Abstract: A selective sidewall diffusion process using doped SOG. A substrate is processed to form raised portions or pedestals, having sidewalls, and trenches. A first layer, either a doped SOG layer or undoped oxide layer, may be deposited onto the substrate adjacent the sidewalls. The first layer is densified. A second layer may be deposited on the first layer. The second layer is a doped SOG layer. The second layer is densified and the dopant is driven into the sidewalls to form shallow junctions.

Abstract: There is disclosed a method for producing a spin-on glass composition with a high carbon content for use as coating layers on substrates such as semiconductor silicon wafers. Also provided are spin-on glass compositions with polyorganosiloxanes having at least 30 wt.% carbon. These spin-on glass compositions show improved resistance to O.sub.2 concentration variations during etching and have an extended shelf-life of more than one year. Methods of using these spin-on glass compositions and semiconductor products produced therefrom are also provided.

Abstract: There is disclosed spin-on glass compositions, preferably for use as coating layers on substrates such as semiconductor silicon wafers, which comprise a solution of a crosslinked polyorganosiloxane having a silane adhesion promoter incorporated therein preferably with a glycoether, glycolether acetate or similar solvent. Also provided are methods for preparing these spin-on glass compositions from polyorganosiloxanes preferably having at least 30 wt. % carbon. These spin-on glass compositions (a) provide layers with improved resistance to O.sub.2 concentration variations during etching and are stable at temperatures of up to 500.degree. C. without decomposition, (b) have an extended shelf-life of more than one year, and (c) can fill small spaces with high aspect ratios with low shrinkage and low stress.

Abstract: There is disclosed a dyed, spin-on glass composition with a high carbon content for use in providing antireflective planarizing layers on substrates such as semiconductor silicon wafers. These layers can be used as hard masks by etching patterns therein. These hard masks can be used in multilayer resists and in making lithography masks. Methods for producing these hard-masks are also provided.

Abstract: A process for forming a thin sealing layer of silicon nitride directly upon a silicon substrate to minimize bird's beak encroachment. The process employs in situ fabrication whereby the native oxide is removed from the silicon substrate by etching the hydrogen or hydrogen chloride and followed in direct succession, and in the absence of exposure to an oxidizing environment, with the deposition of a silicon nitride layer by LPCVD. Bird's beak encroachment is incrementally reduced by the absence of the native oxide layer as a path for oxygen species movement during the field oxide growth.