Abstract: A vehicle seat reinforcement device includes a leg portion mounted on a floor panel, a seat cushion frame slidably mounted on the leg portion, and a load reinforcing structure connected between the leg portion and the seat cushion frame, wherein when a seat belt anchorage load is transferred to the seat cushion frame, the seat cushion frame is locked to the leg portion by the load reinforcing structure.

Abstract: A semiconductor component includes a semiconductor substrate, a first oxide layer, an oxide, a first polysilicon layer, a first metal layer, a first mask on the first metal layer, and a bitline. The semiconductor substrate includes an array region, a periphery region and a boundary open region. The boundary open region isolates the array region from the periphery region. The first oxide layer is deposited on the array region. The first polysilicon layer is deposited on the periphery region. The first metal layer is deposited on the first polysilicon layer. A trench is formed on the array region and passes through the first oxide layer. The bitline includes a second polysilicon layer filling in the trench and a second metal layer on the second polysilicon layer. A second mask is formed on the second metal layer. The second polysilicon layer is flush with the first oxide layer.

Abstract: The instant disclosure discloses a method comprises receiving a substrate having a first region and a second region defined thereon and an insulating structure formed there-between; forming, extending across the first region and the second region, a gate stack including a dielectric layer and a gate poly layer formed thereon; forming a first well mask covering the second region while defining a first opening that projectively overlaps the first region to partially exposes the gate poly layer; performing a first doping process, through the first opening and the gate stack, to form a first well in the substrate beneath the first opening; and performing a second doping process through the first opening to form a first gate conductor in the gate poly layer.

Abstract: A semiconductor component includes a semiconductor substrate, a first oxide layer, an oxide, a first polysilicon layer, a first metal layer, a first mask on the first metal layer, and a bitline. The semiconductor substrate includes an array region, a periphery region and a boundary open region. The boundary open region isolates the array region from the periphery region. The first oxide layer is deposited on the array region. The first polysilicon layer is deposited on the periphery region. The first metal layer is deposited on the first polysilicon layer. A trench is formed on the array region and passes through the first oxide layer. The bitline includes a second polysilicon layer filling in the trench and a second metal layer on the second polysilicon layer. A second mask is formed on the second metal layer. The second polysilicon layer is flush with the first oxide layer.

Abstract: The instant disclosure discloses a method comprises receiving a substrate having a first region and a second region defined thereon and an insulating structure formed there-between; forming, extending across the first region and the second region, a gate stack including a dielectric layer and a gate ploy layer formed thereon; forming a first well mask covering the second region while defining a first opening that projectively overlaps the first region to partially exposes the gate ploy layer; performing a first doping process, through the first opening and the gate stack, to form a first well in the substrate beneath the first opening; and performing a second doping process through the first opening to form a first gate conductor in the gate ploy layer.

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.

Abstract: Methods and apparatuses for measuring parameters of integrated circuit devices may be provided. The methods may include performing detecting operations on samples to obtain a set of data. Each detecting operation may include irradiating a light beam to the samples using a light irradiation part and detecting reflected light from the samples using a light detector. The samples may have values of a parameter different from one another. The method may also include obtaining a principal component based on the set of data and obtaining a regression model for the parameter using the principal component and values of the parameter of the samples.

Abstract: A method of monitoring a semiconductor fabrication process including forming a barrier pattern on a substrate, forming a sacrificial pattern on the barrier pattern, removing the sacrificial pattern to expose a surface of the barrier pattern, generating photoelectrons by irradiating X-rays to a surface of the substrate, and inferring at least one material existing on the surface of the substrate by collecting and analyzing the photoelectrons may be provided.

Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.

Abstract: A light is irradiated on a wafer including a plurality of pixels. Image information corresponding to each pixel is measured by sensing the light reflected by the wafer surface. A raw datum is calculated by subtracting the image information of a corresponding pixel from the image information of a target pixel. The target pixel is a subject pixel for detecting a defect. The corresponding pixel is a pixel located in a first device unit and corresponds to the target pixel. The first device unit is located adjacent to a second device unit that includes the target pixel. The threshold region is preset to have at least one pair of upper and lower limits. The target pixel is marked as a defective pixel when the raw datum thereof is included in the threshold region. Accordingly, the killer defect can be detected separate from the non-killer defects that are usually detected together with the killer defects.

Abstract: An apparatus for fabricating semiconductor devices is provided. The apparatus includes a process equipment in which a process is performed and a transfer system attached to the process equipment to supply a substrate to the process equipment. The transfer system includes a transfer robot for moving the substrate and a light supplier for supplying ultraviolet rays to the substrate. Methods of fabricating the semiconductor devices using the apparatus are also provided.

Abstract: An apparatus for detecting particles located on an object includes an emitter for irradiating lights to the particles. The object is disposed on a stage in a direction substantially parallel to a surface of the object. The apparatus further includes a driver for generating a relative motion between the emitter and the object for scanning the surface of the object with the lights and a detector for detecting the lights emitted from the emitter or lights scattered from the particle. With embodiments of the present invention, the particles can be quickly detected.

Abstract: A method for selecting reference images, a method and an apparatus for inspecting patterns on a wafer, and a method for dividing a wafer into application regions. In a method for inspecting patterns according to at least one exemplary embodiment of the present invention, a plurality of reference dies may be selected and a difference in gray levels of images of the references dies may be determined. The reference dies may include a first die substantially centrally located on the wafer and at least one second die located at an edge portion of the wafer. One reference image is selected if the difference in gray levels is within a permitted tolerance and more than one reference image may be selected if the difference in gray levels is not within the permitted tolerance. A pattern inspection may be performed using the reference images.

Abstract: According to a method of optimizing a focus of an optical inspection apparatus, a first light is irradiated onto a substrate. Then, the first light is reflected on the substrate to form a second light. The second light is sensed with various foci to form image information corresponding to each of the foci. Then, a relation between foci of the optical inspection apparatus and gain value corresponding to the image information is obtained. Then, the focus corresponding to a minimum gain value is set up as an optimized focus. Thus, a focus of an optical inspection apparatus is accurately adjusted to enhance efficiency of defecting defects, so that defects of semiconductor apparatus are more accurately detected.

Abstract: A method for forming a semiconductor wafer such as a standard semiconductor wafer used in a surface analysis system. Openings may be formed by partially etching a semiconductor substrate, and an insulation film may be formed on the openings. Contact holes may be formed to expose portions of the semiconductor substrate and the insulation film in the openings. The contact holes may be inspected by the surface analysis system, and the reliability of data obtained from the surface analysis system may be more precisely discriminated.

Abstract: An apparatus for detecting particles located on an object includes an emitter for irradiating lights to the particles. The object is disposed on a stage in a direction substantially parallel to a surface of the object. The apparatus further includes a driver for generating a relative motion between the emitter and the object for scanning the surface of the object with the lights and a detector for detecting the lights emitted from the emitter or lights scattered from the particle. With embodiments of the present invention, the particles can be quickly detected.