Patents by Inventor Davide Chiola

Davide Chiola has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20050161759
    Abstract: A Merged P-i-N Schottky device in which the oppositely doped diffusions extend to a depth and have been spaced apart such that the device is capable of absorbing a reverse avalanche energy comparable to a Fast Recovery Epitaxial Diode having a comparatively deeper oppositely doped diffusion region.
    Type: Application
    Filed: January 27, 2004
    Publication date: July 28, 2005
    Inventors: Davide Chiola, Kohji Andoh, Silvestro Fimiani
  • Publication number: 20050161758
    Abstract: A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.
    Type: Application
    Filed: January 27, 2004
    Publication date: July 28, 2005
    Inventor: Davide Chiola
  • Publication number: 20050127465
    Abstract: A fabrication process for a trench Schottky diode with differential oxide thickness within the trenches includes forming a first nitride layer on a substrate surface and subsequently forming a plurality of trenches in the substrate including, possibly, a termination trench. Following a sacrificial oxide layer formation and removal, sidewall and bottom surfaces of the trenches are oxidized. A second nitride layer is then applied to the substrate and etched such that the second nitride layer covers the oxide layer on the trench sidewalls but exposes the oxide layer on the trench bottom surfaces. The trench bottom surfaces are then re-oxidized and the remaining second nitride layer then removed from the sidewalls, resulting in an oxide layer of varying thickness being formed on the sidewall and bottom surfaces of each trench. The trenches are then filled with a P type polysilicon, the first nitride layer removed, and a Schottky barrier metal applied to the substrate surface.
    Type: Application
    Filed: January 14, 2005
    Publication date: June 16, 2005
    Inventor: Davide Chiola
  • Publication number: 20050124085
    Abstract: A method for adjusting the resistivity in the surface of a semiconductive substrate including selective measurement and counter-doping of areas on a major surface of a semiconductive substrate.
    Type: Application
    Filed: December 4, 2003
    Publication date: June 9, 2005
    Inventors: Kohji Andoh, Davide Chiola
  • Publication number: 20050062124
    Abstract: A schottky diode of the trench variety which includes a trench termination having a thick insulation layer that is thicker than the insulation layer inside the trenches in its active region.
    Type: Application
    Filed: September 8, 2004
    Publication date: March 24, 2005
    Inventor: Davide Chiola
  • Patent number: 6855593
    Abstract: A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.
    Type: Grant
    Filed: July 11, 2002
    Date of Patent: February 15, 2005
    Assignee: International Rectifier Corporation
    Inventors: Kohji Andoh, Davide Chiola
  • Publication number: 20050029585
    Abstract: A semiconductor device including a schottky device and a trench type semiconductor switching device such as a MOSFET formed in a common die.
    Type: Application
    Filed: August 4, 2003
    Publication date: February 10, 2005
    Inventors: Donald He, Ritu Sodhi, Davide Chiola
  • Patent number: 6846729
    Abstract: A Schottky diode is adjusted by implanting an implant species by way of a titanium silicide Schottky contact and driving the implant species into the underlying silicon substrate by a rapid anneal. The implant is at a low energy, (e.g. about 10 keV) and at a low dose (e.g. less than about 9E12 atoms per cm2) such that the barrier height is slightly increased and the leakage current reduced without forming pn junction and retaining the peak boron concentration in the titanium silicide layer.
    Type: Grant
    Filed: September 25, 2002
    Date of Patent: January 25, 2005
    Assignee: International Rectifier Corporation
    Inventors: Kohji Andoh, Davide Chiola, Daniel M. Kinzer
  • Publication number: 20050009255
    Abstract: The gate oxide in the trenches of a trench type Schottky device are formed by oxidizing a layer of polysilicon deposited in trenches of a silicon or silicon carbide substrate. A small amount of the substrate is also oxidized to create a good interface between the substrate and the oxide layer which is formed. The corners of the trench are rounded by the initial formation and removal of a sacrificial oxide layer.
    Type: Application
    Filed: July 6, 2004
    Publication date: January 13, 2005
    Inventors: Davide Chiola, Zhi He
  • Publication number: 20040222430
    Abstract: A temperature-sensing diode has an anode and a cathode disposed on top and an isolated, metallization layer on bottom of a diode die. For example, the temperature-sensing diode is a Schottky diode without a guard ring and any passivation, making the temperature-sensing diode inexpensive to fabricate, easy to attach in close proximity to a heat-generating device and resistant to electronic noise from high power devices and stray electronic signals. The location of the anode and cathode on the same surface of the diode package provides for easy connection, such as by wire bonds, with an external circuit for providing a constant forward bias current and for amplification of the output voltage signal by an operational amplifier. The isolated, metallization layer provides for easy attachment of the temperature- sensing diode in close proximity to heat-generating power devices. A dielectric film isolates the temperature-sensing diode from the metallization layer and underlying substrate.
    Type: Application
    Filed: February 3, 2004
    Publication date: November 11, 2004
    Applicant: International Rectifier Corporation
    Inventors: Fabio Necco, Davide Chiola, Kohji Andoh
  • Publication number: 20040077305
    Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
    Type: Application
    Filed: August 18, 2003
    Publication date: April 22, 2004
    Applicant: International Rectifier Corporation
    Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Ruo Redda, Davide Chiola
  • Publication number: 20040007723
    Abstract: A fabrication process for a Schottky barrier structure includes forming a nitride layer directly on a surface of an epitaxial (“epi”) layer and subsequently forming a plurality of trenches in the epi layer. The interior walls of the trenches are then deposited with a final oxide layer without forming a sacrificial oxide layer to avoid formation of a beak bird at the tops of the interior trench walls. A termination trench is etched in the same process step for forming the plurality of trenches in the active area.
    Type: Application
    Filed: July 11, 2002
    Publication date: January 15, 2004
    Applicant: International Rectifier Corp.
    Inventors: Kohji Andoh, Davide Chiola
  • Publication number: 20030062585
    Abstract: A Schottky diode has a barrier height which is adjusted by boron implant through a titanium silicide Schottky contact and into the underlying N− silicon substrate which receives the titanium silicide contact. The implant is a low energy, of about 10 keV (non critical) and a low dose of less than about 1E12 atoms per cm2 (non-critical).
    Type: Application
    Filed: September 25, 2002
    Publication date: April 3, 2003
    Applicant: International Rectifier Corp.
    Inventors: Kohji Andoh, Davide Chiola, Daniel M. Kinzer
  • Publication number: 20020195613
    Abstract: A fast recovery diode has a single large area P/N junction surrounded by a termination region. The anode contact in contact with the central active area extends over the inner periphery of an oxide termination ring and an EQR metal ring extends over the outer periphery of the oxide termination ring. Platinum atoms are diffused into the back surface of the device. A three mask process is described. An amorphous silicon layer is added in a four mask process, and a plurality of spaced guard rings are added in a five mask process.
    Type: Application
    Filed: April 2, 2002
    Publication date: December 26, 2002
    Applicant: International Rectifier Corp.
    Inventors: Kohji Andoh, Silvestro Fimiani, Fabrizio Rue Redda, Davide Chiola