Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.

Abstract: An EUV radiation source comprising a fuel supply (200) configured to deliver a droplet of fuel to a plasma generation location (201), a first laser beam source configured to provide a first beam of laser radiation (205) incident upon the fuel droplet at the plasma generation location and thereby vaporizes the fuel droplet, and a second laser beam source configured to subsequently provide a second beam of laser radiation (205) at the plasma generation location, the second beam of laser radiation being configured to vaporize debris particles (252) arising from incomplete vaporization of the fuel droplet.

Abstract: A multilayer mirror to reflect radiation having a wavelength in the range of 2-8 nm has alternating layers. The alternating layers include a first layer and a second layer. The first and second layers are selected from the group consisting of: U and B4C layers, Th and B4C layers, La and B9C layers, La and B4C layers, U and B9C layers, Th and B9C layers, La and B layers, U and B layers, C and B layers, Th and B layers, U compound and B4C layers, Th compound and B4C layers, La compound and B9C layers, La compound and B4C layers, U compound and a B9C layers, Th compound and a B9C layers, La compound and a B layers, U compound and B layers, and Th compound and a B layers. An interlayer is disposed between at least one of the first layers and the second layer.

Abstract: An imprint lithography method is disclosed that includes, after imprinting an imprint lithography template into a layer of imprintable medium to form a pattern in that imprintable medium and fixing that pattern to form a patterned layer of imprintable medium, adding etch resistant material (i.e. a hard mask) to a part of the patterned layer of imprintable medium to reduce a difference between an intended topography and an actual topography of that part of the patterned layer of imprintable medium.

Abstract: A multilayer mirror is constructed and arranged to reflect radiation haying a wavelength in the range of 2-8 nm. The multilayer mirror has alternating layers selected from the group consisting of: Cr and Sc layers, Cr and C layers, C and B4C layers, U and B4C layers, Th and B4C layers, C and B9C layers, La and B9C layers, U and B9C layers, Th and B9C layers, La and B layers, C and B layers. U and B layers, and Th and B layers.

Abstract: A transmissive spectral purity filter is configured to transmit extreme ultraviolet radiation. The spectral purity filter includes a filter part having a plurality of apertures to transmit extreme ultraviolet radiation and to suppress transmission of a second type of radiation. The apertures may be manufactured in carrier material such as silicon by an anisotropic etching process and topped with a reflective layer such as Mo metal, Ru metal, TiN or RuO. A diffusion barrier layer such as silicon nitride Si3N4, or silicon dioxide SiO2 is provided between the metal and the semiconductor to prevent diffusion and silicidation of the metal at elevated temperatures. The diffusion barrier layer may also serve as a hydrogen-resistant layer on parts of the semiconductor which are not beneath the reflective layer, and/or enhance emissivity for removal of heat from the structure.

Abstract: A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.