Abstract: The present disclosure describes a method or forming vertical natural capacitor (VNCAP) and the resulting device. The method includes applying a patterned mask over an insulation layer. The method includes forming using the patterned mask, a dielectric trench in the insulation layer. The method includes depositing a high dielectric constant k (high k) layer in the dielectric trench. The method includes forming a first trench and a second trench in the high k dielectric layer. The high k dielectric layer is disposed between the first trench and the second trench. The method includes depositing metal in the first trench and the second trench.

Abstract: Methods for contacting a metal-insulator-metal (MIM) capacitor, as well as structures including a MIM capacitor. A dielectric layer is formed on an electrode of a metal-insulator-metal capacitor. A via is formed that extends vertically through the dielectric layer to the electrode. A conductive plug is formed in the via that contacts the electrode. The dielectric layer is comprised of a polymer, such as polyimide.