Abstract: The present invention provides an electroplating process and a method for manufacturing an integrated circuit. The electroplating process includes, among other steps, placing a substrate 290 in an enclosure 200 being substantially devoid of unwanted contaminants and forming a material layer 310 over the substrate 290 within the enclosure 200, the enclosure 200 still being substantially devoid of the unwanted contaminants. The electroplating process further includes forming a thin layer of oxide 410 over the material layer 310 within the enclosure 200, the enclosure 200 still being substantially devoid of the unwanted contaminants during the forming the thin layer of oxide 410.

Abstract: The present invention provides a system for removing organic contaminants (216) from a copper seed layer that has been deposited on a semiconductor substrate (206). The present invention provides a housing (204) to enclose the semiconductor substrate within. An ultraviolet radiation source (210) is disposed within the housing. A treatment medium (208) is also provided within the housing. The semiconductor substrate is enclosed within the housing and exposed to the treatment medium. The ultraviolet radiation source exposes the semiconductor substrate to ultraviolet radiation, desorbing the contaminants from the seed layer.

Abstract: The present invention provides a system and method for evaluating gate oxide integrity in a semiconductor wafer. The system may include: a semiconductor wafer; a layer of gate oxide on the semiconductor wafer; a layer of polysilicon on the gate oxide; an electron beam microscope with adjustable energy levels, wherein the electron beam is directed at the semiconductor wafer; an electron beam inspection tool used to detect passive voltage contrasts within the gate oxide layer. The system may also include a measuring tool for measuring an electrical current level of the semiconductor substrate. The system may also include an electrical ground connected to the semiconductor wafer. The system may also include the energy levels vary from about 600 eV to 5000 eV.