Abstract: Embodiments provide a dielectric inter block disposed in a metallic region of a conductive line or source/drain contact. A first and second conductive structure over the metallic region may extend into the metallic region on either side of the inter block. The inter block can prevent etchant or cleaning solution from contacting an interface between the first conductive structure and the metallic region.

Abstract: In some embodiments, an electronic device present user interfaces for initializing a remote locator object. In some embodiments, an electronic device presents notifications when a remote locator object is separated from the user. In some embodiments, an electronic device presents notifications when an unknown remote locator object is tracking the user. In some embodiments, an electronic device presents a user interface for a short distance locator user interface for finding a remote locator object. In some embodiments, an electronic device presents user interfaces for finding a remote locator object using a map user interface or using a short distance locator user interface.

Abstract: In some embodiments, an electronic device presents user interfaces for defining identifiers for remote locator objects. In some embodiments, an electronic device locates a remote locator object. In some embodiments, an electronic device provides information associated with a remote locator object. In some embodiments, an electronic device displays notifications associated with a trackable device. In some embodiments, a first device generates alerts.

Abstract: A method and system for providing access to a resource. A request for an individual within an organization to access the resource is received. In response to the request having been received, at least one constraint for accessing the resource by the individual is ascertained, based on respective constraints for accessing the resource by one or more other individuals in the organization. The one or more other individuals have a same role in the organization as the individual or have a respective relationship with the individual. The at least one constraint is provided to the individual.

Abstract: Methods, systems, and devices for dynamic voltage supply for memory circuit are described. An apparatus may adjust a supply voltage based on a process corner and a temperature of the memory system. An apparatus may include a memory array and a controller. The controller may determine a first temperature of the apparatus is less than a first temperature threshold at a first time. The controller may transition a voltage supplied to the controller from a first voltage level to a second voltage level based on determining the first temperature is less than the first temperature threshold. The controller may determine a second temperature is greater than a second temperature threshold at a second time. The controller may transition the voltage supplied to the controller from the second voltage level to the first voltage level based on determining the second temperature is greater than the second temperature threshold.

Abstract: Improved conductive contacts, methods for forming the same, and semiconductor devices including the same are disclosed. In an embodiment, a semiconductor device includes a first interlayer dielectric (ILD) layer over a transistor structure; a first contact extending through the first ILD layer, the first contact being electrically coupled with a first source/drain region of the transistor structure, a top surface of the first contact being convex, and the top surface of the first contact being disposed below a top surface of the first ILD layer; a second ILD layer over the first ILD layer and the first contact; and a second contact extending through the second ILD layer, the second contact being electrically coupled with the first contact.

Abstract: An electronic device includes a gamma data source, a signal receiving circuit, a buffer circuit, a counter, a multiplexer, and a gamma processing unit. The signal receiving circuit receives source data, and correspondingly generates a grayscale value. The buffer circuit electrically couples the signal receiving circuit and stores the grayscale value. The counter receives a system clock signal to generate a sequence number. The multiplexer electrically couples the counter and the gamma data source. The multiplexer receives the sequence number. The multiplexer outputs a bit message corresponding to the sequence number in the gamma data source. The gamma processing unit electrically couples the multiplexer and the buffer circuit. The gamma processing unit receives the bit message from the multiplexer. The gamma processing unit receives the grayscale value from the buffer circuit. The gamma processing unit outputs a bit value corresponding to the grayscale value in the bit message.

Abstract: The present invention relates to a hydrophilic metal thin film, which is formed by stacking a plurality of columnar structures. A plurality of tetrahedral structures is on the surface of the hydrophilic metal film, which is formed on the top of the columnar structures. The width of the tetrahedral structures is 15 nm to 120 nm. The hydrophilic metal thin film comprises: 35 to 95 at % of iron, 5 to 20 at % of chromium. The above-mentioned hydrophilic metal thin film is formed by magnetron sputtering method under the working pressure of argon gas ranging from 6 mTorr to 13 mTorr, and the sputtering time exceeds 20 minutes.

Abstract: A nuclear emergency multifunctional operation robot includes a base, a mechanical arm, a tool change-over device, and motion supporting devices. The base includes a pedestal, a mounting seat A, a mounting seat B, a mounting seat C, a rotation driving mechanism A, and a rotation driving mechanism B. The front end of the mechanical arm is connected to the mounting seat B; the tool change-over device includes a male connector and a female connector which are abutted with or separated from each other; and the motion supporting devices are used to drive the nuclear emergency multifunctional operation robot to move. The present disclosure has the advantages that the base can be integrated with various end tools, so that the operation robot conveniently changes over tools according to operation needs to conduct various types of operations.

Abstract: Embodiments of the present invention relate to methods, systems, and computer program products for managing a plurality of live comments. A plurality of live comments is obtained for a video, the plurality of live comments being associated with a plurality of fragments in the video, respectively. A plurality of features are extracted from the plurality of live comments, respectively. A knowledge base is generated for the plurality of live comments based on the plurality of features. With these embodiments, the live comments may be managed in an effective way. Further, the knowledge base may provide answers to a user query.

