Abstract: A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and ?5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

Abstract: A method for preparing catalyst particles includes providing a catalyst starting material and an ion beam and implanting the catalyst starting material with an ion beam dose comprised between 4.5×1018 ions/g and 2×1019 ions/g comprising monocharged or monocharged and multicharged ions with an energy of the monocharged ions in the ion beam from at least 10 keV to at most 100 keV, thereby obtaining a catalyst. Such catalyst particles are useful in NOx, CO, and/or HC emission reduction devices, fuel cells, or as a catalyst in chemical reactions.

Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; and the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/?)5%. Advantageously this makes it possible to obtain materials made from glass that are non-reflective in the visible range.

Abstract: A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and ?2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

Abstract: A method for preparing catalyst particles that includes providing an average atomic number Zavr for a catalyst starting material, providing an ion beam having an ion beam current and selecting an ion beam dose X expressed in ions/g, based on the weight of the catalyst starting material, where X follows the following equations: (7/Zavr)×1018 ions/g<X<(7/Zavr)×6×1019 ions/g, implanting the catalyst starting material with an ion beam dose X primarily comprising the selected ions, where the ratio of the current of the ion beam current to the cross-section area of the ion beam, measured at the point of contact with the catalyst starting material is at least 1.2 ?A/mm2, thereby obtaining a catalyst. The resulting catalyst particles are useful in NOx, CO, and/or HC emission reduction devices, fuel cells, or catalysts in chemical reactions.

Abstract: A method for preparing catalyst particles that includes providing a catalyst starting material, an ion beam, and an electrostatic charge reduction device selected from a source of UV light, a source of X-rays, an electron beam, and an electrically grounded catalytic starting material carrier. The method further includes implanting the catalyst starting material with an ion beam dose primarily made of monocharged or monocharged and multicharged ions with an energy of the monocharged ions in the ion beam from at least 10 keV to at most 100 keV thereby obtaining a catalyst. The obtained catalyst particles particles are useful in NOx, CO, and/or HC emission reduction devices, fuel cells, or catalysts in chemical reactions.

Abstract: A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)?1/2 and 1017×(M/14)?1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

Abstract: A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and ?5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

Abstract: The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.

Abstract: The disclosure relates to a treatment method for coloring a metal that includes a) bombardment of the metal with a beam of singly- or multiply-charged gas ions produced by an electron cyclotron resonance source; b) heat treatment in ambient air so as to color the implanted metal using a temperature between 100° C. and 400° C. and an exposure time of between 1 minute and 4 hours.

Abstract: Process for treatment by an ion beam of a glass material where: the acceleration voltage of the ions is between 5 kV and 1000 kV; the temperature of the glass material is less than or equal to the glass transition temperature; the dose of nitrogen (N) or oxygen (O) ions per unit of surface area is chosen within a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to reduce the contact angle of a drop of water below 20°; a prior pretreatment is carried out with argon (Ar), krypton (Kr) or xenon (Xe) ions in order to strengthen the durability of the superhydrophilic treatment. Superhydrophilic glass materials of long duration are thus advantageously obtained.

Abstract: Process for treatment of a sapphire part with a beam of a mixture of mono- and multicharged ions of a gas which are produced by an electron cyclotron resonance (ECR) source, where: the voltage for acceleration of the ions is between 10 kV and 100 kV; the implanted dose, expressed in ions/cm2, is between (5×1016)×(M/14)?1/2 and 1017×(M/14)?1/2, where M is the atomic mass of the ion; the rate of displacement VD, expressed in cm/s, is between 0.025×(P/D) and 0.1×(P/D), where P is the power of the beam, expressed in W (watts), and D is the diameter of the beam, expressed in cm (centimetres). A part made of sapphire having a high transmittance and which is resistant to scratching is thus advantageously obtained.

Abstract: Method of antireflection and scratch-resistant treatment of a synthetic sapphire material where the acceleration voltage of the ions is between 5 kV and 1000 kV and is chosen in order to create an implanted layer having a thickness equal to a multiple of 100 nm; the microwave-induced annealing temperatures in the implanted surface are between 800° C. and 2000° C. with annealing times of between 1 and 1000 seconds. Synthetic sapphire materials are thus advantageously obtained where the reflection on the treated face is reduced by at least half while maintaining a hardness of greater than or equal to 8.

Abstract: A method for manufacturing blue reflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 15 kV and 35 kV and a dosage D between ?9.33×1015×A/kV+3.87×1017 ions/cm2 and 7.50×1017 ions/cm2. A blue reflective glass substrate including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.

Abstract: A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and ?2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

Abstract: The invention concerns a method for manufacturing scratch-resistant antireflective glass substrates by ion implantation, comprising ionizing a source gas of N2 so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N, by accelerating with an acceleration voltage comprised between 20 kV and 30 kV and an ion dosage comprised between 5×1016 ions/cm2 and 1017 ions/cm2. The invention further concerns scratch-resistant antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.

Abstract: A treatment method for modifying the reflected color of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected color of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).

Abstract: The disclosure relates to a treatment method for coloring a metal that includes a) bombardment of the metal with a beam of singly- or multiply-charged gas ions produced by an electron cyclotron resonance source; b) heat treatment in ambient air so as to color the implanted metal using a temperature between 100° C. and 400° C. and an exposure time of between 1 minute and 4 hours.