Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, wherein A is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, n2 is a refractive index of the second transparent dielectric layer and is greater than n1, and n2 is lower than a refractive index of the second conductivity type semiconductor layer. A light-emitting apparatus including the aforesaid flip-chip light-emitting diode is also provided.

Abstract: A flip-chip light-emitting diode includes a first conductivity type semiconductor layer, a light-emitting layer, a second conductivity type semiconductor layer, a first transparent dielectric layer, a second transparent dielectric layer, and a distributed Bragg reflector (DBR) structure which are sequentially stacked. The first transparent dielectric layer has a thickness greater than ?/2n1, and the second transparent dielectric layer has a thickness of m?/4n2, wherein m is an odd number, ? is an emission wavelength of the light-emitting layer, n1 is a refractive index of the first transparent dielectric layer, and n2 is a refractive index of the second transparent dielectric layer and is greater than n1.

Abstract: This disclosure provides a method, apparatus, terminal device and medium for object processing. The method of object processing includes: displaying a processing interface, a plurality of levels of processing attributes being displayed in the processing interface, the processing interface displaying a storage device corresponding to a current processing attribute that is currently activated; after the current processing attribute meets a preset condition, processing an object to be processed with the current processing attribute, and continuing to activate a next processing attribute as a current processing attribute; displaying a switched storage device after receiving a switching operation on a storage device displayed in the processing interface.

Abstract: A light-emitting diode and a light-emitting device are provided. In the light-emitting diode, a first mesa including an active layer satisfies a perimeter-to-area ratio 2 ? ? ? s s ? ? ? 2 ? ( ( s L ? 1 ) + L ? 1 ) s under a same light-emitting area. Under the same light-emitting area of the active layer, an exposed portion on a sidewall of the first mesa is less, and thus problems of light absorption and non-radiative recombination caused by a defect of the sidewall of a small-sized light-emitting diode are reduced during working at a low current. In addition, a non-planar light-emitting surface can improve a light-emitting probability of the sidewall of the light-emitting diode, and an external light-emitting efficiency of the light-emitting diode is further improved.

Abstract: A light-emitting device includes a semiconductor epitaxial unit, a first contact electrode, and a second contact electrode. The semiconductor epitaxial unit includes a first semiconductor layer, a second semiconductor layer, and an active layer. The first contact electrode and the second contact electrode are disposed on the semiconductor epitaxial unit, and are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. The first contact electrode includes an ohmic contact layer and a first electrode barrier layer. The second contact electrode includes an ohmic contact layer and a second electrode barrier layer. The ohmic contact layer of the first contact electrode includes a first ohmic contact layer. The ohmic contact layer of the second contact electrode includes a second ohmic contact layer. The second contact electrode further includes another first ohmic contact layer disposed between the second ohmic contact layer and the second electrode barrier layer.

Abstract: A light emitting diode and a light emitting device are provided. The light emitting diode includes: a semiconductor epitaxial stacked layer at least including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer and formed with a first mesa; a first contact electrode located on the first mesa and electrically connected to the first conductive type semiconductor layer; a second contact electrode located on the second conductive type semiconductor layer and electrically connected to the second conductive type semiconductor layer; and a first wiring electrode and a second wiring electrode located on the first contact electrode and the second contact electrode. Horizontal projections of the first wiring electrode and the second wiring electrode on the semiconductor epitaxial stacked layer fall within horizontal projections of the first contact electrode and the second contact electrode.

Abstract: A radar device includes a radar base and a radar module. The radar module is mounted at the radar base and configured to rotate relative to the radar base around a rotation axis. The radar module includes an antenna assembly, a signal processing circuit board, and a rotation installation base. The antenna assembly and the signal processing circuit board are arranged oppositely at an interval and jointly enclose to form an accommodation space. The rotation installation base is connected to the antenna assembly and the signal processing circuit board and is located in the accommodation space. The radar base is at least partially located in the accommodation space and arranged opposite to the rotation installation base.

