Abstract: An apparatus is provided which comprises: a plurality of dielectric layers forming a substrate, a plurality of first conductive contacts on a first surface of the substrate, a cavity in the first surface of the substrate defining a second surface parallel to the first surface, a plurality of second conductive contacts on the second surface of the substrate, one or more integrated circuit die(s) coupled with the second conductive contacts, and mold material at least partially covering the one or more integrated circuit die(s) and the first conductive contacts. Other embodiments are also disclosed and claimed.

Abstract: Embodiments include semiconductor packages and methods to form the semiconductor packages. A semiconductor package includes a bridge over a glass patch. The bridge is coupled to the glass patch with an adhesive layer. The semiconductor package also includes a high-density packaging (HDP) substrate over the bridge and the glass patch. The HDP substrate is conductively coupled to the glass patch with a plurality of through mold vias (TMVs). The semiconductor package further includes a plurality of dies over the HDP substrate, and a first encapsulation layer over the TMVs, the bridge, the adhesive layer, and the glass patch. The HDP substrate includes a plurality of conductive interconnects that conductively couple the dies to the bridge and glass patch. The bridge may be an embedded multi-die interconnect bridge (EMIB), where the EMIB is communicatively coupled to the dies, and the glass patch includes a plurality of through glass vias (TGVs).

Abstract: An integrated circuit (IC) package comprises a first IC die comprising a first hardware interface at a first side of the first die, and one or more first conductive contacts at the first side. A second IC die coupled to the first die comprises a second hardware interface at a second side of the second die. Second conductive contacts of the first hardware interface are each in direct contact with a respective one of third conductive contacts of the second hardware interface. A third hardware interface comprises: one or more interconnect structures, each coupled to a respective one of the one or more first conductive contacts and each comprising a fourth conductive contact, and fifth conductive contacts at a third side of the second die, wherein the one or more interconnect structures are each to electrically couple the third hardware interface to the first die.

Abstract: Embodiments disclosed herein include chiplet modules and die modules. In an embodiment, a chiplet module comprises a first chiplet, where the first chiplet comprises a first active surface. In an embodiment the chiplet module further comprises a second chiplet, where the second chiplet comprises a second active surface. In an embodiment, the chiplet module further comprises a hybrid bonding interface between the first chiplet and the second chiplet, where the hybrid bonding interface electrically couples the first chiplet to the second chiplet.

Abstract: Techniques and mechanisms for incorporating an integrated circuit (IC) die into a die stack. In an embodiment, the die comprises multiple interconnects extending vertically through the die. The multiple interconnects comprise first interconnects which participate in communications via a first channel, second interconnects which participate in communications via a second channel, and third interconnects which are locally insulated from any transmitter or receiver circuitry of the die. Along a direction within a horizontal plane, the third interconnects are in an alternating arrangement with the first interconnects and the second interconnects, wherein the first interconnects and the second interconnects are on opposite sides of a line which is orthogonal to the direction.

Abstract: A packaged device comprises first die stack and a third die. The first die stack includes a first die comprising first conductive contacts each at a first side of the first die, and a second die comprising second conductive contacts each at a second side of the second die. First solder bonds which each extend to a respective one of the first conductive contacts. The third die comprises third conductive contacts each at a third side of the third die. The third die is coupled to the first die stack via second solder bonds which each extend to a respective one of the second conductive contacts, and to a respective one of the third conductive contacts. Each die of the first die stack is coupled to each of a respective one or more other dies of the first die stack via respective hybrid bonds.

Abstract: Multi-die composite packages including directly bonded IC die and at least one electro-thermo-mechanical die (ETMD). An ETMD is distinguished from an active IC die as an ETMD is a passive die lacking any semiconductor devices, such as transistors. In exemplary embodiments, an ETMD includes a substrate, which may be a crystalline semiconductor material, for example, and one or more through substrate vias (TSVs) passing through a thickness of the substrate. The TSVs may enable a ETMD to electrically interconnect an (active) IC die of a composite package to another IC die of the package or to a package host.

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

Abstract: A microelectronic package structure with inorganic fill material having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die between the second and third dies. A second layer is over the first layer, the second layer comprising an inorganic dielectric material, wherein a top surface of the second layer is substantially coplanar with top surfaces of the second and third dies.

Abstract: An electronic package technology is disclosed. A first active die can be mountable to and electrically coupleable to a package substrate. A second active die can be disposed on a top side of the first active die, the second active die being electrically coupleable to one or both of the first active die and the package substrate. At least one open space can be available on the top side of the first active die. At least a portion of a stiffener can substantially fill the at least one open space available on the top side of the first active die.

Abstract: Embodiments herein relate to systems, apparatuses, or processes for attaching dummy dies to a wafer that includes a plurality of active dies, where the dummy dies are placed along or in dicing streets where the wafer is to be cut during singulation. In embodiments, the dummy dies may be attached to the wafer using a die attach film, or may be attached using hybrid bonding. Other embodiments may be described and/or claimed.

