Patents by Inventor Denis Alexandrovich Glushkov

Denis Alexandrovich Glushkov has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9964852
    Abstract: A source collector apparatus for use in a lithographic apparatus includes a fuel droplet generator configured in use to generate a stream of fuel droplets directed from an outlet of the fuel droplet generator towards a plasma formation location. In order to prevent droplet satellites from interfering with plasma formation, a gas supply is provided that in use provides a flow of gas (e.g., hydrogen) that deflects any droplet satellites out of the fuel droplet stream. Additionally, a detection apparatus may be provided as part of a shroud to determine the point at which coalescence of fuel droplets occurs thereby providing an indication of the likelihood of satellite droplets being present in the fuel droplet stream.
    Type: Grant
    Filed: November 3, 2017
    Date of Patent: May 8, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Niek Antonius Jacobus Maria Kleemans, Denis Alexandrovich Glushkov, Ronald Johannes Hultermans, Benedictus Mathijs Renkens, Gerardus Hubertus Petrus Maria Swinkels, Christiaan Johannes Petrus Verspeek
  • Publication number: 20180120711
    Abstract: A source collector apparatus for use in a lithographic apparatus includes a fuel droplet generator configured in use to generate a stream of fuel droplets directed from an outlet of the fuel droplet generator towards a plasma formation location. In order to prevent droplet satellites from interfering with plasma formation, a gas supply is provided that in use provides a flow of gas (e.g., hydrogen) that deflects any droplet satellites out of the fuel droplet stream. Additionally, a detection apparatus may be provided as part of a shroud to determine the point at which coalescence of fuel droplets occurs thereby providing an indication of the likelihood of satellite droplets being present in the fuel droplet stream.
    Type: Application
    Filed: November 3, 2017
    Publication date: May 3, 2018
    Inventors: Niek Antonius Jacobus Maria KLEEMANS, Denis Alexandrovich GLUSHKOV, Ronald Johannes HULTERMANS, Benedictus Mathijs RENKENS, Gerardus Hubertus Petrus Maria SWINKELS, Christiaan Johannes Petrus VERSPEEK
  • Patent number: 9897930
    Abstract: A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.
    Type: Grant
    Filed: July 22, 2009
    Date of Patent: February 20, 2018
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Leonid Aizikovitch Sjmaenok, Vadim Yevgenyevich Banine, Johannes Hubertus Josephina Moors, Denis Alexandrovich Glushkov, Andrei Mikhailovich Yakunin
  • Patent number: 9841680
    Abstract: A source collector apparatus for use in a lithographic apparatus includes a fuel droplet generator configured in use to generate a stream of fuel droplets directed from an outlet of the fuel droplet generator towards a plasma formation location. In order to prevent droplet satellites from interfering with plasma formation, a gas supply is provided that in use provides a flow of gas (e.g., hydrogen) that deflects any droplet satellites out of the fuel droplet stream. Additionally, a detection apparatus may be provided as part of a shroud to determine the point at which coalescence of fuel droplets occurs thereby providing an indication of the likelihood of satellite droplets being present in the fuel droplet stream.
    Type: Grant
    Filed: March 5, 2014
    Date of Patent: December 12, 2017
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Niek Antonius Jacobus Maria Kleemans, Denis Alexandrovich Glushkov, Ronald Johannes Hultermans, Benedictus Mathijs Renkens, Gerardus Hubertus Petrus Maria Swinkels, Christiaan Johannes Petrus Verspeek
  • Patent number: 9476841
    Abstract: The invention provides a method and apparatus for a commercially viable EUV light source for EUV metrology and actinic inspection of EUV lithography masks. The invention is carried out using a laser target in the form of a continuous jet of liquid Lithium, circulated in a closed loop system by means of a high temperature pump. The collector mirror is placed outside the vacuum chamber in an environment filled with an inert gas and EUV output to a collector mirror is provided through the spectral purity filter, configured as an EUV exit window for the vacuum chamber. In the vacuum chamber, the input window for the laser beam is coated with a screening optical element. Evaporative cleaning of the EUV spectral purity filter and the screening optical element is provided. The protective shield with a temperature higher than 180° C. may be adjusted around the target jet.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: October 25, 2016
    Assignee: OOO “Isteq B.V.”
