Abstract: A method of laser welding together two or more overlapping metal workpieces (12, 14, or 12, 150, 14) included in a welding region (16) of a workpiece stack-up (10) involves advancing a beam spot (44) of a laser beam (24) relative to a top surface (20) of the workpiece stack-up along a first weld path (72) in a first direction (74) to form an elongated melt puddle (76) and, then, advancing the beam spot (44) of the laser beam (24) along a second weld path (78) in a second direction (80) that is opposite of the first direction while the elongated melt puddle is still in a molten state. The first weld path and the second weld path overlap so that the beam spot of the laser beam is conveyed through the elongated melt puddle when the beam spot is advanced along the second weld path.

Abstract: A seamless knit enclosure for a headphone unit is provided. The seamless knit enclosure may include a pair of earpieces and a headband spanning therebetween. The seamless knit enclosure may include a first region and a second region. The first region may have a stitch construction that has a first elasticity. The second region may have a second stitch construction that has a second elasticity that is different than the first.

Abstract: A semiconductor fabrication apparatus includes a source chamber being operable to generate charged particles; and a processing chamber integrated with the source chamber and configured to receive the charged particles from the source chamber. The processing chamber includes a wafer stage being operable to secure and move a wafer, and a laser-charged particles interaction module that further includes a laser source to generate a first laser beam; a beam splitter configured to split the first laser beam into a second laser beam and a third laser beam; and a mirror configured to reflect the third laser beam such that the third laser beam is redirected to intersect with the second laser beam to form a laser interference pattern at a path of the charged particles, and wherein the laser interference pattern modulates the charged particles by in a micron-zone mode for processing the wafer using the modulated charged particles.

Abstract: A method of fabricating a semiconductor device includes forming a structure including multiple nanowires vertically stacked above a substrate; depositing a dielectric material layer wrapping around the nanowires; performing a treatment process to a surface portion of the dielectric material layer; selectively etching the surface portion of the dielectric material layer; repeating the steps of performing the treatment process and selectively etching until the nanowires are partially exposed; and forming a gate structure engaging the nanowires.

Abstract: The LTCC (Low Temperature Co-fired Ceramic) substrate is used to form an antenna structure operating at 60 GHz. The dielectric constant is high and ranges from 5 to 8. The substrate thickness is fabricated with a thickness between 360 ?m to 700 ?m. The large dielectric constant and large thickness of the substrate creates a guiding wave in the LTCC that forms an endfire antenna. A high gain signal of 10 dB in a preferred direction occurs by placing the microstrip fed dipole structure in the center of the LTCC substrate creating a dielectric cavity resonator. The creation of a slot in the LTCC substrate between the two microstrip fed dipole structures eliminates beam tilting and allows for the two microstrip fed dipole structures to reduce the coupling to each other thereby providing substantially two isolated endfire antennas. These antennas can be used as multiple receive or transmit antennas.

Abstract: A method of laser welding together two or more overlapping light metal workpieces (12, 14, or 12, 150, 14) involves advancing a laser beam (24) relative to the top surface (20) of the workpiece stack-up (10) multiple times along a closed-curve weld path (72). The conductive heat transfer associated with such advancement of the laser beam (24) grows and develops a larger melt puddle (76) that penetrates into the workpiece stack-up (10) and intersects each faying interface (34 or 160, 162) established within the stack-up (10). Upon halting transmission of the laser beam (24) or otherwise removing the laser beam (24) from the closed-curved weld path (72), the melt puddle (76) solidifies into a laser weld joint (66) comprised of resolidified composite workpiece material (78).

Abstract: An apparatus for trimming a sheet metal workpiece includes a base to support the sheet metal workpiece at a working position on the base. A shearing tool is connected to the base to trim the sheet metal workpiece by mechanically inducing a shearing stress on the sheet metal workpiece to form an edge at an edge location on the sheet metal workpiece. A heater is connected to the base to define a heated region on the sheet metal workpiece by heating at least the edge location on the sheet metal workpiece after the sheet metal workpiece is in the working position. The apparatus includes a temperature sensor to detect a surface temperature of the heated region.

