Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a solvent system that comprises 1) a first organic solvent represented by formula (I), wherein R1 and R2 are alkyl groups of 3-8 carbons and the total number of carbons of R1 and R2 is greater than 6; and 2) a second organic solvent that is a C4 to C10 monovalent alcohol.

Abstract: Methods of treating the surface of a metal-containing hardmask used in the manufacture of semiconductors by contacting the hardmask surface with a composition capable of adjusting the water contact angle so as to substantially match that of subsequently applied organic coatings are provided.

Abstract: The invention provides a composition comprising at least the following A and B: A) a polymer comprising, in polymerized from, at least one “monomer that comprises at least one hydroxyl group;” and B) an organometal compound comprising at least one metal selected from Ti, Zr, Hf, Co, Mn, Zn, or combinations thereof, and wherein the organometal compound is present in an amount greater than 5 weight percent, based on the sum weight of A and B.

Abstract: Provided are photoresist compositions useful in forming photolithographic patterns by a negative tone development process. Also provided are methods of forming photolithographic patterns by a negative tone development process and substrates coated with the photoresist compositions. The photoresist compositions include one or more polymer additive that contains a basic moiety and which is substantially non-miscible with a resin component of the resist. The compositions, methods and coated substrates find particular applicability in the manufacture of semiconductor devices.

Abstract: This invention relates to new photoacid generator compounds and photoresist compositions that comprise such compounds. In particular, the invention relates to photoacid generator compounds that comprise base-cleavable groups.

Abstract: Compositions suitable for forming oxymetal hardmask layers are provided. Methods of forming oxymetal hardmask layers using such compositions are also provided, where the surface of the oxymetal hardmask layer formed has a water contact angle substantially matched to that of subsequently applied organic coatings.

Abstract: Topcoat layer compositions suitable for use in forming a topcoat layer over a layer of photoresist include: a matrix polymer which is aqueous alkali soluble; a first additive of mer which is aqueous alkali soluble and comprises polymerized units of a monomer of the following general formula (I): wherein: R1 is hydrogen or a C1 to C6 alkyl or fluoroalkyl group; R2 is a C3 to C8 branched alkylene group; and R3 is a C1 to C4 fluoroalkyl group; and wherein the first additive polymer is present in the composition in an amount less than the matrix polymer, and the first additive polymer has a lower surface energy than a surface energy of the matrix polymer; wherein a layer of the topcoat composition in a dried state has a water receding contact angle of from 75 to 85°. The compositions find particular applicability to immersion lithography processing.

Abstract: The invention provides a process for removing a film from a substrate, said process comprising applying a composition to the film, and wherein the composition comprises at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R?H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R?H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof. The invention also provides a composition comprising at least the following: a) water; and b) at least one compound selected from the following compounds (i-v): i) NR4HF2 (Formula 1), wherein R?H, alkyl, substituted alkyl, ii) NR4F (Formula 2), wherein R?H, alkyl, substituted alkyl, iii) HF (hydrofluoric acid), iv) H2SiF6 (hexafluorosilicic acid), or v) combinations thereof.

Abstract: The invention provides a composition comprising at least the following A and B: A) a polymer comprising, in polymerized from, at least one “monomer that comprises at least one hydroxyl group;” and B) an organometal compound comprising at least one metal selected from Ti, Zr, Hf, Co, Mn, Zn, or combinations thereof, and wherein the organometal compound is present in an amount greater than 5 weight percent, based on the sum weight of A and B.

Abstract: Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.

Abstract: A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L1, LN, Ra, Rb, Rc, and X are defined herein. The polymer is a useful component of a photoresist composition.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.

Abstract: This invention provides a composition containing an organometallic compound having a chromophore moiety in the metal polymer backbone which allows a wider range of n/k values such that substrate reflectivity can be controlled under various conditions.

Abstract: New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Abstract: Organoaluminum coating compositions are used to deposit films on various substrates, which films are subsequently cured to form oxide films useful in a variety of manufacturing applications, particularly where a gas barrier may be used.

Abstract: Coating compositions are used to deposit films on electronic device substrates, which films are subjected to conditions that form an oxymetal precursor material layer on a matrix precursor material layer, and then such layers are cured to form a cured oxymetal layer disposed on a cured matrix layer.

Abstract: Organoaluminum coating compositions are used to deposit films on various substrates, which films are subsequently cured to form oxide films useful in a variety of manufacturing applications, particularly where a gas barrier may be used.

Abstract: Disclosed herein is a method comprising disposing a first composition comprising a first block copolymer upon a substrate; where the first block copolymer comprises a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and disposing a second composition comprising an second copolymer upon a free surface of the first block copolymer; where the second copolymer comprises a surface free energy reducing moiety; where the surface free energy reducing moiety has a lower surface free energy than the first surface free energy and the second surface free energy; the second copolymer further comprising one or more moieties having an affinity to the first block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment.