Abstract: After forming a manganese (Mn)-containing cap layer over interconnects embedded in an interlevel dielectric (ILD) layer, a lithographic stack is formed over the Mn-containing cap layer. The lithographic stack is subsequently patterned to expose a portion of the Mn-containing cap layer that overlies a subset of the interconnects between which the air gaps are to be formed. A portion of the ILD layer located between the subset of the interconnects is damaged through the exposed portion of the Mn-containing cap layer. The damaged portion of the ILD layer is subsequently removed to form openings between the subset of the interconnects. The Mn-containing cap layer acts as a temporary protection layer preventing erosion of the underlying interconnects during the air gap formation.

Abstract: A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.

Abstract: An electrical device comprising including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.

Abstract: A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.

Abstract: A porous low k dielectric material containing atoms of at least Si, C, N and H (C and/or O may also be present) is used to provide an interconnect structure having reduced BEOL capacitance and resistance. The porous low k dielectric material is used as an interconnect dielectric material in which at least one interconnect metal-containing structure is embedded therein. The porous low k dielectric material has metal diffusion barrier properties due to the presence of nitrogen as an elemental constituent of the porous low k dielectric material. As such, the porous low k dielectric material can eliminate the need of a diffusion barrier liner, or reduce the thickness of the diffusion barrier liner that is typically formed between an interconnect dielectric material and the embedded interconnect metal structure.

Abstract: A semiconductor substrate including one or more conductors is provided. A first layer and a second layer are deposited on the top surface of the conductors. A dielectric cap layer is formed over the semiconductor substrate and air gaps are etched into the dielectric layer. The result is a bilayer cap air gap structure with effective electrical performance.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.

Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: Low capacitance and high reliability interconnect structures and methods of manufacture are disclosed. The method includes forming a copper based interconnect structure in an opening of a dielectric material. The method further includes forming a capping layer on the copper based interconnect structure. The method further includes oxidizing the capping layer and any residual material formed on a surface of the dielectric material. The method further includes forming a barrier layer on the capping layer by outdiffusing a material from the copper based interconnect structure to a surface of the capping layer. The method further includes removing the residual material, while the barrier layer on the surface of the capping layer protects the capping layer.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: An electrical device including an opening in a low-k dielectric material, and a copper including structure present within the opening for transmitting electrical current. A liner is present between the opening and the copper including structure. The liner includes a superlattice structure comprised of a metal oxide layer, a metal layer present on the metal oxide layer, and a metal nitride layer that is present on the metal layer. A first layer of the superlattice structure that is in direct contact with the low-k dielectric material is one of said metal oxide layer and a final layer of the superlattice structure that is in direct contact with the copper including structure is one of the metal nitride layers.

Abstract: Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.

Abstract: A low k dielectric material with enhanced electrical and mechanical properties is provided which, in some applications, can also reduce the capacitance of a semiconductor device. The low k dielectric material includes CNT nanotubes that are randomly dispersed within a low k dielectric material matrix. The low k dielectric material can be used in a variety of electronic devices including, for example, as an insulator layer within a back end of line interconnect structure.

Abstract: Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.

Abstract: Embodiments of the present invention provide hydrogen-free dielectric films and methods of fabrication. A hydrogen-free precursor, such as tetraisocyanatosilane, and hydrogen-free reactants, such as nitrogen, oxygen (O2/O3) and nitrous oxide are used with chemical vapor deposition processes (PECVD, thermal CVD, SACVD, HDP CVD, and PE and Thermal ALD) to create hydrogen-free dielectric films. In some embodiments, there are multilayer dielectric films with sublayers of various materials such as silicon oxide, silicon nitride, and silicon oxynitride. In embodiments, the hydrogen-free reactants may include Tetra Isocyanato Silane, along with a hydrogen-free gas including, but not limited to, N2, O2, O3, N2O, CO2, CO and a combination thereof of these H-Free gases. Plasma may be used to enhance the reaction between the TICS and the other H-free gasses. The plasma may be controlled during film deposition to achieve variable density within each sublayer of the films.

Abstract: Disclosed herein is an ultra-low dielectric (k) film and methods of making thereof. A ultra-low k film has a covalently bonded network comprising atoms of silicon, oxygen, carbon, and hydrogen, a cyclotrisilane structure, and a plurality of pores having a pore size distribution (PSD) of less than about 1.1 nanometers (nm). The ultra-low k film has a k value of less than about 2.4 and at least about 28 atomic percent of carbon.

Abstract: A low k dielectric material with enhanced electrical and mechanical properties is provided which, in some applications, can also reduce the capacitance of a semiconductor device. The low k dielectric material includes CNT nanotubes that are randomly dispersed within a low k dielectric material matrix. The low k dielectric material can be used in a variety of electronic devices including, for example, as an insulator layer within a back end of line interconnect structure.