Abstract: Systems and methods for providing a low profile stacked die semiconductor package in which a first semiconductor package is stacked with a second semiconductor package and both semiconductor packages are conductively coupled to an active silicon substrate that communicably couples the first semiconductor package to the second semiconductor package. The first semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a first interconnect pattern having a first interconnect pitch. The second semiconductor package may conductively couple to the active silicon substrate using a plurality of interconnects disposed in a second interconnect pattern having a second pitch that is greater than the first pitch. The second semiconductor package may be stacked on the first semiconductor package and conductively coupled to the active silicon substrate using a plurality of conductive members or a plurality of wirebonds.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, the electronic package comprises a glass substrate, with a plurality of first pads on a first surface of the glass substrate, a plurality of second pads on a second surface of the glass substrate that is opposite from the first surface, a plurality of through glass vias (TGVs), wherein each TGV electrically couples a first pad to a second pad, wherein the plurality of first pads have a first pitch, and wherein the plurality of second pads have a second pitch that is greater than the first pitch, a bridge substrate over the glass substrate, a first die electrically coupled to first pads and the bridge substrate, and a second die electrically coupled to first pads and the bridge substrate, wherein the bridge substrate electrically couples the first die to the second die.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises, a package substrate, an interposer on the package substrate, a first die cube and a second die cube on the interposer, wherein the interposer includes conductive traces for electrically coupling the first die cube to the second die cube, a die on the package substrate, and an embedded multi-die interconnect bridge (EMIB) in the package substrate, wherein the EMIB electrically couples the interposer to the die.

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a base substrate. The base substrate may have a plurality of through substrate vias. In an embodiment, a first die is over the base substrate. In an embodiment a first cavity is disposed into the base substrate. In an embodiment, the first cavity is at least partially within a footprint of the first die. In an embodiment, a first component is in the first cavity.

Abstract: Embodiments disclosed herein include electronic packages and methods of fabricating electronic packages. In an embodiment, an electronic package comprises an interposer, where a cavity passes through the interposer, and a nested component in the cavity. In an embodiment, the electronic package further comprises a die coupled to the interposer by a first interconnect and coupled to the nested component by a second interconnect. In an embodiment, the first and second interconnects comprise a first bump, a bump pad over the first bump, and a second bump over the bump pad.

Abstract: Methods, apparatus, systems, and articles of manufacture are disclosed includes an integrated circuit (IC) package including a first die including a first surface and a second surface opposite the first surface, the first surface defined by a bulk semiconductor region of the first die, a second die including a third surface and a fourth surface opposite the third surface, the third surface defined by a bulk semiconductor region of the second die, the fourth surface facing towards the second surface, a first bonding layer between the second and fourth surfaces, the first bonding layer including first metal vias disposed therein, and a second bonding layer between the second and fourth surfaces, the second bonding layer including second metal vias disposed therein, the first bonding layer in direct contact with the second bonding layer, ones of the first metal vias in direct contact with ones of the second metal vias to electrically couple the first die to the second die.

Abstract: An apparatus is provided which comprises: an interposer comprising glass, one or more redistribution layers on a first interposer surface, one or more conductive contacts on a second interposer surface opposite the first interposer surface, one or more vias through the interposer coupling at least one of the conductive contacts on the second interposer surface with the redistribution layers on the first interposer surface, an integrated circuit device embedded within a cavity in the interposer between the first and second interposer surfaces, the embedded integrated circuit device coupled with a first redistribution layers surface, a stack of two or more integrated circuit devices coupled with a second redistribution layers surface opposite the first redistribution layers surface, and mold material surrounding at least one side of the stack of two or more integrated circuit devices. Other embodiments are also disclosed and claimed.

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

Abstract: Thermal heat spreaders and/or an IC die with solderable thermal structures may be assembled together with a solder array thermal interconnects. A thermal heat spreader may include a non-metallic material and one or more metallized surfaces suitable for bonding to a solder alloy employed as thermal interface material between the heat spreader and an IC die. An IC die may include a metallized back-side surface similarly suitable for bonding to a thermal interconnect comprising a solder alloy. Metallization on the IC die and/or heat spreader may comprise a plurality of solderable structures. A multi-chip package may include multiple IC die having different die thickness that are accommodated by a z-height thickness variation in the thermal interconnects and/or the solderable structures of the IC die or heat spreader.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more chiplets bonded to a base die and an inorganic dielectric material adjacent the chiplets and over the base die. The multichip composite device is coupled to a structural member that is made of or includes a heat conducting material, or has integrated fluidic cooling channels to conduct heat from the chiplets and the base die.

Abstract: Embodiments of a microelectronic assembly comprise: a plurality of layers of integrated circuit (IC) dies, each layer coupled to adjacent layers by first interconnects having a pitch of less than 10 micrometers between adjacent first interconnects; an end layer in the plurality of layers proximate to a first side of the plurality of layers comprises a dielectric material around IC dies in the end layer and a through-dielectric via (TDV) in the dielectric material of the end layer; a support structure coupled to the first side of the plurality of layers, the support structure comprising a structurally stiff base with conductive traces proximate to the end layer, the conductive traces coupled to the end layer by second interconnects; and a package substrate coupled to a second side of the plurality of layers, the second side being opposite to the first side.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a dielectric layer having one or more conductive traces and a surface; a microelectronic subassembly on the surface of the dielectric layer, the microelectronic subassembly including a first die and a through-dielectric via (TDV) surrounded by a dielectric material, wherein the first die is at the surface of the dielectric layer; a second die and a third die on the first die and electrically coupled to the first die by interconnects having a pitch of less than 10 microns, and wherein the TDV is electrically coupled at a first end to the dielectric layer and at an opposing second end to the second die; and a substrate on and coupled to the second and third dies; and an insulating material on the surface of the dielectric layer and around the microelectronic subassembly.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die, a conformal thermal heat spreading layer on the top and sidewalls of the integrated circuit dies, and an inorganic dielectric material on a portion of the conformal thermal heat spreading layer, laterally adjacent the integrated circuit dies, and over the base die. The conformal thermal heat spreading layer includes a high thermal conductivity material to provide a thermal pathway for the integrated circuit dies during operation.

Abstract: Microelectronic devices, assemblies, and systems include a multichip composite device having one or more integrated circuit dies bonded to a base die and an inorganic dielectric material adjacent the integrated circuit dies and over the base die. The multichip composite device includes a dummy die, dummy vias, or integrated fluidic cooling channels laterally adjacent the integrated circuit dies to conduct heat from the base die.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises, a package substrate, an interposer on the package substrate, a first die cube and a second die cube on the interposer, wherein the interposer includes conductive traces for electrically coupling the first die cube to the second die cube, a die on the package substrate, and an embedded multi-die interconnect bridge (EMIB) in the package substrate, wherein the EMIB electrically couples the interposer to the die.

Abstract: Embodiments disclosed herein include electronic packages and methods of fabricating electronic packages. In an embodiment, an electronic package comprises an interposer, where a cavity passes through the interposer, and a nested component in the cavity. In an embodiment, the electronic package further comprises a die coupled to the interposer by a first interconnect and coupled to the nested component by a second interconnect. In an embodiment, the first and second interconnects comprise a first bump, a bump pad over the first bump, and a second bump over the bump pad.

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.