Abstract: An integrated circuit created from a cell library of compact cells. The cell library includes cells having a metal trace routed along the boundary of the cells for carrying a power supply voltage. The cells also include another metal trace routed along the interior of the cells for carrying another power supply voltage. A cell pin carrying an input signal or output signal of the cell is located outside of the region between the two power rails. By routing the power supply voltages and cell pins of the cell in this manner, the integrated circuit created from the cell is extremely compact while still complying with various design rules.

Abstract: A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on the given semiconductor fin. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. Interlayer connectors can be aligned over corresponding semiconductor fins which connect to gate elements.

Abstract: A finFET block architecture suitable for use of a standard cell library, is based on an arrangement including a first set of semiconductor fins in a first region of the substrate having a first conductivity type, and a second set of semiconductor fins in a second region of the substrate, the second region having a second conductivity type. A patterned gate conductor layer including gate traces in the first and second regions, arranged over channel regions of the first and second sets of semiconductor fins is used for transistor gates. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and can include a plurality of floating power buses over the fins in the first and second regions.

Abstract: A finFET block architecture includes a first set of semiconductor fins having a first conductivity type, and a second set of semiconductor fins having a second conductivity type. An inter-block insulator is placed between outer fins of the first and second sets. A patterned gate conductor layer includes a first plurality of gate traces extending across the set of fins in the first block without crossing the inter-block insulator, and a second plurality of gate traces extending across the set of fins in the second block without crossing the inter-block insulator. Patterned conductor layers over the gate conductor layer are arranged in orthogonal layout patterns, and include an inter-block connector arranged to connect gate traces in the first and second blocks.

Abstract: A cell-based architecture for an integrated circuit that uses at least two categories of cells: cut-gate cells and breaker cells. Cut-gate cells have gates that extend from one boundary of the cell to an opposite boundary of the cell. Cut gate features are located along the boundaries of the cell to indicate locations for cutting the gates during fabrication. Instances of the cut-gate cells are arranged in abutting rows that result in the formation of continuous gate strips during the fabrication process, which are then cut into individual gates with a cut-gate mechanism. Breaker cells have gates that do not extend to the boundaries of the breaker cell. To prevent the continuous gate strips from exceeding design rule requirements, instances of breaker cells are placed at intervals between the rows of cut-gate cell instances to restrict the size of the gate strips.

Abstract: A finFET block architecture uses end-to-end finFET blocks in which the fin lengths are at least twice the contact pitch, whereby there is enough space for interlayer connectors to be placed on the proximal end and the distal end of a given semiconductor fin, and on the gate element on the given semiconductor fin. A first set of semiconductor fins having a first conductivity type and a second set of semiconductor fins having a second conductivity type can be aligned end-to-end. Interlayer connectors can be aligned over corresponding semiconductor fins which connect to gate elements.

Abstract: Cells designed to accommodate metal routing tracks having a pitch that is an odd multiple of a manufacturing grid. The cells includes cell pins that are located within the cell based on the offsets of the routing tracks relative to the cell boundaries. The cell pins are wider than wires that are routed along the metal routing tracks. The standard cell may be placed in a layout in either a normal orientation or in a flipped orientation. In both orientations, the cell pins are aligned with the wires that are routed along the metal routing tracks.

Abstract: A cell-based architecture for an integrated circuit. A row of cell instances borders a first adjacent row of cell instances along a first boundary and a second adjacent row of cell instances along a second boundary. A first power rail (e.g., carrying an auxiliary voltage) extends along the first boundary. A second power rail (e.g., VSS) extends along the second boundary. The second power rail is wider than the first power rail. Additionally, a third power rail (e.g., VDD) extends across the interior of the second row of cells.

Abstract: A cell-based architecture for an integrated circuit that uses at least two categories of cells: cut-gate cells and breaker cells. Cut-gate cells have gates that extend from one boundary of the cell to an opposite boundary of the cell. Cut gate features are located along the boundaries of the cell to indicate locations for cutting the gates during fabrication. Instances of the cut-gate cells are arranged in abutting rows that result in the formation of continuous gate strips during the fabrication process, which are then cut into individual gates with a cut-gate mechanism. Breaker cells have gates that do not extend to the boundaries of the breaker cell. To prevent the continuous gate strips from exceeding design rule requirements, instances of breaker cells are placed at intervals between the rows of cut-gate cell instances to restrict the size of the gate strips.

