Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: A method for determining a segmentation threshold of a digital image of a rock-soil material is disclosed. The method comprises the following steps: S1: acquiring a gray-level histogram curve of an SEM image of the rock-soil material; S2: determining a value range of a segmentation threshold T according to the gray-level histogram curve; S3: acquiring second derivatives of the gray-level histogram curve; and S4: determining the segmentation threshold T according to the second derivatives of the gray-level histogram curve and the value range of the segmentation threshold T. The present invention can rapidly and accurately determine the segmentation threshold of the digital image of the rock-soil material, and accurately distinguish a pore or fissure structure from a surface soil skeleton structure of the rock-soil material in the digital image.

Abstract: The present disclosure discloses a rock high-stress high-temperature micro-nano indentation test system, comprising: an X, Y, Z three-direction macroscopic adjustment module, an indentation precision loading module, an indentation test module and an indentation data processing module. The rock high-stress high-temperature micro-nano indentation test system further comprise a two-dimensional horizontal stress loading device, a temperature control device and a vacuum device 13. The rock high-stress high-temperature micro-nano indentation test system provided by the present disclosure has distinctive features of modularity and structuralization, and its test results have high accuracy. The rock high-stress high-temperature micro-nano indentation test system is easy to operate, and provides a theoretical and technical system support for testing the mechanical characteristics of the rock under the high-stress and high-temperature environment in the deep region.

Abstract: Disclosed a combined rock-breaking TBM tunneling method in complex strata for realizing three-way force detection, comprising the steps of preparing a combined mechanical-hydraulic rock-breaking cutter head for TBM construction; starting construction; advancing the combined mechanical-hydraulic rock-breaking cutter head; pushing and pressing against a tunnel face by a mechanical cutter tool; subjecting a three-way force detection cutter to squeezing forces; feeding back three-way force data by a three-way force sensor; processing information by a TBM back-end control processor; obtaining a value of rock-cutter contact angle ?; feeding back parameter information to a TBM cutter head control center by a lithology index center; responding by the TBM cutter head control center, obtaining and adjusting parameters by the mechanical cutter tool equipped with the three-way force sensor; and breaking rock by the combined mechanical-hydraulic rock-breaking cutter head.

Abstract: Methods and systems for estimating values of parameters of interest from optical measurements of a sample early in a production flow based on a multidimensional optical dispersion (MDOD) model are presented herein. An MDOD model describes optical dispersion of materials comprising a structure under measurement in terms of parameters external to a base optical dispersion model. In some examples, a power law model describes the physical relationship between the external parameters and a parameter of the base optical dispersion model. In some embodiments, one or more external parameters are treated as unknown values that are resolved based on spectral measurement data. In some embodiments, one or more external parameters are treated as known values, and values of base optical dispersion model parameters, one or more external parameters having unknown values, or both, are resolved based on spectral measurement data and the known values of the one or more external parameters.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods and systems for measuring optical properties of transistor channel structures and linking the optical properties to the state of strain are presented herein. Optical scatterometry measurements of strain are performed on metrology targets that closely mimic partially manufactured, real device structures. In one aspect, optical scatterometry is employed to measure uniaxial strain in a semiconductor channel based on differences in measured spectra along and across the semiconductor channel. In a further aspect, the effect of strain on measured spectra is decorrelated from other contributors, such as the geometry and material properties of structures captured in the measurement. In another aspect, measurements are performed on a metrology target pair including a strained metrology target and a corresponding unstrained metrology target to resolve the geometry of the metrology target under measurement and to provide a reference for the estimation of the absolute value of strain.

Abstract: A ring shear and seepage-coupled apparatus and a ring shear and seepage-coupled test system for rock and rock fracture under tension or compression stress are provided, relating to the technical field of mechanical testing devices. As to the ring shear and seepage-coupled apparatus, an axial piston rod is connected with an upper shear box, a torque transferring shaft is connected with a lower shear box, an axial force transducer is provided on the axial piston rod, a torque transducer is provided on the torque transmitting shaft, and a force transferring plate is fixedly connected onto the upper shear box. The force transferring plate is able to transmit a counter force for exerting a torque. Radial and circumferential seepage tests can be achieved by providing a seepage structure. The ring shear and seepage-coupled test system comprises a servo pump and the ring shear and seepage-coupled apparatus as mentioned above.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: Methods of precisely analyzing and modeling band gap energies and electrical properties of a thin film are provided. One method includes: obtaining a substrate and a thin film disposed above the substrate, the thin film including an interfacial layer above the substrate, and a high-k layer above the interfacial layer; determining a thickness of the thin film; analyzing the thin film using deep ultraviolet spectroscopy ellipsometry to determine the photon energy of reflected light; using a model to determine a set of bandgap energies extracted from a set of results of the photon energy of the analyzing step; and determining at least one of: a leakage current from a main bandgap energy, a nitrogen content from a sub bandgap energy, and an equivalent oxide thickness from the nitrogen content and a composition of the interfacial layer.