Abstract: A method for joining together metal workpieces (12, 14, 150) includes advancing a beam spot (44) of a laser beam (24) relative to the top surface (20) of the workpiece stack-up (10) along a primary beam travel pattern (78) to create a molten metal portion (70) within the workpiece stack-up and, thereafter, reducing a power density of the laser beam and moving the beam spot of the laser beam relative to an upper surface (82) of the molten metal portion along a secondary beam travel pattern (84) to introduce heat into the molten metal portion such that the molten metal portion is prevented from fully solidifying and at least an upper region (86) of the molten metal portion that includes the upper surface is maintained in a molten state. The laser beam is then removed from the molten metal portion to allow the molten metal portion to solidify into a laser weld joint (66). The laser weld joint have a smooth top surface.

Abstract: A method for joining together metal workpiece (12,14 or 12,150,14) includes forming a laser weld joint (66) in a workpiece stack-up (10) that fusion welds two or more overlapping metal workpiece (12,14 or 12,150 or 14) together. The laser weld joint (66) has an initial top surface (76). Once the laser weld joint (66) is formed, the method calls for impinging the laser weld joint (66) with a laser beam (24) and moving the laser beam (24) along the initial joint (66) including the initial top surface (76). The laser beam (24) is eventually removed from the laser weld joint (66) to allow the melted upper portion (78) of the joint (66) to resolidify and provide the laser weld joint (66) with a modified top surface (84) that is smoother than the initial top surface (76). By providing the laser weld joint with a smoother modified top surface, residual stress concentration points are removed and the laser weld joint is less liable to damage seal strips.

Abstract: A method for forming a semiconductor device structure is provided. The method for forming a semiconductor device structure includes forming a fin structure over a substrate. The fin structure includes first semiconductor layers and second semiconductor layers alternately stacked. The method for forming the semiconductor device structure also includes removing the first semiconductor layers of the fin structure in a channel region thereby exposing the second semiconductor layers of the fin structure. The method for forming the semiconductor device structure also includes forming a dielectric material surrounding the second semiconductor layers, and treating a first portion of the dielectric material. The method for forming the semiconductor device structure also includes etching the first portion of the dielectric material to form gaps, and filling the gaps with a gate stack.

Abstract: A method of laser welding a workpiece stack-up (10) that includes at least two overlapping steel workpieces, at least one of which includes a surface coating of a zinc-based material. The method includes forming at least one preliminary weld deposit (74) in the workpiece stack-up (10) and, thereafter, forming a principal laser weld joint. The formation of the principal laser spot weld joint involves advancing a principal welding laser beam (90) relative to a plane of the top surface (20) of the workpiece stack-up (10) along a beam travel pattern (104) that lies within an annular weld area (92). The beam travel pattern (104) of the principal welding laser beam (90) surrounds a center area (98) on the plane of the top surface (20) that spans the at least one preliminary weld deposit (74) formed in the workpiece stack-up (10).

Abstract: A method of forming an air-gap spacer in a semiconductor device includes providing a device including a gate stack, a plurality of spacer layers disposed on a sidewall of the gate stack, and a source/drain feature adjacent to the gate stack. In some embodiments, a first spacer layer of the plurality of spacer layers is removed to form an air gap on the sidewall of the gate stack. In various examples, a first sealing layer is then deposited over a top portion of the air gap to form a sealed air gap, and a second sealing layer is deposited over the first sealing layer. Thereafter, a first self-aligned contact (SAC) layer is etched from over the source/drain feature using a first etching process. In various embodiments, the first etching process selectively etches the first SAC layer while the first and second sealing layers remain unetched.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a first semiconductor fin that extends from a substrate. The first semiconductor fin has source and drain regions, which are separated from one another by a channel region in the first semiconductor fin. A gate overlies an upper surface and sidewalls of the channel region. A contact is coupled to the source or drain region of the first semiconductor fin, where the source or drain region includes a layer of epitaxial material with a substantially diamond-shaped cross-section. The contact surrounds the source or drain region on top and bottom surfaces of the substantially diamond-shaped cross-section. A first capping material is arranged along outer sidewalls of the first semiconductor fin under the contact. The first capping material has an uppermost surface that is spaced below a lowermost surface of the contact by a non-zero distance.

