Patents by Inventor Derek R. Witty
Derek R. Witty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110298099Abstract: A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.Type: ApplicationFiled: June 4, 2010Publication date: December 8, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Yong-Won LEE, Vladimir Zubkov, Mei-Yee SHEK, Li-Qun XIA, Prahallad IYENGAR, Sanjeev BALUJA, Scott A. HENDRICKSON, Juan Carlos ROCHA-ALVAREZ, Thomas NOWAK, Derek R. WITTY
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Patent number: 7964442Abstract: The present invention generally provides a method for forming a dielectric barrier with lowered dielectric constant, improved etching resistivity and good barrier property. One embodiment provides a method for processing a semiconductor substrate comprising flowing a precursor to a processing chamber, wherein the precursor comprises silicon-carbon bonds and carbon-carbon bonds, and generating a low density plasma of the precursor in the processing chamber to form a dielectric barrier film having carbon-carbon bonds on the semiconductor substrate, wherein the at least a portion of carbon-carbon bonds in the precursor is preserved in the low density plasma and incorporated in the dielectric barrier film.Type: GrantFiled: October 9, 2007Date of Patent: June 21, 2011Assignee: Applied Materials, Inc.Inventors: Huiwen Xu, Yijun Liu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
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Publication number: 20110104400Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.Type: ApplicationFiled: January 10, 2011Publication date: May 5, 2011Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
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Publication number: 20110090613Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.Type: ApplicationFiled: November 19, 2010Publication date: April 21, 2011Inventors: Ganesh Balasubramanian, Amit Bansal, Eller Y. Juco, Mohamad Ayoub, Hyung-Joon Kim, Karthik Janakiraman, Sudha Rathi, Deenesh Padhi, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad, Anton Baryshnikov, Chiu Chan, Shuang Liu
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Patent number: 7871926Abstract: A method for forming a structure includes forming at least one feature across a surface of a substrate. A nitrogen-containing dielectric layer is formed over the at least one feature. A first portion of the nitrogen-containing layer on at least one sidewall of the at least one feature is removed at a first rate and a second portion of the nitrogen-containing layer over the substrate adjacent to a bottom region of the at least one feature is removed at a second rate. The first rate is greater than the second rate. A dielectric layer is formed over the nitrogen-containing dielectric layer.Type: GrantFiled: October 22, 2007Date of Patent: January 18, 2011Assignee: Applied Materials, Inc.Inventors: Li-Qun Xia, Mihaela Balseanu, Victor Nguyen, Derek R. Witty, Hichem M'Saad, Haichun Yang, Xinliang Lu, Chien-Teh Kao, Mei Chang
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Patent number: 7867578Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.Type: GrantFiled: June 28, 2006Date of Patent: January 11, 2011Assignee: Applied Materials, Inc.Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
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Patent number: 7816205Abstract: A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.Type: GrantFiled: October 22, 2008Date of Patent: October 19, 2010Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
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Patent number: 7802538Abstract: A method of forming a graded dielectric layer on an underlying layer including flowing a mixture of a silicon-carbon containing gas, an oxygen containing gas and a carrier gas through a showerhead comprising a blocking plate and a faceplate to form an oxide rich portion of the graded dielectric layer, where the silicon-carbon containing gas has an initial flow rate, flowing the silicon-carbon containing gas at a first intermediate flow rate for about 0.5 seconds or longer, where the first intermediate flow rate is higher than the initial flow rate, and flowing the silicon-carbon containing gas at a fastest flow rate higher than the first intermediate flow rate to form a carbon rich portion of the graded dielectric layer.Type: GrantFiled: December 8, 2006Date of Patent: September 28, 2010Assignee: Applied Materials, Inc.Inventors: Deenesh Padhi, Sohyun Park, Ganesh Balasubramanian, Juan Carlos Rocha-Alvarez, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