Abstract: A parameterized geometric model of a structure can be determined based on spectra from a wafer metrology tool. The structure can have geometry-induced anisotropic effects. Dispersion parameters of the structure can be determined from the parameterized geometric model. This can enable metrology techniques to measure nanostructures that have geometries and relative positions with surrounding structures that induce non-negligible anisotropic effects. These techniques can be used to characterize process steps involving metal and semiconductor targets in semiconductor manufacturing of, for example, FinFETs or and gate-all-around field-effect transistors.

Abstract: A spectroscopic metrology system includes a spectroscopic metrology tool and a controller. The controller generates a model of a multilayer grating including two or more layers, the model including geometric parameters indicative of a geometry of a test layer of the multilayer grating and dispersion parameters indicative of a dispersion of the test layer. The controller further receives a spectroscopic signal of a fabricated multilayer grating corresponding to the modeled multilayer grating from the spectroscopic metrology tool. The controller further determines values of the one or more parameters of the modeled multilayer grating providing a simulated spectroscopic signal corresponding to the measured spectroscopic signal within a selected tolerance. The controller further predicts a bandgap of the test layer of the fabricated multilayer grating based on the determined values of the one or more parameters of the test layer of the fabricated structure.

Abstract: A ring shear and seepage-coupled apparatus and a ring shear and seepage-coupled test system for rock and rock fracture under tension or compression stress are provided, relating to the technical field of mechanical testing devices. As to the ring shear and seepage-coupled apparatus, an axial piston rod is connected with an upper shear box, a torque transferring shaft is connected with a lower shear box, an axial force transducer is provided on the axial piston rod, a torque transducer is provided on the torque transmitting shaft, and a force transferring plate is fixedly connected onto the upper shear box. The force transferring plate is able to transmit a counter force for exerting a torque. Radial and circumferential seepage tests can be achieved by providing a seepage structure. The ring shear and seepage-coupled test system comprises a servo pump and the ring shear and seepage-coupled apparatus as mentioned above.

Abstract: The present invention belongs to the technical field of rock mechanics testing equipment, and discloses a rock hollow cylinder torsional shear apparatus which includes a frame, a lifting device, a bottom seat, a confining pressure barrel, an upper seat, a force transmission shaft, a force transmission shaft holder, a torque application structure and a controller. The present invention provides a torsional shear apparatus capable of avoiding mutual interference between axial force application and torque force application.

Abstract: The present invention belongs to the technical field of rock mechanics testing equipment, and discloses a rock hollow cylinder torsional shear apparatus which includes a frame, a lifting device, a bottom seat, a confining pressure barrel, an upper seat, a force transmission shaft, a force transmission shaft holder, a torque application structure and a controller. The present invention provides a torsional shear apparatus capable of avoiding mutual interference between axial force application and torque force application.

Abstract: The present invention relates to a catalyst combination for hydrotreating raw oils and a process for hydrotreating raw oils with the catalyst combination. The catalyst combination comprises one or both of at least one hydrogenation protection catalyst I and at least one hydrogenation demetalling catalyst I; at least one hydrogenation demetalling catalyst II; and at least one hydrogenation treatment catalyst III.

Abstract: Methods and systems for determining band structure characteristics of high-k dielectric films deposited over a substrate based on spectral response data are presented. High throughput spectrometers are utilized to quickly measure semiconductor wafers early in the manufacturing process. Optical models of semiconductor structures capable of accurate characterization of defects in high-K dielectric layers and embedded nanostructures are presented. In one example, the optical dispersion model includes a continuous Cody-Lorentz model having continuous first derivatives that is sensitive to a band gap of a layer of the unfinished, multi-layer semiconductor wafer. These models quickly and accurately represent experimental results in a physically meaningful manner. The model parameter values can be subsequently used to gain insight and control over a manufacturing process.

Abstract: The present invention relates to a catalyst combination for hydrotreating raw oils and a process for hydrotreating raw oils with the catalyst combination. The catalyst combination comprises one or both of at least one hydrogenation protection catalyst I and at least one hydrogenation demetalling catalyst I; at least one hydrogenation demetalling catalyst II; and at least one hydrogenation treatment catalyst III.

Abstract: A gamma titanium aluminide alloy consisting of 46 at % aluminium, 8 at % tantalum and the balance titanium plus incidental impurities has an alpha transus temperature T? between 1310° C. and 1320° C. The gamma titanium aluminide alloy was heated to a temperature T1=1330° C. and was held at T1=1330° C. for 1 hour or longer. The gamma titanium aluminide alloy was air cooled to ambient temperature to allow the massive transformation to go to completion. The gamma titanium aluminide alloy was heated to a temperature T2=1250° C. to 1290° C. and was held at T2 for 4 hours. The gamma titanium aluminide alloy was air cooled to ambient temperature. The gamma titanium aluminide alloy has a fine duplex microstructure comprising differently orientated alpha plates in a massively transformed gamma matrix. The heat treatment reduces quenching stresses and allows larger castings to be grain refined.