Abstract: Stacked die assemblies having a moisture sealant layer according to embodiments are described herein. A microelectronic package structure having a first die with a second and an adjacent third die on the first die. Each of the second and third die comprise hybrid bonding interfaces with the first die. A first layer is on a region of the first die adjacent sidewalls of the second and the third dies, and adjacent an edge portion of the first die. The first layer comprises a diffusion barrier material A second layer is over the first layer, the second layer, wherein a top surface of the second layer is substantially coplanar with the top surfaces of the second and third dies. The first layer provides a hermetic moisture sealant layer for stacked die package structures.

Abstract: Integrated circuit assemblies can be fabricated on a wafer scale, wherein a base template, having a plurality of openings, may cover a base substrate, such as a die wafer, wherein the base substrate has a plurality of first integrated circuit devices formed therein and wherein at least one second integrated circuit device is electrically attached to a corresponding first integrated circuit device through a respective opening in the base template. Thus, when the base substrate and base template are singulated into individual integrated circuit assemblies, the individual integrated circuit assemblies will each have a first integrated circuit that is edge aligned to a singulated portion of the base template. The singulated portion of the base template can provide an improved thermal path, mechanical strength, and/or electrical paths for the individual integrated circuit assemblies.

Abstract: An embedded multi-die interconnect bridge (EMIB) is fabricated on a substrate using photolithographic techniques, and the EMIB is separated from the substrate and placed on the penultimate layer of an integrated-circuit package substrate, below the top solder-resist layer. A low Z-height of the EMIB, allows for useful trace and via real estate below the EMIB, to be employed in the package substrate.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, the electronic package comprises a base substrate. The base substrate may have a plurality of through substrate vias. In an embodiment, a first die is over the base substrate. In an embodiment a first cavity is disposed into the base substrate. In an embodiment, the first cavity is at least partially within a footprint of the first die. In an embodiment, a first component is in the first cavity.

Abstract: Ultra-thin, hyper-density semiconductor packages and techniques of forming such packages are described. An exemplary semiconductor package is formed with one or more of: (i) metal pillars having an ultra-fine pitch (e.g., a pitch that is greater than or equal to 150 ?m, etc.); (ii) a large die-to-package ratio (e.g., a ratio that is equal to or greater than 0.85, etc.); and (iii) a thin pitch translation interposer. Another exemplary semiconductor package is formed using coreless substrate technology, die back metallization, and low temperature solder technology for ball grid array (BGA) metallurgy. Other embodiments are described.

Abstract: Embodiments disclosed herein include electronic packages and methods of fabricating electronic packages. In an embodiment, an electronic package comprises an interposer, where a cavity passes through the interposer, and a nested component in the cavity. In an embodiment, the electronic package further comprises a die coupled to the interposer by a first interconnect and coupled to the nested component by a second interconnect. In an embodiment, the first and second interconnects comprise a first bump, a bump pad over the first bump, and a second bump over the bump pad.

Abstract: Embodiments of a system and methods for localized high density substrate routing are generally described herein. In one or more embodiments an apparatus includes a medium, first and second circuitry elements, an interconnect element, and a dielectric layer. The medium can include low density routing therein. The interconnect element can be embedded in the medium, and can include a plurality of electrically conductive members therein, the electrically conductive member can be electrically coupled to the first circuitry element and the second circuitry element. The interconnect element can include high density routing therein. The dielectric layer can be over the interconnect die, the dielectric layer including the first and second circuitry elements passing therethrough.

Abstract: A multi-chip unit suitable for chip-level packaging may include multiple IC chips that are interconnected through a metal redistribution structure, and that are directly bonded to an integrated heat spreader. Bonding of the integrated heat spreader to the multiple IC chips may be direct so that no thermal interface material (TIM) is needed, resulting in a reduced bond line thickness (BLT) and lower thermal resistance. The integrated heat spreader may further serve as a structural member of the multi-chip unit, allowing a second side of the redistribution structure to be further interconnected to a host by solder interconnects. The redistribution structure may be fabricated on a sacrificial interposer that may facilitate planarizing IC chips of differing thickness prior to bonding the heat spreader. The sacrificial interposer may be removed to expose the RDL for further interconnection to a substrate without the use of through-substrate vias.

Abstract: Embodiments disclosed herein include electronic packages. In an embodiment, the electronic package comprises, a package substrate, an interposer on the package substrate, a first die cube and a second die cube on the interposer, wherein the interposer includes conductive traces for electrically coupling the first die cube to the second die cube, a die on the package substrate, and an embedded multi-die interconnect bridge (EMIB) in the package substrate, wherein the EMIB electrically couples the interposer to the die.