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Publication number: 20100233633Abstract: Methods for processing a substrate with a boron rich film are provided. A patterned layer of boron rich material is deposited on a substrate and can be used as an etch stop. By varying the chemical composition, the selectivity and etch rate of the boron rich material can be optimized for different etch chemistries. The boron rich materials can be deposited over a layer stack substrate in multiple layers and etched in a pattern. The exposed layer stack can then be etched with multiple etch chemistries. Each of the boron rich layers can have a different chemical composition that is optimized for the multiple etch chemistries.Type: ApplicationFiled: May 24, 2010Publication date: September 16, 2010Applicant: Applied Materials, Inc.Inventors: Victor Nguyen, Yi Chen, Mihaela Balseanu, Isabelita Roflox, Li-Qun Xia, Derek R. Witty
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Patent number: 7790635Abstract: A method for forming a compressive stress carbon-doped silicon nitride layer is provided. The method includes forming an initiation layer and a bulk layer thereon, wherein the bulk layer has a compressive stress of between about ?0.1 GPa and about ?10 GPa. The initiation layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor and optionally a nitrogen and/or source but does not include hydrogen gas. The bulk layer is deposited from a gas mixture that includes a silicon and carbon-containing precursor, a nitrogen source, and hydrogen gas. The initiation layer is a thin layer that allows good transfer of the compressive stress of the bulk layer therethrough to an underlying layer, such as a channel of a transistor.Type: GrantFiled: December 14, 2006Date of Patent: September 7, 2010Assignee: Applied Materials, Inc.Inventors: Mihaela Balseanu, Victor T. Nguyen, Li-Qun Xia, Vladimir Zubkov, Derek R. Witty, Hichem M'Saad
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Publication number: 20100151671Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.Type: ApplicationFiled: March 1, 2010Publication date: June 17, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Alexandros T. Demos, Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad
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Patent number: 7704816Abstract: Methods of forming boron-containing films are provided. The methods include introducing a boron-containing precursor into a chamber and depositing a network comprising boron-boron bonds on a substrate by thermal decomposition or a plasma process. The network may be post-treated to remove hydrogen from the network and increase the stress of the resulting boron-containing film. The boron-containing films have a stress between about ?10 GPa and 10 GPa and may be used as boron source layers or as strain-inducing layers.Type: GrantFiled: July 11, 2008Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Jeong-Uk Huh, Mihaela Balseanu, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
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Publication number: 20100096687Abstract: A flash memory device and methods of forming a flash memory device are provided. The flash memory device includes a doped silicon nitride layer having a dopant comprising carbon, boron or oxygen. The doped silicon nitride layer generates a higher number and higher concentration of nitrogen and silicon dangling bonds in the layer and provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.Type: ApplicationFiled: October 21, 2008Publication date: April 22, 2010Inventors: Mihaela BALSEANU, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
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Publication number: 20100098884Abstract: Methods of depositing boron-containing liner layers on substrates involve the formation of a bilayer including an initiation layer which includes barrier material to inhibit the diffusion of boron from the bilayer into the underlying substrate.Type: ApplicationFiled: June 22, 2009Publication date: April 22, 2010Applicant: Applied Materials, Inc.Inventors: MIHAELA BALSEANU, Li-Qun Xia, Derek R. Witty, Yi Chen
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Publication number: 20100099247Abstract: A methods of forming a flash memory device are provided. The flash memory device comprises a silicon dioxide layer on a substrate and a silicon nitride layer that is formed on the silicon dioxide layer. The properties of the silicon nitride layer can be modified by any of: exposing the silicon nitride layer to ultraviolet radiation, exposing the silicon nitride layer to an electron beam, and by plasma treating the silicon nitride layer. A dielectric material is deposited on the silicon nitride layer and a conductive date is formed over the dielectric material. The flash memory device with modified silicon nitride layer provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.Type: ApplicationFiled: October 22, 2008Publication date: April 22, 2010Inventors: Mihaela Balseanu, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
