Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which —the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; —the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/?)5%.

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which—the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; —the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/?)5%. Advantageously this makes it possible to obtain materials made from glass that is non-reflective in the visible range.

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: —the powder is stirred once or a plurality of times; —the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe)—the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; —the treatment temperature of the powder (P) is less than or equal to Tf/3; —the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

Abstract: The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.

Abstract: A treatment method for modifying the reflected colour of a sapphire material surface comprising bombardment by a single- and/or multi-charged gas ion beam so as to modify the reflected colour of the treated sapphire material surface, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S).

Abstract: A treatment method of a sapphire material, said method comprising bombardment of a surface of the sapphire material, said surface facing a medium different from the sapphire material, by a single- and/or multi-charged gas ion beam so as to produce an ion implanted layer in the sapphire material, wherein the ions are selected from ions of the elements from the list consisting of helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), boron (B), carbon (C), nitrogen (N), oxygen (O), fluorine (F), silicon (Si), phosphorus (P) and sulphur (S). Use of said method to obtain a capacitive touch panel having a high transmission in the visible range.

Abstract: A method of treating a powder (P) made from cerium oxide using an ion beam (F) in which: the powder is stirred once or a plurality of times; the ions of the ion beam are selected from the ions of the elements of the list consisting of helium (He), boron (B), carbon (C), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) the acceleration voltage of the ions of the beam is between 10 kV and 1000 kV; the treatment temperature of the powder (P) is less than or equal to Tf/3; the ion dose per mass unit of powder to be treated is chosen from a range of between 1016 ions/g and 1022 ions/cm2 so as to lower the reduction temperature of the powder made from cerium oxide (P).

Abstract: Process for treatment by an ion beam of a glass material where: the acceleration voltage of the ions is between 5 kV and 1000 kV; the temperature of the glass material is less than or equal to the glass transition temperature; the dose of nitrogen (N) or oxygen (O) ions per unit of surface area is chosen within a range of between 1012 ions/cm2 and 1018 ions/cm2 so as to reduce the contact angle of a drop of water below 20°; a prior pretreatment is carried out with argon (Ar), krypton (Kr) or xenon (Xe) ions in order to stengthen the durability of the superhydrophilic treatment. Superhydrophilic glass materials of long duration are thus advantageously obtained.

Abstract: A method of treatment using a beam of singly- and multiply-charged gas ions produced by an electron cyclotron resonance (ECR) source of a glass material in which the ion acceleration voltage of between 5 kV and 1000 kV is chosen to create an implanted layer of a thickness equal to a multiple of 100 nm; the ion dose per surface unit in a range of between 1012 ions/cm2 and 1018 ions/cm2 is chosen so as to create an atomic concentration of ions equal to 10% with a level of uncertainty of (+/?)5%. Advantageously this makes it possible to obtain materials made from glass that is non-reflective in the visible range.

Abstract: A method of surface treating a fluid dispenser device, including a step of modifying at least one surface to be treated of at least a portion of the device in contact with the fluid by ionic implantation using a beam of multi-charged and multi-energy ions. The modified surface to be treated has barrier properties preventing interactions between the fluid and the modified surface to be treated, the multi-charged ions being selected from helium, boron, carbon, nitrogen, oxygen, neon, argon, krypton, and xenon, with ionic implantation being carried out to a depth of 0 ?m to 3 ?m.

Abstract: A method of surface treating a fluid dispenser device, said method comprising a step of modifying at least one surface to be treated of at least a portion of said device in contact with said fluid by ionic implantation using multi-charged and multi-energy ion beams, said modified surface to be treated having non-stick properties for said fluid, said multi-charged ions being selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), ionic implantation being carried out to a depth of 0 ?m to 3 ?m.

Abstract: A method of surface treating a fluid dispenser device, the method including a step of modifying at least one surface to be treated of at least a portion of the device by ionic implantation using multi-charged and multi-energy ion beams. The modified surface to be treated has anti-friction properties, the multi-charged ions are selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and ionic implantation is carried out to a depth of 0 ?m to 3 ?m.

Abstract: A method of treating an elastomer surface of a fluid dispenser device, said method comprising a step of modifying at least one elastomer surface to be treated of said device by ionic implantation using multi-charged and multi-energy ion beams, said modified elastomer surface limiting adhesion of the elastomer surfaces during the manufacturing and/or assembly stages, said multi-charged ions being selected from helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), ionic implantation being carried out to a depth of 0 ?m to 3 ?m.

Abstract: A method of surface treating a fluid dispenser device, the method including a step of modifying, by ion implantation using multi-charged and multi-energy ion beams, at least one surface to be treated of at least a portion of the device in contact with the fluid. The modified surface has properties limiting the formation of a biofilm and thus the appearance and/or proliferation of bacteria on the modified surface, the multi-charged ions being selected from helium, boron, carbon, nitrogen, oxygen, neon, argon, krypton, and xenon, ionic implantation being carried out to a depth of 0 ?m to 3 ?m.

Abstract: A treatment method for treating at least one surface of a solid polymer part wherein multi-energy ions X+ and X2+ are implanted simultaneously, where X is the atomic symbol selected from the list constituted by helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and wherein the ratio RX, where RX=X+/X2+, with X+ and X2+ expressed as atomic percentages, is less than or equal to 100, for example less than 20. This results in very significant reductions in the surface resistivity of the parts treated in this way, the appearance of antistatic properties or of electrostatic charge dissipation properties. By way of example, the ions X+ and X2+ are supplied by an ECR source.

Abstract: A method of grafting monomers (M) in a deep layer (1) in an organic material by using an ion beam (X), wherein the ion dose per unit area is selected so as to be in the range of 1012 ions/cm2 to 1018 ions/cm2 so as to create a reservoir of free radicals (1) within a large thickness in the range 0 nm to 3000 nm. Hydrophilic and/or hydrophobic and/or antibacterial monomers (M) are grafted in the reservoir of free radicals (1). Organic materials with hydrophobic, hydrophilic, and/or antibacterial properties that are effective for long-term use are thus advantageously obtained.

Abstract: The invention relates to a method for treating at least one surface of a solid elastomer part using helium ions. According to the invention, multi-energy ions He+ and He2+ are implanted simultaneously, and the ratio RHe, where RHe=HeVHe2+ with He+ et He2+ expressed in atomic percentage, is less than or equal to 100, for example less than 20, resulting in very significant reductions in the frictional properties of parts treated in this way. The He+ and He2+ ions are supplied, for example, by an ECR source.

Abstract: The present invention relates to a method for treating a metal element subjected to an ion beam, where: the ions of the beam are selected from among boron, carbon, nitrogen, and oxygen; the ion acceleration voltage, greater than or equal to 10 kV, and the power of the beam, between 1 W and 10 kW, as well as the ion load per surface unit are selected so as to enable the implantation of ions onto an implantation area with a thickness eI of 0.05 ?m to 5 ?m, and also enable the diffusion of ions into an implantation/diffusion area with a thickness eI+eP, of 0.1 ?m to 1,000 ?m; the temperature TZF of the area of the metal element located under the implantation/diffusion area is less than or equal to a threshold temperature TSD. In this manner, metal surfaces having remarkable mechanical characteristics are advantageously produced.

Abstract: The invention relates to a method for treating a metal deposit to reduce or eliminate the porosity thereof by bombarding the same with an ion source. The source is, for example, an electron cyclotron resonance (RCE) source. The metal can be gold. The ion bombardment has the effect of sealing the porosity of the metal deposit according to the type, energy, amount and angle of incidence of the ions.