Abstract: A light-emitting element and a light-emitting device are provided. The light-emitting element includes an epitaxial layer, an insulating layer formed on a surface of the epitaxial layer, and an electrode structure. The electrode structure includes a first electrode connected to a first conductivity type semiconductor layer and a second electrode connected to a second conductivity type semiconductor layer. The electrode structure includes a wiring portion and a connecting portion. The wiring portion is located above the insulating layer. The connecting portion penetrates through the insulating layer from an edge of the wiring portion and extends towards the epitaxial layer. The connecting portion is arranged to extend from the edge of the wiring portion towards the epitaxial layer. Further, a projection of the wiring portion on a front surface of the substrate does not overlap a projection of the connecting portion on the front surface of the substrate.

Abstract: A semiconductor light-emitting element and a light-emitting device thereof are provided. The semiconductor light-emitting element includes a transparent substrate, a transparent bonding layer, and a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer, and a second semiconductor layer. The transparent bonding layer is located between the transparent substrate and the semiconductor laminated layer. The transparent substrate has a first surface facing towards the semiconductor laminated layer, and the first surface has an uneven structure. The semiconductor laminated layer has a first surface facing towards the transparent substrate. The transparent bonding layer includes a first bonding layer in contact with the first surface of the transparent substrate, and a refractive index of the first bonding layer is lower than that of the transparent substrate.

Abstract: A light-emitting diode (LED) chip includes a semiconductor laminated layer including a first semiconductor layer, a light-emitting layer and a second semiconductor layer arranged from bottom to top, a transparent conductive layer disposed on the semiconductor laminated layer, a transparent bonding layer disposed on the transparent conductive layer, and a transparent substrate disposed on the transparent bonding layer. The second semiconductor layer includes a first sublayer and a second sublayer disposed on a part of an upper surface of the first sublayer, and a doping concentration of the first sublayer is lower than that of the second sublayer. The transparent conductive layer is in contact with an upper surface of the second sublayer and a part of the upper surface of the first sublayer around the second sublayer. The LED chip can improve the manufacturing yield and ensure the ohmic contact and uniform lateral current spreading.

Abstract: A flip-chip light-emitting device includes a transparent substrate, an epitaxial structure, a transparent dielectric layer, a plurality of first contact electrodes, multiple second contact electrodes, a metallic reflection layer, a first insulating layer, and an electrode pad region. The epitaxial structure is formed on the transparent substrate, and includes a first type semiconductor layer, an active layer, and a second type semiconductor layer. The first and second contact electrodes are embedded in the transparent dielectric layer, and respectively connected to the first and second type semiconductor layers. The second and first contact electrodes are arranged in an array. The second contact electrodes are disposed in a region perpendicularly below the first pad and are distributed along a circular ring that is concentric with one of the first contact electrodes. A light emitting module includes a circuit board, and the flip-chip light emitting device is mounted on the circuit board.

Abstract: The light-emitting device includes a substrate, a light-emitting chip unit formed on the substrate and including multiple chips, an isolation groove extending in a first direction and separating two adjacent ones of the chips, and a bridging structure. The isolation groove is defined by a bottom and two sidewalls and has a first groove section and a second groove section arranged in the first direction. The first groove section has a width in a width direction perpendicular to the first direction that is greater than a width of the second groove section in the width direction. At the first groove section, one of the sidewalls has a curved portion. The bridging structure is formed on the bottom and the sidewalls, covers the curved portion, and electrically connects the two adjacent ones of the chips.

Abstract: Bioconjugates and methods of making bioconjugates are provided, wherein the bioconjugates comprise glucose oxidase and nanoparticles that can kill tumor cells. For example, glucose oxidase-iron oxide bioconjugates can produce reactive oxygen species from blood glucose, causing cell death. The use of superparamagnetic iron oxide nanoparticles can provide magnetic resonance imaging guidance to facilitate imaging-guided drug delivery and combine diagnostics with therapy.

