Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.

Abstract: A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

Abstract: In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.

Abstract: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.

Abstract: A method, apparatus and system with an electrically conductive through hole via of a composite material with a matrix forming a continuous phase and embedded particles, with a different material property than the matrix, forming a dispersed phase, the resulting composite material having a different material property than the matrix.

Abstract: Horizontal carbon nanotubes may be used for on-die routing and other applications. In one example, a catalyst is applied to a plurality of different points on a substrate. Carbon nanotubes are then grown vertically on the plurality of different points to form a plurality of vertical carbon nanotube structures on the substrate. The vertical carbon nanotuhe structures are then rolled to form horizontal carbon nanotube structures.

Abstract: Nano-scale particle paste may be used for on-die routing and other applications using deposition and inkjet printing. A metal paste is applied to a surface of a die to electrically couple two spaced apart connection points of the die. Alternatively, or in addition, the paste may contain carbon nanotubes. The paste may be used on other surfaces as well.

Abstract: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.

Abstract: In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.

Abstract: Embodiments of the invention provide a device with a die and a substrate having a similar coefficient of thermal expansion to that of the die. The substrate may comprise a silicon base layer. Build up layers may be formed on the side of the base layer further from the die.

Abstract: A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.

Abstract: In one embodiment, a package-to-package stack is assembled comprising a first integrated circuit package, and a second integrated circuit package which are mechanically and electrically connected using an interposer. In one embodiment, the interposer 106 includes columnar interconnects which may be fabricated by etching a conductive member such as copper foil, for example. In one application, the pitch or center to center spacing of the columnar interconnects may be defined by masking techniques to provide an interconnect pitch suitable for a particular application. In yet another aspect, etching rates may be controlled to provide height to width aspect ratios of the columnar interconnects which are suitable for various applications.

Abstract: A method of forming a via having a stress buffer collar, wherein the stress buffer collar can absorb stress resulting from a mismatch in the coefficients of thermal expansion of the surrounding materials. Other embodiments are described and claimed.

Abstract: An embodiment of the present invention is a technique to fabricate a metal interconnect. A first metal trace is printed on a die attached to a substrate or a cavity of a heat spreader in a package to electrically connect the first metal trace to a power contact in the substrate. A device is mounted on the first metal trace. The device receives power from the substrate when the package is powered.