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Publication number: 20100096688Abstract: A flash memory device and method of forming a flash memory device are provided. The flash memory device includes a silicon nitride layer having a compositional gradient in which the ratio of silicon to nitrogen varies through the thickness of the layer. The silicon nitride layer having a compositional gradient of silicon and nitrogen provides an increase in charge holding capacity and charge retention time of the unit cell of a non-volatile memory device.Type: ApplicationFiled: October 22, 2008Publication date: April 22, 2010Inventors: Mihaela Balseanu, Vladimir Zubkov, Li-Qun Xia, Atif Noori, Reza Arghavani, Derek R. Witty, Amir Al-Bayati
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Patent number: 7670924Abstract: Methods are provided for forming a structure that includes an air gap. In one embodiment, a method is provided for forming a damascene structure comprises depositing a porous low dielectric constant layer by a method including reacting an organosilicon compound and a porogen-providing precursor, depositing a porogen-containing material, and removing at least a portion of the porogen-containing material, depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor, forming a feature definition in the organic layer and the porous low dielectric constant layer, filing the feature definition with a conductive material therein, depositing a mask layer on the organic layer and the conductive material disposed in the feature definition, forming apertures in the mask layer to expose the organic layer, removing a portion or all of the organic layer through the apertures, and forming an air gap adjacent the conductive material.Type: GrantFiled: January 22, 2008Date of Patent: March 2, 2010Assignee: Applied Materials, Inc.Inventors: Alexandros T. Demos, Li-Qun Xia, Bok Hoen Kim, Derek R. Witty, Hichem M'Saad
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Patent number: 7611996Abstract: Embodiments in accordance with the present invention relate to multi-stage curing processes for chemical vapor deposited low K materials. In certain embodiments, a combination of electron beam irradiation and thermal exposure steps may be employed to control selective outgassing of porogens incorporated into the film, resulting in the formation of nanopores. In accordance with one specific embodiment, a low K layer resulting from reaction between a silicon-containing component and a non-silicon containing component featuring labile groups, may be cured by the initial application of thermal energy, followed by the application of radiation in the form of an electron beam.Type: GrantFiled: March 21, 2005Date of Patent: November 3, 2009Assignee: Applied Materials, Inc.Inventors: Francimar Schmitt, Yi Zheng, Kang Sub Yim, Sang H. Ahn, Lester A. D'Cruz, Dustin W. Ho, Alexandros T. Demos, Li-Qun Xia, Derek R. Witty, Hichem M'Saad
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Publication number: 20090269923Abstract: A method and apparatus for processing a substrate is provided. The method of processing a substrate includes providing a substrate comprising a conductive material, performing a pre-treatment process on the conductive material, flowing a silicon based compound on the conductive material to form a silicide layer, performing a post treatment process on the silicide layer, and depositing a barrier dielectric layer on the substrate.Type: ApplicationFiled: April 25, 2008Publication date: October 29, 2009Inventors: Sang M. Lee, Yong-Won Lee, Meiyee Shek, Li-Qun Xia, Derek R. Witty
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Publication number: 20090263972Abstract: A method and apparatus are provided to form spacer materials adjacent substrate structures. In one embodiment, a method is provided for processing a substrate including placing a substrate having a substrate structure adjacent a substrate surface in a deposition chamber, depositing a spacer layer on the substrate structure and substrate surface, and etching the spacer layer to expose the substrate structure and a portion of the substrate surface, wherein the spacer layer is disposed adjacent the substrate structure. The spacer layer may comprise a boron nitride material. The spacer layer may comprise a base spacer layer and a liner layer, and the spacer layer may be etched in a two-step etching process.Type: ApplicationFiled: March 31, 2009Publication date: October 22, 2009Applicant: APPLIED MATERIALS, INC.Inventors: Mihaela Balseanu, Christopher D. Bencher, Yongmei Chen, Li Yan Miao, Victor Nguyen, Isabelita Roflox, Li-Qun Xia, Derek R. Witty