Abstract: The present invention relates to a hydrogen storage alloy, an electrode for a Ni-MH battery, a secondary battery, and a method for preparing the hydrogen storage alloy. The chemical composition of the hydrogen storage alloy is expressed by the general formula La(3.0˜3.2)xCexZrySm(1-(4.11˜4.2)x-y)NizCouMnvAlw, where x, y, z, u, v, w are molar ratios, and 0.14?x?0.17, 0.02?y?0.03, 4.60?z+u+v+w?5.33, 0.10?u?0.20, 0.25?v?0.30, and 0.30?w?0.40. The atomic ratio of the metal lanthanum (La) to the metal cerium (Ce) is fixed at 3.0 to 3.2, which satisfies the requirements of the overcharge performance of the electrode material. A side elements are largely substituted by samarium (Sm) element, that is, the atomic ratio of Sm on the A side is 25.6% to 42%, so as to solve the problem of shortened cycle life caused by the small amount of cobalt (Co) atoms.

Abstract: An RRAM structure includes a dielectric layer. A bottom electrode, a resistive switching layer and a top electrode are disposed from bottom to top on the dielectric layer. A spacer is disposed at sidewalls of the bottom electrode, the resistive switching layer and the top electrode. The spacer includes an L-shaped spacer and a sail-shaped spacer. The L-shaped spacer contacts the sidewall of the bottom electrode, the sidewall of the resistive switching layer and the sidewall of the top electrode. The sail-shaped spacer is disposed on the L-shaped spacer. A metal line is disposed on the top electrode and contacts the top electrode and the spacer.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first fin structure. The semiconductor device structure includes a first source/drain structure over the first fin structure. The semiconductor device structure includes a first dielectric layer over the first source/drain structure and the substrate. The semiconductor device structure includes a first conductive contact structure in the first dielectric layer and over the first source/drain structure. The semiconductor device structure includes a second dielectric layer over the first dielectric layer and the first conductive contact structure. The semiconductor device structure includes a first conductive via structure passing through the second dielectric layer and connected to the first conductive contact structure. A first width direction of the first conductive contact structure is substantially parallel to a second width direction of the first conductive via structure.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: A uni-directional and multi-directional mechanical bearing suitable for supporting structures such as bridges comprises a removable cassette comprising a sliding layer composed of a low friction material such as PTFE. The removable cassette allows for the replacement of the sliding layer without needing to remove or replace the entire bearing. The bearing can be part of a kit that includes a replacement cassette having a varying thickness that corresponds to the uneven wear on the sliding layer of the removable cassette and compensates for an eccentric pressure on the bearing when under load.

Abstract: A RRAM (resistive random-access memory) device includes a bottom electrode line, a top electrode island and a resistive material. The bottom electrode line is directly on a first metal structure. The top electrode island is disposed beside the bottom electrode line. The resistive material is sandwiched by a sidewall of the bottom electrode line and a sidewall of the top electrode island. The present invention also provides a method of forming the RRAM device.

Abstract: Provided is a method of fabricating an image sensor device. An exemplary includes forming a plurality of radiation-sensing regions in a substrate. The substrate has a front surface, a back surface, and a sidewall that extends from the front surface to the back surface. The exemplary method further includes forming an interconnect structure over the front surface of the substrate, removing a portion of the substrate to expose a metal interconnect layer of the interconnect structure, and forming a bonding pad on the interconnect structure in a manner so that the bonding pad is electrically coupled to the exposed metal interconnect layer and separated from the sidewall of the substrate.

Abstract: In some examples, a locking card tray can include a first elongated side, a second elongated side located opposite the first elongated side, a first end side connected to the first elongated side and the second elongated side, a rack tray, and an elastic deformable member, where in response to an integrated circuit card being received by the rack tray, the elastic deformable member is to rotate from a first position to a second position such that the elastic deformable member protrudes from the locking card tray.

Abstract: A semiconductor structure includes a semiconductor device, a plurality of through semiconductor vias (TSV), a first seal ring, and a second seal ring. The TSVs are in the semiconductor device. Each of the TSVs has a first surface and a second surface opposite to the first surface. The first seal ring is located in proximity to an edge of the semiconductor structure and is physically connected to the first surface of each of the TSVs. The second seal ring is physically connected to the second surface of each of the TSVs.

Abstract: Some embodiments relate to a three-dimensional (3D) integrated circuit (IC). The 3D IC includes a first IC die comprising a first semiconductor substrate, and a first interconnect structure over the first semiconductor substrate. The 3D IC also includes a second IC die comprising a second semiconductor substrate, and a second interconnect structure that separates the second semiconductor substrate from the first interconnect structure. A seal ring structure separates the first interconnect structure from the second interconnect structure and perimetrically surrounds a gas reservoir between the first IC die and second IC die. The seal ring structure includes a sidewall gas-vent opening structure configured to allow gas to pass between the gas reservoir and an ambient environment surrounding the 3D IC.