Abstract: A method for forming a semiconductor device structure is provided. The semiconductor device includes forming nanowire structures stacked over a substrate and spaced apart from one another, and forming a dielectric material surrounding the nanowire structures. The dielectric material has a first nitrogen concentration. The method also includes treating the dielectric material to form a treated portion. The treated portion of the dielectric material has a second nitrogen concentration that is greater than the first nitrogen concentration. The method also includes removing the treating portion of the dielectric material, thereby remaining an untreated portion of the dielectric material as inner spacer layers; and forming the gate stack surrounding nanowire structures and between the inner spacer layers.

Abstract: Traffic accident prediction systems and methods are provided. The traffic accident prediction systems and methods include an accident prediction model that utilizes a spatiotemporal attention-based multi-graph convolution neural network to predict the number of traffic accidents in a predetermined region over a predetermined period of time in order to assist with the efficient dispatch of public safety resources to respond to traffic accidents.

Abstract: A method for forming a semiconductor structure includes forming a fin on a semiconductor substrate. The fin includes channel layers and sacrificial layers stacked one on top of the other in an alternating fashion. The method also includes removing a portion of the fin to form a first opening and expose vertical sidewalls of the channel layers and the sacrificial layers, epitaxially growing a source/drain feature in the first opening from the exposed vertical sidewalls of the channel layers and the sacrificial layers, removing another portion of the fin to form a second opening to expose a vertical sidewall of the source/drain feature, depositing a dielectric layer in the second opening to cover the exposed vertical sidewall of the source/drain feature, and replacing the sacrificial layers with a metal gate structure in the second opening. The dielectric layer separates the source/drain feature from contacting the metal gate structure.

Abstract: Tamper-proof gateways are described. A gateway comprises a date intake module, a data transmission module, a tamper switch and a controller. The data intake module couples to one or more data generation devices. The data transmission module is configured to transmit sense information generated by the one or more data generation devices to a network. The tamper switch is configured to generate an alert signal in response to sensing tampering of the tamper-proof gateway. The controller is configured to: 1) place the tamper-proof gateway in a secure state in response to receiving the alert signal from the tamper switch, and 2) withdraw the tamper-proof gateway from the secure state in response to receiving authentication information. Withdrawing the gateway from the secure state may comprise placing the tamper-proof gateway in a first privileged state or a second privileged state.

Abstract: A semiconductor device structure is provided. The semiconductor device includes a first nanowire structure over a second nanowire structure, a gate stack wrapping around the first nanowire structure and the second nanowire structure, a source/drain feature adjoining the first nanowire structure and the second nanowire structure, a gate spacer layer over the first nanowire structure and between the gate stack and the source/drain feature, and an inner spacer layer between the first nanowire structure and the second nanowire structure and between the gate stack and the source/drain feature. The gate spacer layer has a first carbon concentration, the inner spacer has a second carbon concentration, and the second carbon concentration is lower than the first carbon concentration.

Abstract: A method for fabricating an integrated circuit device is provided. The method includes forming a transistor device over a front side of the semiconductor substrate; forming a first contact feature in the semiconductor substrate, wherein the first contact feature is connected with a back side of a first source/drain feature of the transistor device; and forming a memory structure over a back side of the first contact feature facing away from the first source/drain feature.

Abstract: A method for generating an extreme ultraviolet (EUV) radiation includes simultaneously irradiating two or more target droplets with laser light in an EUV radiation source apparatus to produce EUV radiation and collecting and directing the EUV radiation produced from the two or more target droplet by an imaging mirror.

Abstract: The structure of a semiconductor device with negative capacitance (NC) dielectric structures and a method of fabricating the semiconductor device are disclosed. A method of fabricating the semiconductor device includes forming a fin structure with a fin base portion and a fin top portion on a substrate, forming a spacer structure in a first region of the fin top portion, and forming a gate structure on a second region of the fin top portion. The spacer structure includes a first NC dielectric material and the gate structure includes a gate dielectric layer with a second NC dielectric material different from the first NC dielectric material.

Abstract: The present disclosure relates to an ion beam etching (IBE) system including a process chamber. The process chamber includes a plasma chamber configured to provide plasma. In addition, the process chamber includes an accelerator grid having multiple accelerator grid elements including a first accelerator grid element and a second accelerator grid element. A first wire is coupled to the first accelerator grid element and configured to supply a first voltage to the first accelerator grid element. A second wire is coupled to the second accelerator grid element and configured to supply a second voltage to the second accelerator grid element, where the second voltage is different from the first voltage. A first ion beam through a first hole is controlled by the first accelerator grid element, and a second ion beam through a second hole is controlled by the second accelerator grid element.

Abstract: A semiconductor structure includes a semiconductor substrate, a metal layer, an interlayer dielectric (ILD) layer. The metal layer is disposed over the semiconductor substrate. The ILD layer is over the semiconductor substrate and laterally surrounding the metal layer, in which the ILD layer has a first portion in contact with a first sidewall of the metal layer and a second portion in contact with a second sidewall of the metal layer opposite to the first sidewall of the metal layer, and a width of the first portion of the ILD layer decreases as a distance from the semiconductor substrate increases.