Abstract: A method of laser spot welding a workpiece stack-up (10) that includes at least two overlapping steel workpieces (12, 14, 150) is disclosed. The method includes directing a plurality of laser beams (24, 24?, 24?) at the top surface (20) of the workpiece stack-up to create a molten steel weld pool (92) that penetrates into the stack-up. The molten steel weld pool is then grown to penetrate further into the stack-up by increasing an overall combined irradiance of the laser beams while reducing the total projected sectional area (88) of the laser beams at a plane of the top surface of the workpiece stack-up. Increasing the overall combined irradiance of the laser beams may be accomplished by moving the focal points (66, 66?, 66?) of the laser beams closer to the top surface or by reducing the mean angle of incidence (86) of the laser beams so as to reduce the eccentricity of the individual projected sectional areas of the laser beams.

Abstract: A method of laser welding a workpiece stack-up (10, 10?) that includes at least two overlapping metal workpieces (12, 150, 14) comprises advancing a beam spot (44) of a laser beam (24) relative to a top surface (20) of the workpiece stack-up (10, 10?) and along a beam travel pattern (66) to form a laser weld joint (64) that fusion welds the metal workpieces (12, 150, 14) together. While the beam spot (44) is being advanced between a first point (76) and a second point (78) of one or more weld paths (74) of the beam travel pattern (66), the position of a focal point (52) of the laser beam (24) is oscillated relative to the top surface (20) of the workpiece N stack-up (10, 10?) along a dimension (68) oriented transverse to the top surface (20).

Abstract: A multilayer steel includes a core formed of transformation-induced plasticity (TRIP) steel. A decarburized layer is exterior to the core on at least one side thereof. The decarburized layer has reduced carbon content relative to the core. A zinc-based layer is exterior to the decarburized layer. The decarburized layer may have a composition of at least 80 percent ferrite, such that LME is reduced or mitigated. In some configurations, the decarburized layer is between 10-50 microns thick. A method of creating a coated advanced high-strength steel component is also provided. An apparatus for forming a coated advanced high-strength steel is also provided. The core of the multilayer steel may have a carbon weight-percent of less than or equal to 0.4. The decarburized layer of the multilayer steel may have a carbon weight-percent of less than or equal to 50 percent of the carbon weight-percent of the core.

Abstract: A semiconductor device such as a fin field effect transistor and its method of manufacture are provided. In some embodiments gate spacers are formed over a semiconductor fin, and a first gate stack is formed over the fin. A first sacrificial material with a large selectivity to the gate spacers is formed over the gate stack, and a second sacrificial material with a large selectivity is formed over a source/drain contact plug. Etching processes are utilized to form openings through the first sacrificial material and through the second sacrificial material, and the openings are filled with a conductive material.

Abstract: A method is provided. A sacrificial layer is formed over a semiconductor substrate. An etching process is performed to form an opening in the sacrificial layer. The etching process includes a first cycle and a second cycle performed after the first cycle, and each of the first cycle and the second cycle includes applying a passivation gas and an etchant gas over the sacrificial layer, and performing an ionized gas bombardment on the sacrificial layer after applying the passivation gas and the etchant gas over the sacrificial layer. The passivation gas is applied at a first flow rate in the first cycle and is applied at a second flow rate in the second cycle, and the first flow rate is higher than the second flow rate.

Abstract: An antenna array and a system including the antenna array are provided for implementing wireless communication in a wearable device. The antenna array includes a first plurality of antennas integrated with an antenna substrate and a second plurality of antennas integrated with the antenna substrate. Each antenna in the first plurality of antennas is disposed perpendicular to a ground plane, and each antenna in the second plurality of antennas is disposed parallel to the ground plane. The first plurality of antennas and the second plurality of antennas generate omni-directional electro-magnetic (EM) radiation in at least two different polarizations, which makes the antenna array suitable for wearable applications.

Abstract: In some embodiments, a semiconductor device is provided. The semiconductor device includes a first semiconductor fin that extends from a substrate. The first semiconductor fin has source and drain regions, which are separated from one another by a channel region in the first semiconductor fin. A gate overlies an upper surface and sidewalls of the channel region. A contact is coupled to the source or drain region of the first semiconductor fin, where the source or drain region includes a layer of epitaxial material with a substantially diamond-shaped cross-section. The contact surrounds the source or drain region on top and bottom surfaces of the substantially diamond-shaped cross-section. A first capping material is arranged along outer sidewalls of the first semiconductor fin under the contact. The first capping material has an uppermost surface that is spaced below a lowermost surface of the contact by a non-zero distance.