: 8901685Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.Type: GrantFiled: April 20, 2007Date of Patent: December 2, 2014Assignee: International Business Machines CorporationInventors: Snorri Thorgeir Ingvarsson, Philip Louis Trouilloud, Shouheng Sun, Roger Hilsen Koch, David William Abraham
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Patent number: 8358153Abstract: A magnetic circuit in one aspect comprises a plurality of tapered magnetic wires each having a relatively wide input end and a relatively narrow output end, with the output end of a first one of the tapered magnetic wires being coupled to the input end of a second one of the tapered magnetic wires. Each of the tapered magnetic wires is configured to propagate a magnetic domain wall along a length of the wire in a direction of decreasing width from its input end to its output end. In an illustrative embodiment, the magnetic circuit comprises a logic buffer that includes at least one heating element. The heating element may be controlled to facilitate transfer of a magnetic moment from the output end of the first tapered magnetic wire to the input end of the second tapered magnetic wire.Type: GrantFiled: May 19, 2010Date of Patent: January 22, 2013Assignee: International Business Machines CorporationInventors: Daniel Christopher Worledge, David William Abraham
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Publication number: 20120329177Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.Type: ApplicationFiled: September 4, 2012Publication date: December 27, 2012Applicant: International Business Machines CorporationInventors: David William Abraham, Guohan Hu, Jonathan Zanhong Sun, Daniel Christopher Worledge
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Patent number: 8324009Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.Type: GrantFiled: October 22, 2010Date of Patent: December 4, 2012Assignee: International Business Machines CorporationInventors: Snorri Thorgeir Ingvarsson, Philip L. Trouilloud, Shouheng Sun, Roger Hilsen Koch, David William Abraham
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Patent number: 8102174Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: GrantFiled: January 29, 2009Date of Patent: January 24, 2012Assignee: Infineon Technologies North America Corp.Inventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Publication number: 20110286255Abstract: A magnetic circuit in one aspect comprises a plurality of tapered magnetic wires each having a relatively wide input end and a relatively narrow output end, with the output end of a first one of the tapered magnetic wires being coupled to the input end of a second one of the tapered magnetic wires. Each of the tapered magnetic wires is configured to propagate a magnetic domain wall along a length of the wire in a direction of decreasing width from its input end to its output end. In an illustrative embodiment, the magnetic circuit comprises a logic buffer that includes at least one heating element. The heating element may be controlled to facilitate transfer of a magnetic moment from the output end of the first tapered magnetic wire to the input end of the second tapered magnetic wire.Type: ApplicationFiled: May 19, 2010Publication date: November 24, 2011Applicant: International Business Machines CorporationInventors: Daniel Christopher Worledge, David William Abraham
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Patent number: 8027185Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: GrantFiled: August 11, 2009Date of Patent: September 27, 2011Assignees: International Business Machines Corporation, Infineon Technologies North America Corp.Inventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Patent number: 8004278Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: GrantFiled: August 11, 2009Date of Patent: August 23, 2011Assignees: International Business Machines Corporation, Infineon Technologies North America Corp.Inventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Publication number: 20110039020Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.Type: ApplicationFiled: October 22, 2010Publication date: February 17, 2011Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Snorri Thorgeir Ingvarsson, Philip Louis Trouilloud, Shouheng Sun, Roger Hilsen Koch, David William Abraham
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Patent number: 7880208Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.Type: GrantFiled: June 10, 2003Date of Patent: February 1, 2011Assignee: International Business Machines CorporationInventors: Snorri Thorgeir Ingvarsson, Philip Louis Trouilloud, Shouheng Sun, Roger Hilsen Koch, David William Abraham
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Publication number: 20100320550Abstract: Magnetoresistive structures, devices, memories, and methods for forming the same are presented. For example, a magnetoresistive structure includes a ferromagnetic layer, a ferrimagnetic layer coupled to the ferromagnetic layer, a pinned layer and a nonmagnetic spacer layer. A free side of the magnetoresistive structure comprises the ferromagnetic layer and the ferrimagnetic layer. The nonmagnetic spacer layer is at least partly between the free side and the pinned layer. A saturation magnetization of the ferromagnetic layer opposes a saturation magnetization of the ferrimagnetic layer. The nonmagnetic spacer layer may include a tunnel barrier layer, such as one composed of magnesium oxide (MgO), or a nonmagnetic metal layer.Type: ApplicationFiled: June 23, 2009Publication date: December 23, 2010Applicant: International Business Machines CorporationInventors: David William Abraham, Guohan Hu, Jonathan Zanhong Sun, Daniel Christopher Worledge
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Publication number: 20100023287Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: ApplicationFiled: August 11, 2009Publication date: January 28, 2010Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Publication number: 20090309587Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: ApplicationFiled: August 11, 2009Publication date: December 17, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Publication number: 20090309145Abstract: A magnetic thin film includes a magnetic tunnel junction defined by a surrounding region including a fluorinated, non-magnetic, electrically insulating material.Type: ApplicationFiled: August 20, 2009Publication date: December 17, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: David William Abraham, Eugene John O'Sullivan
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Patent number: 7622735Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: GrantFiled: May 2, 2005Date of Patent: November 24, 2009Assignee: International Business Machines CorporationInventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Patent number: 7611911Abstract: A method (and resulting structure) of patterning a magnetic thin film, includes using a chemical transformation of a portion of the magnetic thin film to transform the portion to be non-magnetic and electrically insulating.Type: GrantFiled: October 8, 2003Date of Patent: November 3, 2009Assignee: International Business Machines CorporationInventors: David William Abraham, Eugene John O'Sullivan
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Publication number: 20090267597Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: ApplicationFiled: January 29, 2009Publication date: October 29, 2009Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Publication number: 20090261820Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.Type: ApplicationFiled: May 2, 2005Publication date: October 22, 2009Applicants: International Business Machines Corporation, Infineon Technologies North America Corp.Inventors: Daniel Christopher Worledge, Philip Louis Trouilloud, David William Abraham, Joerg Dietrich Schmid
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Patent number: 7453747Abstract: A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.Type: GrantFiled: October 1, 2007Date of Patent: November 18, 2008Assignee: International Business Machines CorporationInventors: David William Abraham, Philip Louis Trouilloud