Patents by Inventor Derek R. Witty

Derek R. Witty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100233633
    Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.
    Type: Application
    Filed: May 24, 2010
    Publication date: September 16, 2010
    Applicant: Applied Materials, Inc.
    Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
  • Patent number: 7790635
    Abstract: A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about ?0.1 GPa and about ?10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.
    Type: Grant
    Filed: December 14, 2006
    Date of Patent: September 7, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Mihaela Balseanu, Victor T. Nguyen, Li-Qun Xia, Vladimir Zubkov, Derek R. Witty, Hichem M'Saad
  • Publication number: 20100151671
    Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.
    Type: Application
    Filed: March 1, 2010
    Publication date: June 17, 2010
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Alexandros T. Demos, Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad
  • Patent number: 7704816
    Abstract: Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about ?10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.
    Type: Grant
    Filed: July 11, 2008
    Date of Patent: April 27, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Jeong-Uk Huh, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
  • Publication number: 20100096688
    Abstract: A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
    Type: Application
    Filed: October 22, 2008
    Publication date: April 22, 2010
    Inventors: Mihaela Balseanu, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
  • Publication number: 20100098884
    Abstract: Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.
    Type: Application
    Filed: June 22, 2009
    Publication date: April 22, 2010
    Applicant: Applied Materials, Inc.
    Inventors: MIHAELA BALSEANU, Li-Qun Xia, Derek R. Witty, Yi Chen
  • Publication number: 20100099247
    Abstract: A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
    Type: Application
    Filed: October 22, 2008
    Publication date: April 22, 2010
    Inventors: Mihaela Balseanu, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
  • Publication number: 20100096687
    Abstract: A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.
    Type: Application
    Filed: October 21, 2008
    Publication date: April 22, 2010
    Inventors: Mihaela BALSEANU, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
  • Patent number: 7670924
    Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.
    Type: Grant
    Filed: January 22, 2008
    Date of Patent: March 2, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Alexandros T. Demos, Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad
  • Patent number: 7611996
    Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.
    Type: Grant
    Filed: March 21, 2005
    Date of Patent: November 3, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Francimar Schmitt, Yi Zheng, Kang Sub Yim, Sang H. Ahn, Lester A. D'Cruz, Dustin W. Ho, Alexandros T. Demos, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090269923
    Abstract: A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.
    Type: Application
    Filed: April 25, 2008
    Publication date: October 29, 2009
    Inventors: Sang M. Lee, Yong-Won Lee, Meiyee Shek, Li-Qun Xia, Derek R. Witty
  • Publication number: 20090263972
    Abstract: A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.
    Type: Application
    Filed: March 31, 2009
    Publication date: October 22, 2009
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Mihaela Balseanu, Christopher D. Bencher, Yongmei Chen, Li Yan Miao, Victor Nguyen, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
  • Patent number: 7547643
    Abstract: Adhesion of a porous low K film to an underlying barrier layer is improved by forming an intermediate layer lower in carbon content, and richer in silicon oxide, than the overlying porous low K film. This adhesion layer can be formed utilizing one of a number of techniques, alone or in combination. In one approach, the adhesion layer can be formed by introduction of a rich oxidizing gas such as O2/CO2/etc. to oxidize Si precursors immediately prior to deposition of the low K material. In another approach, thermally labile chemicals such as alpha-terpinene, cymene, and any other non-oxygen containing organics are removed prior to low K film deposition. In yet another approach, the hardware or processing parameters, such as the manner of introduction of the non-silicon containing component, may be modified to enable formation of an oxide interface prior to low K film deposition.
    Type: Grant
    Filed: January 28, 2005
    Date of Patent: June 16, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Francimar Schmitt, Alexandros T. Demos, Derek R. Witty, Hichem M'Sadd, Sang H. Ahn, Lester A. D'Cruz, Khaled A. Elsheref, Zhenjiang Cui
  • Publication number: 20090107626
    Abstract: Embodiments described herein provide a method of processing a substrate. The method includes depositing an interface adhesion layer between a conductive material and a dielectric material such that the interface adhesion layer provides increased adhesion between the conductive material and the dielectric material. In one embodiment a method for processing a substrate is provided. The method comprises depositing an interface adhesion layer on a substrate comprising a conductive material, exposing the interface adhesion layer to a nitrogen containing plasma, and depositing a dielectric layer on the interface adhesion layer after exposing the interface adhesion layer to the nitrogen containing plasma.