Abstract: A semiconductor device with different configurations of nanostructured channel regions and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a fin structure disposed on a substrate, a stack of nanostructured horizontal channel (NHC) regions disposed on the fin structure, a nanostructured vertical channel (NVC) region disposed within the stack of NHC regions, a source/drain (S/D) region disposed on the fin structure, and a gate structure disposed on the NHC regions and on portions of the NVC region that are not covered by the NHC regions and the fin structure.

Abstract: A semiconductor device with different configurations of gate structures and a method of fabricating the semiconductor device are disclosed. The semiconductor device includes a stack of nanostructured channel regions disposed on a fin structure, a first gate structure disposed within the stack of nanostructured channel regions, a second gate structure surrounds the first gate structure about a first axis and surrounds the nanostructured channel regions about a second axis different from the first axis, and first and second contact structures disposed on the first and second gate structures, respectively.

Abstract: A temperature-controlled massage node that imparts either or both a heating or cooling effects is provided, which may be attached to a massager to impart a heating or cooling effect on a user with a massage effect, or optionally, without a massage effect. The temperature-controlled massage node may be affixed to the massager or may be removably coupled. The temperature-controlled massage node may be powered by the same power source as the massager or may include an independent power source located, for example, in the massage node. The massage node may be used with a massager that provides percussive massage effects, such as a massage gun, or may be used with a vibrating massager. Optionally, the massage node may include independent power, a controller and a motor to supply both a vibrating massage effect and hot and cold effect, either alone or in combination.

Abstract: A temperature-controlled massage node that imparts either or both a heating or cooling effects is provided, which may be attached to a massager to impart a heating or cooling effect on a user with a massage effect, or optionally, without a massage effect. The temperature-controlled massage node may be affixed to the massager or may be removably coupled. The temperature-controlled massage node may be powered by the same power source as the massager or may include an independent power source located, for example, in the massage node. The massage node may be used with a massager that provides percussive massage effects, such as a massage gun, or may be used with a vibrating massager. Optionally, the massage node may include independent power, a controller and a motor to supply both a vibrating massage effect and hot and cold effect, either alone or in combination.

Abstract: The present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.

Abstract: A temperature-controlled massage node that imparts either or both a heating or cooling effects is provided, which may be attached to a massager to impart a heating or cooling effect on a user with a massage effect, or optionally, without a massage effect. The temperature-controlled massage node may be affixed to the massager or may be removably coupled. The temperature-controlled massage node may be powered by the same power source as the massager or may include an independent power source located, for example, in the massage node. The massage node may be used with a massager that provides percussive massage effects, such as a massage gun, or may be used with a vibrating massager. Optionally, the massage node may include independent power, a controller and a motor to supply both a vibrating massage effect and hot and cold effect, either alone or in combination.

Abstract: The present disclosure describes a semiconductor device includes a first fin structure, an isolation structure in contact with a top surface of the first fin structure, a substrate layer in contact with the isolation structure, an epitaxial layer in contact with the isolation structure and the substrate layer, and a second fin structure above the first fin structure and in contact with the epitaxial layer.

Abstract: The present disclosure describes a method includes forming a fin structure including a fin base portion and a stacked fin portion on a substrate. The stacked fin portion includes a first semiconductor layer on the fin base portion, a second semiconductor layer above the first semiconductor layer, and a sacrificial semiconductor layer between the first and second semiconductor layers. The method further includes replacing the sacrificial semiconductor layer with a negative capacitance (NC) layer and forming gate electrodes around the NC layer, the first semiconductor layer, and the second semiconductor layer. The NC layer includes an NC dielectric material.

Abstract: A method of laser welding together two or more overlapping metal workpieces (12, 14, or 12, 150, 14) included in a welding region (16) of a workpiece stack-up (10) involves advancing a beam spot (44) of a laser beam (24) relative to a top surface (20) of the workpiece stack-up along a first weld path (72) in a first direction (74) to form an elongated melt puddle (76) and, then, advancing the beam spot (44) of the laser beam (24) along a second weld path (78) in a second direction (80) that is opposite of the first direction while the elongated melt puddle is still in a molten state. The first weld path and the second weld path overlap so that the beam spot of the laser beam is conveyed through the elongated melt puddle when the beam spot is advanced along the second weld path.

Abstract: The present disclosure relates to an ion beam etching (IBE) system including a plasma chamber configured to provide plasma, a screen grid, an extraction grid, an accelerator grid, and a decelerator grid. The screen grid receives a screen grid voltage to extract ions from the plasma within the plasma chamber to form an ion beam through a hole. The extraction grid receives an extraction grid voltage, where a voltage difference between the screen grid voltage and the extraction grid voltage determines an ion current density of the ion beam. The accelerator grid receives an accelerator grid voltage. A voltage difference between the extraction grid voltage and the accelerator grid voltage determines an ion beam energy for the ion beam. The IBE system can further includes a deflector system having a first deflector plate and a second deflector plate around a hole to control the direction of the ion beam.