Abstract: A thin film transistor (TFT) array substrate has a plurality of pixel units. A plurality of signal lines and a plurality of scanning lines are formed on the substrate. Each of the plurality of paired and adjacent signal lines and each of the plurality of scanning lines are arranged in a matrix form to define each pixel unit. Each pixel unit includes at least two pixels, which are abreast of the paired and adjacent signal lines. This structure thereby provides a TFT array substrate with high aperture ratio pixel structure.

Abstract: An IPS-LCD having a compensation electrode structure. In each pixel area, at least two common electrodes extending in a first Y-direction and at least one pixel electrode extending in a second Y-direction are inter-digitated with each other. Also, at least two compensation electrodes extending in the Y-direction are patterned on the same plane with the pixel electrode, and overlap the two common electrodes, respectively. A first interval between the first compensation electrode and pixel electrode is equal to a second interval between the pixel electrode and the second compensation electrode.

Abstract: The present invention discloses a photo mask employing in a TFT-LCD fabrication using 4-mask process. The disclosed photo mask comprises a transparent substrate and a shielding pattern formed thereon, wherein the shielding pattern includes a pair of first shielding patterns each having the rectangular shape disposed with separation to cover source and drain formation regions, a pair of second shielding patterns of a bar type disposed between the first shielding patterns and third shielding patterns of a bar type disposed on lower and upper portions of the first and the second shielding patterns to make a clear division between a light transmittance region and a light shielding region on the edge of a channel region.

Abstract: A structure of the TFT array includes an additional row of pixel electrode coupled to the last scanning line for the last pixel electrode row. The last pixel electrode row has overlap with the last scanning line to form the equivalent storage capacitor. In addition, the liquid crystal exists on a portion of the pixel electrode row without overlapping with the last scanning line, resulting in the liquid crystal capacitor, which equivalent to the liquid crystal capacitor for the other scanning lines. The pixel electrode row can compensate the miss capacitance from the storage capacitor and the liquid crystal capacitor for the last scanning line. As a result, the difference of capacitive effect for the edge scanning line and the other scanning lines can be balanced, so as to improve the displaying quality.

Abstract: A cutting method of a tap carrier package of a liquid crystal display. The cutting method cuts a film comprising a first straight layout along a predetermined direction on a wiring layer comprising a second straight layout along the predetermined direction and a oblique layout, the method comprises the following steps. First, a breach is formed by cutting apart of the first straight layout on the film. Finally, the film is fastened on the wiring layer. Thus, the remaining first straight layout is only connected to the straight layout and the oblique layout is exposed through the breach.

Abstract: A structure of the TFT array includes an additional row of pixel electrode coupled to the last scanning line for the last pixel electrode row. The last pixel electrode row has overlap with the last scanning line to form the equivalent storage capacitor. In addition, the liquid crystal exists on a portion of the pixel electrode row without overlapping with the last scanning line, resulting in the liquid crystal capacitor, which equivalent to the liquid crystal capacitor for the other scanning lines. The pixel electrode row can compensate the miss capacitance from the storage capacitor and the liquid crystal capacitor for the last scanning line. As a result, the difference of capacitive effect for the edge scanning line and the other scanning lines can be balanced, so as to improve the displaying quality.

Abstract: The present invention discloses a method for manufacturing thin film transistor liquid crystal display including the following steps so as to form simultaneously a via hole for contacting a drain electrode and a pixel electrode mutually and the channel of thin film transistor: forming sequentially gate insulation layer, amorphous silicon layer for channel and doped semiconductor layer for ohmic contact, and metal layer for source/drain electrode on the back substrate where the gate electrode and the storage capacitor electrode have been formed; patterning the metal layer for source/drain electrode and the doped semiconductor layer for ohmic contact through a second photolithograph process so that the source electrode, the drain electrode, and the ohmic contacts thereof may be formed; forming a passivation layer on the back substrate where the source electrode and the drain electrode have been formed; patterning the passivation layer, the amorphous silicon layer for channel, and the gate insulation layer thro

Abstract: Disclosed is a method of fabricating a liquid crystal display with a high aperture ratio comprising the steps of: forming a gate bus line including a gate electrode on a transparent insulating substrate and at the same time, forming a storage capacitor electrode in parallel with the gate bus line; depositing a gate insulating layer on the resulting entire surface; forming a semiconductor layer on the gate insulating layer over the gate electrode; forming a data line including source/drain electrodes on the semiconductor layer, thereby completing a thin film transistor; depositing an insulating layer on the resulting lower substrate, wherein the thickness of the insulating layer region formed over the storage capacitor electrode is thinner than that formed over the other part; forming a contact hole by selectively etching the insulating layer in order to expose a predetermined part of the drain electrode; and forming a pixel electrode on the insulating layer to be in contact with the exposed drain electrode.

Abstract: The present invention discloses a photo mask employing in a TFT—LCD fabrication using 4-mask process. The disclosed photo mask comprises a transparent substrate and a shielding pattern formed thereon, wherein the shielding pattern includes a pair of first shielding patterns of a box type disposed with separation to cover source and drain formation regions, a pair of second shielding patterns of a bar type disposed between the first shielding patterns and third shielding patterns of a bar type disposed on lower and upper portions of the first and the second shielding patterns to make a clear division between a light transmittance region and a light shielding region on the edge of a channel region.

Abstract: The present invention discloses a method for manufacturing thin film transistor liquid crystal display including the following steps so as to form simultaneously a via hole for contacting a drain electrode and a pixel electrode mutually and the channel of thin film transistor:

Abstract: Disclosed is a liquid crystal display which comprise: a transparent insulating substrate; a plurality of source bus lines and a plurality of gate bus lines arranged in rows and columns at right angles to each other on a surface of the transparent insulating substrate; a plurality of thin film transistors formed on the surface of the transparent insulating substrate, each connected to the source bus lines and the gate bus lines in the vicinity of their intersection and each comprising source, drain and gate electrodes; a plurality of pixel electrodes comprising first pixel electrodes and second pixel electrodes formed in alternative array at different level layers of upper and lower layers on the surface of the transparent insulating substrate from each other, and each connected to the drain electrode of the thin film transistors, wherein the first pixel electrodes are formed in even columns of the lower level layer and comprise first extended portions overlapped with at least the source bus lines at both side

Abstract: Disclosed is a liquid crystal display device having a pixel electrode and a counter electrode formed on one substrate device. The device includes: a first transparent substrate having a conductive high molecular film formed on the pixel electrode and the counter electrode; a second transparent substrate arranged parallel to the first transparent substrate; and a liquid crystal material disposed between the first and second transparent substrates, for selectively scattering or transmitting light in response to a prescribed input.

Abstract: Disclosed is a liquid crystal display device comprising a substrate; a plurality of pixel electrodes arranged in matrix; a plurality of data bus lines, each of the data bus lines being arranged between two adjacent pixel electrodes in row direction; a plurality of gate bus lines spaced from each other, each of the gate bus lines being arranged between two adjacent pixel electrodes in column direction and being intersected with each of the data bus line; and a plurality of thin film transistors arranged in matrix on the substrate, wherein each of the thin film transistors has a gate electrode formed on the substrate to be connected to the gate bus line, a source electrode extended from one part of the gate bus line up to a crossing portion of the data and gate bus lines to be connected to the data bus line, and a drain electrode extended from the other part of the gate electrode to the pixel electrode, and is arranged corresponding to each of the pixel electrodes.