Abstract: A method and apparatus for minimizing errors that may occur when writing information to a magnetic memory cell array with an operating write current due to changes in the local magnetic fields and. A test write current is sent to a reference memory cell and the effect of the test current on the orientation of the magnetization in the reference cell is monitored. The write current is then modified to compensate for any changes in the optimum operating point that have occurred. Arrays of reference magnetic memory cells having varying properties may be used to more accurately characterize any changes that have occurred in the operating environment. A phase difference between a time varying current used to drive the reference cell and the corresponding variations in the orientation of the magnetization in the reference cell may also be used to further characterize changes in the operating environment.

Abstract: A compensation system for an array of magnetic memory cells measures local operating conditions and compensates for changes in the operating characteristics of the magnetic memory cells in the array that result from the changes in the operating conditions. The magnetic field strength near the magnetic memory array is measured. If the magnetic field strength rises above, or falls below certain predetermined threshold values, the write current used to alter the orientation of the magnetic fields in the magnetic memory cells is altered based upon the predetermined operating characteristics of the memory cells. A solenoid or similar type magnetic field generator may also be used to substantially compensate for variations in the sensed magnetic fields. In addition, the temperature of the environment in which the magnetic memory cells are operating is sensed and appropriate changes made in the write current.

Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

Abstract: Magnetic materials and uses thereof are provided. In one aspect, a magnetic film is provided. The magnetic film comprises superparamagnetic particles on at least one surface thereof. The magnetic film may be patterned and may comprise a ferromagnetic material. The superparamagnetic particles may be coated with a non-magnetic polymer and/or embedded in a non-magnetic host material. The magnetic film may have increased damping and/or decreased coercivity.

Abstract: Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.

Abstract: A work station comprising a plurality of computers, and a method of operating that work station. Each of the computers at the work station includes a keyboard port and a pointing device port; and the work station further comprises a single external user keyboard, a single external pointing device, and a fanout switching unit connected to and for interfacing between the computers and the external keyboard and pointing device. In use, at any given time, the external keyboard and pointing device control a selected one of the computers, via the fanout switching unit. The fanout switching unit, acting in response to a predefined switching command from at least one of the external keyboard and pointing device, changes, or switches, the computer that is controlled by the external keyboard and pointing device. In particular, the computer that is controlled changes from a first of the computers to a second of the computers.

Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.

Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

Abstract: Magnetoresistive devices are disclosed which include a changeable magnetic region within which at least two magnetic states can be imposed. Upon magnetoresistive electrical interaction with the device, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate reference magnetic region, can be sensed thereby providing a binary data storage capability. The present invention limits the electrical interaction to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably predicted to be substantially uniform, and opposite of one another. Structures for limiting the electrical interaction to this preferred portion of the changeable magnetic region are disclosed, and include smaller interaction regions, and alternating areas of insulation and conductive, interaction regions, disposed proximate the changeable magnetic region.

Abstract: A method and apparatus for calibrating a thermal response of a magnetoresistive element is provided. In accordance with one embodiment of the invention, a thermal spacing signal is read using an MR element spaced apart from a surface of a moving storage medium. From the thermal spacing signal a signal value and calibration value are produced. Using the signal value and the calibration value a calibrated signal value is produced. The calibrated signal value may, for example, be compared against a pre-determined threshold to detect surface defects on the storage medium.

Abstract: Magnetic memory cells include a changeable magnetic region with a magnetic axis along which two directions of magnetization can be imposed, thereby providing two respective states into which the cells are changeable according to electrical and resultant magnetic stimuli applied thereto. Asymmetry in the magnetic stimuli applied to the cell while writing a state therein is disclosed to provide a predictable magnetization pattern evolution from the first direction to the second direction. Physical asymmetry in the layout and/or magnetization of the cell is also disclosed which provides the predictable pattern evolution. These principles can be applied to magnetic random access memory (MRAM) arrays which employ magnetic tunnel junction (MTJ) cells at the intersections of bitlines and wordlines which supply the electrical and resultant magnetic stimuli to write the cells therein.

Abstract: An apparatus and method for reading an information signal from a magnetic storage medium using a magnetoresistive (MR) head, and separating a thermal signal component and, if present, a magnetic signal component from the information signal. A signal separation/restoration module eliminates distortion in the magnetic signal component of a readback signal induced by a thermal signal component of the readback signal. A finite impulse response (FIR) filter may be employed in the signal separation/restoration module to eliminate the distortion in the magnetic signal. The signal separation/restoration module may be employed to extract the thermal signal component from the readback signal. In one configuration, an MR head is coupled to an arm electronics (AE) module, having a highpass filtering behavior, and a signal separation/restoration module that includes an inverse filter having a transfer function inverse to that of the effective highpass filter of the AE module.

