Patents by Inventor Dawn V. Muyres
Dawn V. Muyres has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11907447Abstract: A polymeric film including a major surface having a plurality of intersecting extended structures is described. For at least a majority of the structures in the plurality of extended structures: each structure extends along a length of the structure, has an average width along a direction transverse to the length and generally along the first major surface, and has an average height along a direction generally perpendicular to the first major surface; and the average width of the structure may be in a range of 1 to 200 micrometers, the average height of the structure may be in a range of 1 to 200 micrometers, and the length may be at least 3 times the average width. The extended structures may be randomly or pseudorandomly oriented and may be formed by microreplicating a surface of a paper.Type: GrantFiled: December 6, 2019Date of Patent: February 20, 2024Assignee: 3M INNOVATIVE PROPERTIES COMPANYInventors: Brett J. Sitter, Dawn V. Muyres, Jonathan T. Kahl, Vivian W. Jones, Owen M. Anderson, Gordan A. Kuhnley, Joshua J. Loga, Erin A. McDowell
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Publication number: 20220226161Abstract: Medical dressings including stiffening systems fixedly attached to backing layers are described herein along with methods of using the medical dressings. The stiffening system is fixedly secured to the backing to limit flexing and stretching of the backing layer. Typically, the medical dressing and stiffening system is applied over a medical device that is secured to skin. The stiffening system covers some of the medical device and also extends beyond the medical device. The stiffening system stabilizes the medical device over the skin.Type: ApplicationFiled: June 1, 2020Publication date: July 21, 2022Inventors: Audrey A. Sherman, Thomas R.J. Corrigan, Dawn V. Muyres, Silvia G.B. Guttmann, Anne C.F. Gold, Michael R. Plumb, Todd M. Fruchterman, Alex S. Plasencia, Donald G. Peterson, Krystal J. Scheibel, Zachary M. Ingram, Guido Hitschmann
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Publication number: 20220035464Abstract: A polymeric film including a major surface having a plurality of intersecting extended structures is described. For at least a majority of the structures in the plurality of extended structures: each structure extends along a length of the structure, has an average width along a direction transverse to the length and generally along the first major surface, and has an average height along a direction generally perpendicular to the first major surface; and the average width of the structure may be in a range of 1 to 200 micrometers, the average height of the structure may be in a range of 1 to 200 micrometers, and the length may be at least 3 times the average width. The extended structures may be randomly or pseudorandomly oriented and may be formed by microreplicating a surface of a paper.Type: ApplicationFiled: December 6, 2019Publication date: February 3, 2022Inventors: Brett J. Sitter, Dawn V. Muyres, Jonathan T. Kahl, Vivian W. Jones, Owen M. Anderson, Gordan A. Kuhnley, Joshua J. Loga, Erin A. McDowell
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Patent number: 7473652Abstract: Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.Type: GrantFiled: June 30, 2006Date of Patent: January 6, 2009Assignee: 3M Innovative Properties CompanyInventors: Feng Bai, Todd D. Jones, Kevin M. Lewandowski, Tzu-Chen Lee, Dawn V. Muyres, Tommie W. Kelley
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Patent number: 7352000Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.Type: GrantFiled: September 15, 2005Date of Patent: April 1, 2008Assignee: 3M Innovative Properties CompanyInventors: Tommie W. Kelley, Larry D. Boardman, Timothy D. Dunbar, Todd D. Jones, Dawn V. Muyres, Mark J. Pellerite, Terrance P. Smith
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Patent number: 7352038Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.Type: GrantFiled: September 15, 2005Date of Patent: April 1, 2008Assignee: 3M Innovative Properties CompanyInventors: Tommie W. Kelley, Larry D. Boardman, Timothy D. Dunbar, Todd D. Jones, Dawn V. Muyres, Mark J. Pellerite, Terrance P. Smith
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Patent number: 7297361Abstract: A method for circuit fabrication includes positioning first and second webs of film in proximity to each other, wherein the second web of film defines a deposition mask, and deposition material on the first web of film through the deposition mask pattern defined by the second web of the to create at least a portion of an integrated circuit.Type: GrantFiled: September 14, 2004Date of Patent: November 20, 2007Assignee: 3M Innovative Properties CompanyInventors: Paul F. Baude, Patrick R. Fleming, Michael A. Haase, Tommie W. Kelley, Dawn V. Muyres, Steven Theiss
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Publication number: 20070241558Abstract: A pipe system includes first and second pipes having first and second ends welded together forming a girth-weld and a corrosion coating covering the girth-weld. In addition, a flexible sheet is provided to cover the girth-weld. The flexible sheet comprises a first structured layer that mechanically couples to the corrosion coating, where the corrosion coating permeates a substantial portion of the first structured layer. The flexible sheet also includes a second layer comprising a polymer layer adhered to the first layer, the second layer protecting the corrosion coating from mechanical or environmental damage. Alternatively, the protective cover comprises a polymer material and includes a port formed therethrough adapted to receive a delivery mechanism that delivers a corrosion coating to the girth-weld.Type: ApplicationFiled: April 9, 2007Publication date: October 18, 2007Inventors: Mark K. Nestegard, Mark T. Anderson, Dawn V. Muyres, Mario A. Perez
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Publication number: 20070240780Abstract: A pipe includes an outer surface with a polyolefin-based protective coating covering a substantial portion thereof In addition, an end wrap material is disposed on the protective coating proximate to an end of the pipe, where the end wrap material is bondable to a polymer-containing protective material, such as a heat shrink sleeve or cover. The end wrap material can bond a heat shrink cover or sleeve in place over a girth-weld, thus substantially reducing the likelihood of the disbandment or movement of the sleeve from the welded pipe ends over time.Type: ApplicationFiled: April 9, 2007Publication date: October 18, 2007Inventors: Mark K. Nestegard, Mark T. Anderson, Dawn V. Muyres, Mario A. Perez