Abstract: A light-emitting device includes a semiconductor substrate, an epitaxial structure that has a first surface facing the semiconductor substrate and a second surface opposite to the first surface, and a transparent bonding structure that is disposed between the first surface and the semiconductor substrate. The transparent bonding structure has a first bonding surface facing the first surface of the epitaxial structure and a second bonding surface opposite to the first bonding surface, and has a slit extending from the first bonding surface toward the second bonding surface and terminating at a position that is a distance away from the second bonding surface. A method for manufacturing a light-emitting device is also provided.

Abstract: An operating method of an aerial vehicle may comprise obtaining target parameters, the target parameters being acquired by an on-board sensor of the aerial vehicle during movement of the aerial vehicle, the target parameters comprising a distance between the aerial vehicle and a target object and an extension direction of the target object; determining a flight path of the aerial vehicle based on the target parameters; and controlling the aerial vehicle to perform an operation based on the flight path of the aerial vehicle.

Abstract: The present disclosure provides a hydrogen evolution electrode and a preparation method thereof. The preparation method includes the following steps: providing an electrolyte including Co(NO3)2·6H2O with a Co(NO3)2 concentration of 0.005 mol L?1 to 0.015 mol L?1, MnCl2·4H2O with a MnCl2 concentration of 0.005 mol L?1 to 0.01 mol L?1, KCl with a concentration of 0.003 mol L?1 to 0.008 mol L?1, and CH3CSNH2 with a concentration of 0.04 mol L?1 to 0.06 mol L?1; adjusting the electrolyte to a pH value of 6 to 7; providing a cathode in the form of a substrate; and conducting electrolysis in a cyclic voltammetry mode, thereby preparing the electrode for hydrogen production by water electrolysis through electrochemical deposition of a Co9-xMnxS8 nanosheet catalyst on the cathode substrate, where 1?X?7.

Abstract: An analog signal processing circuit can include a front-stage processing module configured to process an analog signal to generate a first differential signal; at least one switched capacitor circuit, coupled with the front-stage processing module to receive the first differential signal, and configured to integrate or sample and hold the first differential signal to generate a second differential signal; and where the front-stage processing module and the at least one switched capacitor circuit receive synchronous control signals, the front-stage processing module chops the analog signal according to the control signals, and the at least one switched capacitor circuit is in different operating modes at a first phase and a second phase of an operation cycle of the control signals, in order to eliminate DC offset voltages of the front-stage processing module and the at least one switched capacitor circuit.

Abstract: A light-emitting device includes a semiconductor structure having a first semiconductor layer, an active layer, and a second semiconductor layer. The second semiconductor layer and the active layer formed on a top surface of the first semiconductor layer exposes a portion of the top surface. A first strip electrode is connected to the exposed top surface. A second strip electrode is connected to the second semiconductor layer. When first and second electrodes are projected on a plane, two parallel lines, that contact two opposite ends of the first electrode and perpendicularly intersect a straight line connecting between two opposite ends of the second electrode, define on the straight line a length, which does not extend beyond a distance between the two opposite ends of the second electrode.

Abstract: An integrator and an analog-to-digital converter are provided. The analog-to-digital converter includes the integrator, a comparison circuit and a control logic circuit. The integrator includes an operational amplifier, offset capacitors, input capacitors, integral capacitors and controllable switches. The input capacitors and the integral capacitors are connected to the operational amplifier via controllable switches, so that the integrator operates in various operation modes. Operation states of the offset capacitors in a first phase and a second phase of an operation cycle are controlled by switching on or off the controllable switches. Therefore, an offset voltage of the integrator is eliminated, and conversion efficiency and conversion accuracy of the analog-to-digital converter is improved.

Abstract: Embodiments of the present application are to provide a method for detecting wireless network security. The method comprises: establishing a wireless connection between a user equipment and a target wireless access point; obtaining security detection information on a wireless local area network where the user equipment is located; and classifying the security detection information and determining security status information corresponding to the wireless local area network based on the security detection information. The present application detects the connected wireless network, obtains corresponding security detection information based on security detection items, and classifies the security detection information and determines security status information corresponding to the wireless local area network according to the security detection information.