Abstract: A semiconductor device is disclosed to include a plurality of cells. Each of the cells has a respective outer cell boundary defined to circumscribe the cell in an orthogonal manner. Also, each of the cells includes circuitry for performing one or more logic functions. This circuitry includes a plurality of conductive features defined in one or more levels of the cell. One or more of the conductive features in at least one level of a given cell is an encroaching feature positioned to encroach by an encroachment distance into an exclusion zone. The exclusion zone occupies an area within the cell defined by an exclusion distance extending perpendicularly inward into the given cell from a first segment of the outer cell boundary. The exclusion distance is based on a design rule distance representing a minimum separation distance required between conductive features in adjacently placed cells on the semiconductor device.

Abstract: A power controlling integrated circuit cell is provided within an integrated circuit power grid to selectively couple an unswitched power supply input to a switched power supply output. The power controlling integrated circuit cell also includes a power control signal input and a power control signal output for supporting the distribution through the integrated circuit of the power control signal. The power controlling integrated circuit cell has a power switching circuit responsive to a power control input signal received at the power control signal input to selectively connect the switched power supply output to the unswitched power supply input, and a power control signal buffer circuit responsive to the switched power supply output to drive a power control output signal from the power control signal output.

Abstract: A semiconductor chip is defined to include a logic block area having a first chip level in which layout features are placed according to a first virtual grate, and a second chip level in which layout features are placed according to a second virtual grate. A rational spatial relationship exists between the first and second virtual grates. A number of cells are placed within the logic block area. Each of the number of cells is defined according to an appropriate one of a number of cell phases. The appropriate one of the number of cell phases causes layout features in the first and second chip levels of a given placed cell to be aligned with the first and second virtual grates as positioned within the given placed cell.

Abstract: A power controlling integrated circuit cell is provided within an integrated circuit power grid to selectively couple an unswitched power supply input to a switched power supply output. The power controlling integrated circuit cell also includes a power control signal input and a power control signal output for supporting the distribution through the integrated circuit of the power control signal. The power controlling integrated circuit cell has a power switching circuit responsive to a power control input signal received at the power control signal input to selectively connect the switched power supply output to the unswitched power supply input, and a power control signal buffer circuit responsive to the switched power supply output to drive a power control output signal from the power control signal output.

Abstract: In an environment wherein a microprocessor can operate at several different voltage levels depending upon the instantaneous throughput of the microprocessor, a memory and memory adjustment circuit that permits operating the memory at a plurality of voltages in response to the microprocessor is disclosed. The memory and memory adjustment circuit sense the instantaneous operating voltage of the microprocessor and adjust the operating voltage of the memory in response thereto. The memory adjustment circuit more particularly increases or decreases the memory's bitline sense interval in response respectively to a decrease or increase in the memory's operating voltage.

Abstract: An embedded memory device having improved BISR capabilities is provided. The embedded memory device includes an internal clock signal for use in accessing a memory array having access to redundant memory cells during normal operation, and a stress clock signal, wherein each pulse of the stress clock signal is of a shorter duration than each pulse of the internal clock signal. Further included are a built-in self-test circuit that performs a built-in self-test using the stress clock signal, and a register that stores defective memory addresses detected by the built-in self-test circuit. Redundant control logic is also included that redirects memory access operations to the defective memory addresses to redundant memory cells.

Abstract: A column redundancy circuitry and a method for implementing the same are provided. One exemplary method provides routing for an access request addressed to a defective cell. The method includes providing a redundant column within a memory circuit, the redundant column in communication with a sense amplifier. Next, a defective cell of a memory circuit is located and the address is programmed. An access request is then processed, the access request containing the address of the defective cell Finally, the access request is routed to the redundant column through enable circuitry. Some notable advantages include the conservation of surface area of the memory circuit induced by locating the redundant column within the memory circuit. The externalization of the fuse box, Built In Self Repair region and the logic circuitry from the memory core also provide increased flexibility.