Abstract: A cell-based architecture for an integrated circuit. A row of cell instances borders a first adjacent row of cell instances along a first boundary and a second adjacent row of cell instances along a second boundary. A first power rail (e.g., carrying an auxiliary voltage) extends along the first boundary. A second power rail (e.g., VSS) extends along the second boundary. The second power rail is wider than the first power rail. Additionally, a third power rail (e.g., VDD) extends across the interior of the second row of cells.

Abstract: Cells designed to accommodate metal routing tracks having a pitch that is an odd multiple of a manufacturing grid. The cells includes cell pins that are located within the cell based on the offsets of the routing tracks relative to the cell boundaries. The cell pins are wider than wires that are routed along the metal routing tracks. The standard cell may be placed in a layout in either a normal orientation or in a flipped orientation. In both orientations, the cell pins are aligned with the wires that are routed along the metal routing tracks.

Abstract: An integrated circuit created from a cell library of compact cells. The cell library includes cells having a metal trace routed along the boundary of the cells for carrying a power supply voltage. The cells also include another metal trace routed along the interior of the cells for carrying another power supply voltage. A cell pin carrying an input signal or output signal of the cell is located outside of the region between the two power rails. By routing the power supply voltages and cell pins of the cell in this manner, the integrated circuit created from the cell is extremely compact while still complying with various design rules.

Abstract: Various methods and apparatuses are described in which an integrated circuit is organized into rows and columns of macro cells having a layout architecture that includes at least two metal layers and a plurality of traces carrying three or more different potentials of voltage routed by the metal layers. A first, a second, and a third adjacent metal layers extend across the integrated circuit. The plurality of traces carry three or more different potentials of voltage and are routed in the metal layers. A first power trace supplies a VDD voltage potential. A second power trace supplies a VSS voltage potential. A third power trace supplies a third voltage potential to support sleep modes and retain data during sleep modes. All three power supply traces connect to one or more transistors in a first macro cell.

Abstract: An apparatus for a volatile latch circuit. The volatile latch circuit may have a master latch sub circuit coupled to a slave latch sub circuit. The slave latch sub circuit maintains the logic state stored by the volatile latch circuit. The slave sub circuit may connect to a first power trace that continuously provides a first voltage potential to the slave latch sub circuit even during a sleep mode. The master latch sub circuit may connect to a second power trace that provides a second voltage potential to the master latch sub circuit that is switchably turned off during the sleep mode.

Abstract: Various methods and apparatuses are described in which an integrated circuit is organized into rows and columns of macro cells having a layout architecture that includes at least two metal layers and a plurality of traces carrying three or more different potentials of voltage routed by the metal layers. A first, a second, and a third adjacent metal layers extend across the integrated circuit. The first metal layer may be located between the second metal layer and the layer of the macro cells. The second metal layer may be located between the third metal layer and the first metal layer. The third metal layer may be orientated orthogonal to the second metal layer. The plurality of traces carry three or more different potentials of voltage and are routed in the metal layers. A first power trace supplies a VDD voltage potential. A second power trace supplies a VSS voltage potential. A third power trace supplies a third voltage potential.

Abstract: Various methods and apparatuses are described in which a volatile latch circuit. The volatile latch circuit may have a master latch sub circuit coupled to a slave latch sub circuit. The slave latch sub circuit maintains the logic state stored by the volatile latch circuit. The slave sub circuit may connect to a first power trace that continuously provides a first voltage potential to the slave latch sub circuit even during a sleep mode. The master latch sub circuit may connect to a second power trace that provides a second voltage potential to the master latch sub circuit that is switchably turned off during the sleep mode.

Abstract: An metal programmable integrated circuit apparatus and method of manufacture and design using elevated metal layers for design-specific customization. The lower metal layer are used to form core cells and to provide power and clocking signals to the core cells. These core cell are customizable by the designer using only the upper metal layers. This new architecture allows faster turn-around time and fewer masks while keeping the time-to-market advantages of gate array structures.

Abstract: Disclosed is a method and system for removing hardware overlap for use with a computer aided design apparatus. The method and system remove overlap by separately classifying all free blocks and blocks fixed in place, and then shifting cells between free blocks while maintaining the same relative ordering of the cells. Thus, all move bounds are respected and only cells that exist in free blocks actually move. The operation takes place one partition at a time, whereby a typical partition includes a row of cells.