Abstract: An integrated circuit module comprising integrated coupling transmission structures protruding from the main body of the integrated circuit with extra substrate material removed around and/or under the coupling transmission structures.

Abstract: A housing for an integrated circuit, comprising a base for securing a substrate with an integrated circuit thereon, a top cover, and a body with a cavity for receiving the substrate and at least a portion of the top cover therein to form an enclosed housing therewith, the body including at least one connector extending from within the cavity to outside of the body and configured to contact the integrated circuit when the substrate is in the cavity.

Abstract: A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the discrete device-heat sink assembly. An etch stop layer is formed between the wafer and the frontside power devices to protect them during backside processing and to reduce the contact resistance between the device and its heat sink. The heat sinks are formed by thinning, patterning and then plating the wafer in such a manner that the devices can be released without dicing. The heat sinks are preferably oversized so that a vacuum tool can grasp the heat sink from above without damaging the device and then compression bond the heat sink onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices.

Abstract: A multiband millimeterwave antenna system for communicating signals in multiple frequency bands is disclosed. A main antenna body is connected to antenna extensions by micro-electro-mechanical switches. By opening and closing the switches, the length of the antenna can be altered. The antenna is coupled to a microstrip feed line by an aperture. A series of matching stubs match the impedance of the feed line for the various signal frequencies.

Abstract: A low cost highly integrated method of fabricating a heat sink on the backside of a power semiconductor device maintains device performance, improves thermal transfer, and enables reliable planar connections without having to dice the wafer or package the discrete device-heat sink assembly. An etch stop layer is formed between the wafer and the frontside power devices to protect them during backside processing and to reduce the contact resistance between the device and its heat sink. The heat sinks are formed by thinning, patterning and then plating the wafer in such a manner that the devices can be released without dicing. The heat sinks are preferably oversized so that a vacuum tool can grasp the heat sink from above without damaging the device and then compression bond the heat sink onto a planar microstrip circuit assembly, which is designed and packaged to facilitate easy replacement of failed devices.

Abstract: Methods for the design and fabrication of micro-electro-mechanical switches are disclosed. Two different switch designs with three different switch fabrication techniques are presented for a total of six switch structures. Each switch has a multiple-layer armature with a suspended biasing electrode and a conducting transmission line affixed to the structural layer of the armature. A conducting dimple is connected to the conducting line to provide a reliable region of contact for the switch. The switch is fabricated using silicon nitride as the armature structural layer and silicon dioxide as the sacrificial layer supporting the armature during fabrication. Hydrofluoric acid is used to remove the silicon dioxide layer with post-processing in a critical point dryer to increase yield.