    Inventors: Pavel Stanislavovich Antsiferov, Aleksandr Yurievich Vinokhodov, Vladimir Vitalievich Ivanov, Konstantin Nikolaevich Koshelev, Mikhail Sergeyevich Kryvokorytov, Vladimir Mikhailovich Krivtsun, Aleksandr Andreevich Lash, Vyacheslav Valerievich Medvedev, Yury Viktorovich Sidelnikov, Oleg Feliksovich Yakushev, Denis Alexandrovich Glushkov, Samir Ellwi, Pavel Viktorovich Seroglazov
  • Patent number: 9448492
    Abstract: A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.
    Type: Grant
    Filed: March 26, 2012
    Date of Patent: September 20, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Andrei Mikhailovich Yakunin, Denis Alexandrovich Glushkov, Vladimir Nikolaevich Polkovnikov, Nikolay Nikolaevitch Salashchenko, Leonid Aizikovitch Sjmaenok
  • Patent number: 9307624
    Abstract: A discharge produced plasma radiation source includes a laser beam pulse generator configured to provide a laser beam pulse to trigger a pinch in a plasma of the discharge produced plasma radiation source. The laser beam pulse generator is arranged to provide a laser beam pulse having an energy greater than an optimum laser beam pulse energy that corresponds to a maximum output of a given wavelength of radiation for a given discharge energy.
    Type: Grant
    Filed: June 15, 2009
    Date of Patent: April 5, 2016
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Denis Alexandrovich Glushkov, Vadim Yevgenyevich Banine, Vladimir Vitalevich Ivanov, Konstantin Nikolaevich Koshelev, Givi Georgievich Zukakishvili, Vladimir Mihailovitch Krivtsun, Yurii Victorovitch Sidelnikov, Kurt Gielissen, Oleg Yakushev
  • Publication number: 20160054663
    Abstract: A source collector apparatus for use in a lithographic apparatus includes a fuel droplet generator configured in use to generate a stream of fuel droplets directed from an outlet of the fuel droplet generator towards a plasma formation location. In order to prevent droplet satellites from interfering with plasma formation, a gas supply is provided that in use provides a flow of gas (e.g., hydrogen) that deflects any droplet satellites out of the fuel droplet stream. Additionally, a detection apparatus may be provided as part of a shroud to determine the point at which coalescence of fuel droplets occurs thereby providing an indication of the likelihood of satellite droplets being present in the fuel droplet stream.
    Type: Application
    Filed: March 5, 2014
    Publication date: February 25, 2016
    Inventors: Niek Antonius Jacobus Maria KLEEMANS, Denis Alexandrovich GLUSHKOV, Ronald Johannes HULTERMANS, Benedictus Mathijs RENKENS, Gerardus Hubertus Petrus Maria SWINKELS, Christiaan Johannes Petrus VERSPEEK
  • Patent number: 9082521
    Abstract: A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: July 14, 2015
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Denis Alexandrovich Glushkov, Vadim Yevgenyevich Banine, Leonid Aizikovitch Sjmaenok, Nikolay Nikolaevitch Salashchenko, Nikolay Ivanovich Chkhalo
  • Publication number: 20140198306
    Abstract: A multilayer mirror for use in device lithography is configured to reflect and/or pattern radiation having a wavelength in the range of about 6.4 nm to about 7.2 nm. The multilayer mirror has a plurality of alternating layers of materials. The plurality of alternating layers of materials include first layers of materials and second layers of materials. The second layers have a higher refractive index for the radiation than the first layers. The materials of the first layers and the materials of the second layers are mutually chemically unreactive at an interface therebetween at temperatures less than 300° C. This may allow the mirrors to have a narrow boundary region of intermingled materials from alternating layers between the layers, for example of 0.5 nm or less in width, which may improve sharpness of the boundary region and improve reflectivity.
    Type: Application
    Filed: March 26, 2012
    Publication date: July 17, 2014
    Applicant: ASML Netherlands B.V.