Abstract: In an environment wherein a microprocessor can operate at several different voltage levels depending upon the instantaneous throughput of the microprocessor, a memory and memory adjustment circuit that permits operating the memory at a plurality of voltages in response to the microprocessor is disclosed. The memory and memory adjustment circuit sense the instantaneous operating voltage of the microprocessor and adjust the operating voltage of the memory in response thereto. The memory adjustment circuit more particularly increases or decreases the memory's bitline sense interval in response respectively to a decrease or increase in the memory's operating voltage.

Abstract: A method and apparatus for improving the manufacturability of Integrated Circuits (ICs) formed on semiconductor dies is described. A plurality of different designs for some or all of the standard cells are made available to the circuit designer. Each different design may address a different problem associated with different manufacturing processes or a different design related yield limiter. Each of the design variants is characterized indicating its relative ease of manufacture, or it's yield sensitivity to certain IC design factors. The designer, typically with assistance from computer aided tools, can then select the standard cell variant for each of the cell used in the IC design that best addresses his or her design constraints. In other embodiments, variant versions of I/O cells and memory cells could also be created and made available to the designer in a similar fashion.

Abstract: A method for reducing leakage currents in integrated circuits and the integrated circuits with reduced leakage currents that result from this method are disclosed. The present invention determines which transistors in a standard logic cell (also known as a standard cell) are not critical with respect to the ultimate speed of operation of the standard logic cell. After determining which transistors do not critically impact the speed of the standard logic cell's operation, these designated transistors are designed with either lengthened channels or their channels are implanted. Both circuit design techniques will increase the threshold voltage (VT) of the transistors and thereby reduce their leakage current. Standard cells with high VT transistors in their non-critical circuit pathways exhibit reduced leakage currents when compared with known logic cells.

Abstract: A method and apparatus for improving the manufacturability of Integrated Circuits (ICs) formed on semiconductor dies is described. A plurality of different designs for some or all of the standard cells are made available to the circuit designer. Each different design may address a different problem associated with different manufacturing processes or a different design related yield limiter. Each of the design variants is characterized indicating its relative ease of manufacture, or it's yield sensitivity to certain IC design factors. The designer, typically with assistance from computer aided tools, can then select the standard cell variant for each of the cell used in the IC design that best addresses his or her design constraints. In other embodiments, variant versions of I/O cells and memory cells could also be created and made available to the designer in a similar fashion.

Abstract: A method for testing a circuit is provided. The method includes providing a normal internal clock signal for use in accessing functional logic, where the functional logic has access to redundant functional logic during normal operation. The method then applies a stress clock signal to the functional logic, and each pulse of the stress clock signal is of a shorter duration than each pulse of the normal internal clock signal. Based on the applied stress clock signal, the method identifies logic elements of the functional logic that fail to operate as intended.

Abstract: A method for reducing leakage currents in integrated circuits and the integrated circuits with reduced leakage currents that result from this method are disclosed. The present invention determines which transistors in a standard logic cell (also known as a standard cell) are not critical with respect to the ultimate speed of operation of the standard logic cell. After determining which transistors do not critically impact the speed of the standard logic cell's operation, these designated transistors are designed with either lengthened channels or their channels are implanted. Both circuit design techniques will increase the threshold voltage (VT) of the transistors and thereby reduce their leakage current. Standard cells with high VT transistors in their non-critical circuit pathways exhibit reduced leakage currents when compared with known logic cells.

Abstract: A method for testing a circuit is provided. The method includes providing a normal internal clock signal for use in accessing functional logic, where the functional logic has access to redundant functional logic during normal operation. The method then applies a stress clock signal to the functional logic, and each pulse of the stress clock signal is of a shorter duration than each pulse of the normal internal clock signal. Based on the applied stress clock signal, the method identifies logic elements of the functional logic that fail to operate as intended.