    Type: Application
    Filed: October 24, 2008
    Publication date: April 30, 2009
    Inventors: Yong-Won Lee, Sang M. Lee, Meiyee(Maggie Le) Shek, Weifeng Ye, Li-Qun Xia, Derek R. Witty, Thomas Nowak, Juan Carlos Rocha-Alvarez, Jigang Li
  • Publication number: 20090104764
    Abstract: A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.
    Type: Application
    Filed: October 22, 2007
    Publication date: April 23, 2009
    Applicant: Applied Materials, Inc.
    Inventors: Li-Qun Xia, Mihaela Balseanu, Victor Nguyen, Derek R. Witty, Hichem M'Saad, Haichun Yang, Xinliang Lu, Chien-Teh Kao, Mei Chang
  • Publication number: 20090093128
    Abstract: Methods for high temperature deposition an amorphous carbon film with improved step coverage are provided. In one embodiment, a method for of depositing an amorphous carbon film includes providing a substrate in a process chamber, heating the substrate at a temperature greater than 500 degrees Celsius, supplying a gas mixture comprising a hydrocarbon compound and an inert gas into the process chamber containing the heated substrate, and depositing an amorphous carbon film on the heated substrate having a stress of between 100 mega-pascal (MPa) tensile and about 100 mega-pascal (MPa) compressive.
    Type: Application
    Filed: October 8, 2007
    Publication date: April 9, 2009
    Inventors: MARTIN JAY SEAMONS, Yoganand N. Saripalli, Kwangduk Douglas Lee, Bok Hoen Kim, Visweswaren Sivaramakrishnan, Wendy H. Yeh, Josephine Ju-Hwei Chang Liu, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090093100
    Abstract: The present invention generally provides a method for forming multilevel interconnect structures, including multilevel interconnect structures that include an air gap. One embodiment provides a method for forming conductive lines in a semiconductor structure comprising forming trenches in a first dielectric layer, wherein air gaps are to be formed in the first dielectric layer, depositing a conformal dielectric barrier film in the trenches, wherein the conformal dielectric barrier film comprises a low k dielectric material configured to serve as a barrier against a wet etching chemistry used in forming the air gaps in the first dielectric layer, depositing a metallic diffusion barrier film over the conformal low k dielectric layer, and depositing a conductive material to fill the trenches.
    Type: Application
    Filed: October 9, 2007
    Publication date: April 9, 2009
    Inventors: Li-Qun Xia, Huiwen Xu, Mihaela Balseanu, Meiyee (Maggie Le) Shek, Derek R. Witty, Hichem M'Saad
  • Publication number: 20090093132
    Abstract: The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.
    Type: Application
    Filed: October 9, 2007
    Publication date: April 9, 2009
    Inventors: HUIWEN XU, Yijun Liu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
  • Patent number: 7514125
    Abstract: Methods of making an article having a protective coating for use in semiconductor applications are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.
    Type: Grant
    Filed: February 28, 2007
    Date of Patent: April 7, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Deenesh Padhi, Chiu Chan, Sudha Rathi, Ganesh Balasubramanian, Jianhua Zhou, Karthik Janakiraman, Martin J. Seamons, Visweswaren Sivaramakrishnan, Derek R. Witty, Hichem M'Saad
  • Patent number: 7501354
    Abstract: Nano-porous low dielectric constant films are deposited utilizing materials having reactive by-products readily removed from a processing chamber by plasma cleaning. In accordance with one embodiment, an oxidizable silicon containing compound is reacted with an oxidizable non-silicon component having thermally labile groups, in a reactive oxygen ambient and in the presence of a plasma. The deposited silicon oxide film is annealed to form dispersed microscopic voids or pores that remain in the nano-porous silicon. Oxidizable non-silicon components with thermally labile groups that leave by-products readily removed from the chamber, include but are not limited to, limonene, carene, cymene, fenchone, vinyl acetate, methyl methacrylate, ethyl vinyl ether, tetrahydrofuran, furan, 2,5 Norbornadiene, cyclopentene, cyclopentene oxide, methyl cyclopentene, 2-cyclopentene-1-one, and 1-butene.
    Type: Grant
    Filed: September 9, 2005
    Date of Patent: March 10, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Dustin W. Ho, Derek R. Witty, Helen R. Armer, Hichem M'Saad