    Inventors: Andrei Mikhailovich Yakunin, Denis Alexandrovich Glushkov, Vladimir Nikolaevich Polkovnikov, Nikolay Nikolaevitch Salashchenko, Leonid Aizikovitch Sjmaenok
  • Patent number: 8454849
    Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
    Type: Grant
    Filed: March 18, 2011
    Date of Patent: June 4, 2013
    Assignee: ASML Netherlands B.V.
    Inventors: Sander Frederik Wuister, Vadim Yevgenyevich Banine, Arie Jeffrey Den Boef, Yvonne Wendela Kruijt-Stegeman, Tatyana Viktorovna Rakhimova, Dmitriy Viktorovich Lopaev, Denis Alexandrovich Glushkov, Andrei Mikhailovich Yakunin, Roelof Koole
  • Publication number: 20130015373
    Abstract: An EUV radiation source comprising a fuel supply (200) configured to deliver a droplet of fuel to a plasma generation location (201), a first laser beam source configured to provide a first beam of laser radiation (205) incident upon the fuel droplet at the plasma generation location and thereby vaporizes the fuel droplet, and a second laser beam source configured to subsequently provide a second beam of laser radiation (205) at the plasma generation location, the second beam of laser radiation being configured to vaporize debris particles (252) arising from incomplete vaporization of the fuel droplet.
    Type: Application
    Filed: March 8, 2011
    Publication date: January 17, 2013
    Inventors: Andrei Mikhailovich Yakunin, Vadim Yevgenyevich Banine, Vladimir Vitalevich Ivanov, Konstantin Nikolaevich Koshelev, Vladimir Mihailovitch Krivtsun, Denis Alexandrovich Glushkov
  • Publication number: 20110292366
    Abstract: A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.
    Type: Application
    Filed: January 11, 2010
    Publication date: December 1, 2011
    Inventors: Denis Alexandrovich Glushkov, Vadim Yevgenyevich Banine, Leonid Aizikovitch Sjmaenok, Nikolay Nikolaevitch Salashchenko, Nikolay Ivanovich Chkhalo
  • Publication number: 20110226735
    Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.
    Type: Application
    Filed: March 18, 2011
    Publication date: September 22, 2011
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Sander Frederik Wuister, Vadim Yevgenyevich Banine, Arie Jeffrey Den Boef, Yvonne Wendela Kruijt-Stegeman, Tatyana Viktorovna Rakhimova, Dmitriy Viktorovich Lopaev, Denis Alexandrovich Glushkov, Andrei Mikhailovich Yakunin, Roelof Koole
  • Publication number: 20110080573
    Abstract: A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers, U and B9C layers, Th and B9C layers, La and B layers, C and B layers. U and B layers, and Th and B layers.
    Type: Application
    Filed: May 20, 2009
    Publication date: April 7, 2011
    Applicant: ASML Netherlands B.V.
    Inventors: Denis Alexandrovich Glushkov, Vadim Yevgenyevich Banine, Johannes Hubertus Josephina Moors, Leonid Aizikovitch Sjmaenok, Nikolai Nikolaevich Salaschenko
  • Publication number: 20100328639
    Abstract: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.
    Type: Application
    Filed: June 29, 2010
    Publication date: December 30, 2010
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Martin Jacobus Johan Jak, Vadim Yevgenyevich Banine, Maarten Marinus Johannes Wilhelmus Van Herpen, Wouter Anthon Soer, Denis Alexandrovich Glushkov, Andrei Mikhailovich Yakunin
  • Publication number: 20100141909
    Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
    Type: Application
    Filed: November 27, 2007
    Publication date: June 10, 2010
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Arnoud Cornelis Wassink, Vadim Yevgenyevich Banine, Vladimir Vitalevitch Ivanov, Konstantin Nikolaevitch Koshelev, Theodorus Petrus Maria Cadee, Vladimir Mihailòvitch Krivtsun, Derk Jan Wilfred Klunder, Maarten Marinus Johannes Wilhelmus Van Herpen, Paul Peter Anna Antonius Brom, Wouter Anthon Soer, Denis Alexandrovich Glushkov