Abstract: A method for identifying faulty and weak memory cells is provided. A normal internal clock signal for use in accessing a memory array is provided, wherein the memory array may contain redundant memory cells that can be accessed during normal operation. In addition, a test is performed on the memory array using a stress clock signal. Each pulse of the stress clock signal is of a shorter duration than each pulse of the normal internal clock signal. In this manner, memory cells that fail the test using the stress clock signal are identified as non-usable memory cells. In some embodiments, the normal internal clock signal is based on required read and write times for the memory cells of the memory array and a margin added to the required read and write times. Each pulse of the stress clock signal can be approximately equal to each pulse of the normal internal clock signal minus the margin.

Abstract: A method for identifying faulty and weak memory cells is provided. A normal internal clock signal for use in accessing a memory array is provided, wherein the memory array may contain redundant memory cells that can be accessed during normal operation. In addition, a test is performed on the memory array using a stress clock signal. Each pulse of the stress clock signal is of a shorter duration than each pulse of the normal internal clock signal. In this manner, memory cells that fail the test using the stress clock signal are identified as non-usable memory cells. In some embodiments, the normal internal clock signal is based on required read and write times for the memory cells of the memory array and a margin added to the required read and write times. Each pulse of the stress clock signal can be approximately equal to each pulse of the normal internal clock signal minus the margin.

Abstract: Disclosed is a semiconductor standard cell architecture with local interconnect. The standard cell architecture includes a semiconductor substrate having diffusion regions that are designated for source and drain regions of a functional circuit. The standard cell also includes a polysilicon layer that is patterned to define gate electrodes and interconnections of the semiconductor standard cell architecture. In addition, the standard cell includes a local interconnect metallization layer that is patterned into a plurality of local interconnect metallization lines that are configured to be disposed over the semiconductor substrate and are further configured to substantially interconnect the source and drain regions and gate electrodes to define the functional circuit. The plurality of local interconnect metallization lines are further designed to incorporate local interconnect metallization pins that are connection points for interconnecting the functional circuit to another functional circuit.

Abstract: Disclosed are methods for designing standard cell transistor layouts for minimizing transistor delays and for minimizing power consumption. The method of minimizing transistor delays includes defining a transistor model for a P-type transistor and an N-type transistor of a CMOS standard cell. The method then includes minimizing a ratio between the P-type transistor and the N-type transistor. The ratio is defined by dividing a P-type gate width of the P-type transistor by an N-type gate width of the N-type transistor. The optimizing is performed by substantially minimizing an average delay for the transistor structure. In this embodiment, the CMOS standard cell will define a transistor structure that is implemented to make a logic circuit. The CMOS standard cell is one of a library of standard cells, where each standard cell defines a particular logic circuit.

Abstract: Disclosed is a semiconductor standard cell architecture with local interconnect. The standard cell architecture includes a semiconductor substrate having diffusion regions that are designated for source and drain regions of a functional circuit. The standard cell also includes a polysilicon layer that is patterned to define gate electrodes and interconnections of the semiconductor standard cell architecture. In addition, the standard cell includes a local interconnect metallization layer that is patterned into a plurality of local interconnect metallization lines that are configured to be disposed over the semiconductor substrate and are further configured to substantially interconnect the source and drain regions and gate electrodes to define the functional circuit. The plurality of local interconnect metallization lines are further designed to incorporate local interconnect metallization pins that are connection points for interconnecting the functional circuit to another functional circuit.

Abstract: Disclosed is a semiconductor standard cell architecture with local interconnect. The standard cell architecture includes a semiconductor substrate having diffusion regions that are designated for source and drain regions of a functional circuit. The standard cell also includes a polysilicon layer that is patterned to define gate electrodes and interconnections of the semiconductor standard cell architecture. In addition, the standard cell includes a local interconnect metallization layer that is patterned into a plurality of local interconnect metallization lines that are configured to be disposed over the semiconductor substrate and are further configured to substantially interconnect the source and drain regions and gate electrodes to define the functional circuit. The plurality of local interconnect metallization lines are further designed to incorporate local interconnect metallization pins that are connection points for interconnecting the functional circuit to another functional circuit.