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Publication number: 20070240816Abstract: A pipe system comprises first and second pipes having first and second ends welded together forming a girth-weld and a heat recoverable polymer material comprising a plurality of holes extending therethrough covering the girth-weld. The heat recoverable polymer material can include a surface having an adhesive coated thereon disposed on the girth-weld. Air trapped underneath the recoverable polymer material can be released through the plurality of holes during shrinking of the heat recoverable polymer material. Also, a portion of the adhesive can flow through the holes during a shrinking of the heat recoverable polymer material.Type: ApplicationFiled: April 9, 2007Publication date: October 18, 2007Inventors: Mark K. Nestegard, Mark T. Anderson, Dawn V. Muyres, Mario A. Perez
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Patent number: 7279777Abstract: Organic polymers for use in laminates including capacitors, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4.Type: GrantFiled: May 5, 2004Date of Patent: October 9, 2007Assignee: 3M Innovative Properties CompanyInventors: Feng Bai, Todd D. Jones, Kevin M. Lewandowski, Tzu-Chen Lee, Dawn V. Muyres, Tommie W. Kelley
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Patent number: 7241688Abstract: Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays and low-cost integrated circuits such as radio frequency identification (RFID) circuits. In addition, the techniques can be advantageous in the fabrication of integrated circuits incorporating organic semiconductors, which typically are not compatible with wet processes.Type: GrantFiled: April 29, 2005Date of Patent: July 10, 2007Assignee: 3M Innovative Properties CompanyInventors: Paul F. Baude, Patrick R. Fleming, Michael A. Haase, Tommie W. Kelley, Dawn V. Muyres, Steven Theiss
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Patent number: 7098525Abstract: Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0–3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.Type: GrantFiled: May 8, 2003Date of Patent: August 29, 2006Assignee: 3M Innovative Properties CompanyInventors: Feng Bai, Todd D. Jones, Kevin M. Lewandowski, Tzu-Chen Lee, Dawn V. Muyres, Tommie W. Kelley
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Patent number: 6946676Abstract: Provided is an organic thin film transistor comprising a polymeric layer interposed between a gate dielectric and an organic semiconductor layer. Various homopolymers, copolymers, and functional copolymers are taught for use in the polymeric layer. An integrated circuit comprising a multiplicity of thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.Type: GrantFiled: November 5, 2001Date of Patent: September 20, 2005Assignee: 3M Innovative Properties CompanyInventors: Tommie W. Kelley, Larry D. Boardman, Timothy D. Dunbar, Todd D. Jones, Dawn V. Muyres, Mark J. Pellerite, Terrance P. Smith
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Patent number: 6897164Abstract: Aperture masks and deposition techniques for using aperture masks are described. In addition, techniques for creating aperture masks and other techniques for using the aperture masks are described. The various techniques can be particularly useful in creating circuit elements for electronic displays and low-cost integrated circuits such as radio frequency identification (RFID) circuits. In addition, the techniques can be advantageous in the fabrication of integrated circuits incorporating organic semiconductors, which typically are not compatible with wet processes.Type: GrantFiled: February 14, 2002Date of Patent: May 24, 2005Assignee: 3M Innovative Properties CompanyInventors: Paul F. Baude, Patrick R. Fleming, Michael A. Haase, Tommie W. Kelley, Dawn V. Muyres, Steven Theiss
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Patent number: 6821348Abstract: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.Type: GrantFiled: February 14, 2002Date of Patent: November 23, 2004Assignee: 3M Innovative Properties CompanyInventors: Paul F. Baude, Patrick R. Fleming, Michael A. Haase, Tommie W. Kelley, Dawn V. Muyres, Steven Theiss
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Publication number: 20040222412Abstract: Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: 1Type: ApplicationFiled: May 8, 2003Publication date: November 11, 2004Applicant: 3M Innovative Properties CompanyInventors: Feng Bai, Todd D. Jones, Kevin M. Lewandowski, Tzu-Chen Lee, Dawn V. Muyres, Tommie W. Kelley
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Patent number: 6768132Abstract: An organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors.Type: GrantFiled: March 7, 2002Date of Patent: July 27, 2004Assignee: 3M Innovative Properties CompanyInventors: Terrance P. Smith, Mark J. Pellerite, Tommie W. Kelley, Dawn V. Muyres, Dennis E. Vogel, Kim M. Vogel, Larry D. Boardman, Timothy D. Dunbar
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Publication number: 20030175551Abstract: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The semiconductor layer comprises a material selected from an acene, substituted with at least one electron-donating group, halogen atom, or a combination thereof, or a benzo-annellated acene or polybenzo-annellated acene, which optionally is substituted with at least one electron-donating group, halogen atom, or a combination thereof.Type: ApplicationFiled: March 7, 2002Publication date: September 18, 2003Inventors: Terrance P. Smith, Mark J. Pellerite, Tommie W. Kelley, Dawn V. Muyres, Dennis E. Vogel, Kim M. Vogel, Larry D. Boardman, Timothy D. Dunbar
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Patent number: 6617609Abstract: Provided is an organic thin film transistor comprising a siloxane polymeric layer interposed between a gate dielectric and an organic semiconductor layer. An integrated circuit comprising thin film transistors and methods of making a thin film transistor are also provided. The organic thin film transistors of the invention typically exhibit improvement in one or more transistor properties.Type: GrantFiled: November 5, 2001Date of Patent: September 9, 2003Assignee: 3M Innovative Properties CompanyInventors: Tommie W. Kelley, Larry D. Boardman, Timothy D. Dunbar, Todd D. Jones, Dawn V. Muyres, Mark J. Pellerite, Terrance P. Smith