Abstract: Magnetic memory devices are disclosed having multiple magnetic tunnel junctions therein writable together into an average state. For example, a magnetic random access memory ("MRAM") array is disclosed having respective pluralities of crossing first and second electrically conductive lines forming a plurality of intersecting regions across the array. The array includes a plurality of magnetic memory cells, each disposed at a respective one of the plurality of intersecting regions. Each cell includes at least two magnetic tunnel junctions therein, writable together into an average state, according to electrical and resultant magnetic stimuli applied thereto via a respective first and second conductive line. The at least two magnetic tunnel junctions provided in each magnetic memory cell provide a predictable magnetic response for all cells across the array.

Abstract: The invention discloses a microprocessor controlled assembly which allows multiple computers and display screens to be controlled using a single external pointing device/keyboard combination. The invention can provide nearly user-invisible switching for a selection of a particular computer, and can substantially reduce environmental clutter as is increasing ergonomic functioning.

Abstract: A method and apparatus for accessing a data storage medium having raised and lowered portions indicative of data stored on the medium. Energy is supplied to a sensor which is moved relative to, and in close proximity to, a surface of the medium on which the data in the form of raised and lowered portions is stored. The sensor and the storage medium are moved in relation thereto, such that the sensor remains at a substantially constant fly spacing therefrom. A decrease in temperature of the sensor is detected when it is in proximity to a variation, i.e., a raised portion on the medium. This detected decrease in temperature associated with a raised variation, e.g., asperity, can be used as the basis upon which to detect the data on the data storage medium. The data storage medium may also contain magnetically stored data, such that the surface variations and the magnetic characteristics of the data storage medium can both be utilized to store data thereon.

Abstract: A method and apparatus for mapping the character and location of medium conditions for a planar surface. Energy is supplied to a head in close proximity to the planar surface to thereby raise the temperature of the object. The head is moved with respect to the planar surface while keeping the distance from the planar surface substantially constant. An increase, decrease or a rapid variation containing positive and negative temperature excursions is distinguished by electronic means. These variations are used to categorize disturbances or contact with the medium, and the location and type of condition is recorded in hard copy or by computer acquisition for later consideration in the file manufacture process. Additionally, magnetic and thermal information may be combined to provide an even more complete description of the nature of the condition, since the magnetic and thermal signals are descriptive of different physical phenomenon.

Abstract: Apparatus and methods for calibrating a thermal proximity sensor are disclosed. Thermal responses from a thermal proximity sensor are used to sense the instantaneous distance between the sensor and a medium over which the sensor is moved, in a data storage system. Sensing the instantaneous distance results in detection of topographical variations on the medium. Calibration techniques for the sensor are disclosed herein and involve, in one aspect, using primarily electrical measurements to calibrate the sensor; and in another aspect, varying the distance between the sensor and the medium, obtaining actual thermal responses from the sensor, and using the actual responses (via direct comparison or curve fitting) to calibrate the sensor. In one embodiment, the sensor is a magnetoresistive access element used to access data on the medium.

Abstract: Magnetic devices are disclosed which include a changeable magnetic region, within which each of two magnetic states can be imposed, using an applied magnetic writing stimuli. Upon subsequent electrical tunneling through the device, for example, the relative orientation of the magnetic states of the changeable magnetic region, and a proximate, reference magnetic region, can be sensed, thereby providing a binary storage capability. The present invention limits the magnetic writing stimuli to only a preferred portion of the changeable magnetic region, e.g., the portion within which the two magnetic states can be dependably written opposite of one another.

Abstract: A method and apparatus for accessing a data storage medium having raised and lowered portions indicative of data stored on the medium. Energy is supplied to a sensor which is moved relative to, and in close proximity to, a surface of the medium on which the data in the form of raised and lowered portions is stored. The sensor and the storage medium are moved in relation thereto, such that the sensor remains at a substantially constant fly spacing therefrom. A decrease in temperature of the sensor is detected when it is in proximity to a variation, i.e., a raised portion on the medium. This detected decrease in temperature associated with a raised variation, e.g., asperity, can be used as the basis upon which to detect the data on the data storage medium. The data storage medium may also contain magnetically stored data, such that the surface variations and the magnetic characteristics of the data storage medium can both be utilized to store data thereon.