Abstract: A ripple pre-amplification based fully integrated LDO pertains to the technical field of power management. The positive input terminal of a transconductance amplifier is connected to a reference voltage Vref, and the negative input terminal of the transconductance amplifier is connected to the feedback voltage Vfb. The output terminal of the transconductance amplifier is connected to the negative input terminal of a transimpedance amplifier and the negative input terminal of an error amplifier. The positive input terminal of the transimpedance amplifier is connected to the ground GND, and the output terminal of the transimpedance amplifier is connected to the positive input terminal of the error amplifier. The gate terminal of the power transistor MP is connected to the output terminal of the error amplifier, the source terminal of the power transistor MP is connected to an input voltage VIN, and the drain terminal of the power transistor MP is grounded.

Abstract: A ripple pre-amplification based fully integrated LDO pertains to the technical field of power management. The positive input terminal of a transconductance amplifier is connected to a reference voltage Vref, and the negative input terminal of the transconductance amplifier is connected to the feedback voltage Vfb. The output terminal of the transconductance amplifier is connected to the negative input terminal of a transimpedance amplifier and the negative input terminal of an error amplifier. The positive input terminal of the transimpedance amplifier is connected to the ground GND, and the output terminal of the transimpedance amplifier is connected to the positive input terminal of the error amplifier. The gate terminal of the power transistor MP is connected to the output terminal of the error amplifier, the source terminal of the power transistor MP is connected to an input voltage VIN, and the drain terminal of the power transistor MP is grounded.

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.

Abstract: A low-dropout regulator with super transconductance structure relates to the field of power management technology. The super-transconductance structure refers to the circuit structure in which the voltage signal is converted into a current signal and amplified with a high magnification. The error amplifier EA in the present invention uses the super transconductance structure. The differential input pair of the error amplifier EA samples the difference between the feedback voltage VFB and the dynamic reference voltage VREF1. The difference is converted into a small signal current, which goes through a first-stage of current mirror to be amplified by K1, and through a second-stage of current mirror to be amplified by K2. The amplified signal is used to regulate the gate of the adjustment transistor MP. The error amplifier EA with the super transconductance structure is used to expand the bandwidth of the error amplifier EA.

Abstract: A composition comprising a silicone oil or fluorosilicone fluid infused in a cross-linked silicone resin matrix. The silicone oil or fluorosilicone fluid may comprise a linear or branched polymeric siloxane that may be functionalized with one or more of: alkyl, fluoroalkyl, aryl, benzyl, halo, hydride, hydroxyl, -alkyl-OH, -alkyl-SH, halo, -aryl-halogen, -alkyl-COOH, -alkyl(COOH)-alkyl-COO-alkyl, alkenyl, vinyl, -alkyl-acryloyl, -alkylamino, -alkyl-NH-alkyl-NH2, -alkyl-OOC-NH-alkyl-NCO, -alkyl-O-oxiranyl, monofluoromethyl, difluoromethyl, trifluoromethyl, or alkeneoxide co-polymer.

Abstract: Single-unit EEG sensors contain multiple closely spaced dry electrodes that can hook onto skin and associated electronic circuitry such as amplifiers, A/D convertors, wireless transmitters, and a power source such as a battery. The electrodes can be separated by about 20 mm or less, and the associated circuitry can be situated within a volume defined by the multiple electrodes. The single-unit sensors hook onto the skin using a tooth surface so that a rotation of the sensor secures and electrically connects the sensor to the skin.

Abstract: A system for treating waste water includes a waste water inlet, a pretreatment system in fluid communication with the waste water inlet, which is adapted to reduce the concentration of at least one of suspended solids, oil and grease, and a crystallization system downstream of the pretreatment system. A method for treating waste water include introducing the waste water into a pretreatment system being adapted to reduce the concentration of at least one of suspended solids, oil and grease, and introducing liquid effluent from the pretreatment system to a crystallization system.

Abstract: A composition comprising a silicone oil or fluorosilicone fluid infused in a cross-linked silicone resin matrix. The silicone oil or fluorosilicone fluid may comprise a linear or branched polymeric siloxane that may be functionalized with one or more of: alkyl, fluoroalkyl, aryl, benzyl, halo, hydride, hydroxyl, -alkyl-OH, -alkyl-SH, halo, -aryl-halogen, -alkyl-COOH, -alkyl(COOH)-alkyl-COO-alkyl, alkenyl, vinyl, -alkyl-acryloyl, -alkylamino, -alkyl-NH-alkyl-NH2, -alkyl-OOC—NH-alkyl-NCO, -alkyl-O-oxiranyl, monofluoromethyl, difluoromethyl, trifluoromethyl, or alkeneoxide co-polymer.

Abstract: Product, method of making product, and technique for using product to separate oil from water via a filter, such as cotton, polyester, or leather, coated with a chemical that blocks oil while allowing water to pass therethrough.

Abstract: Durable superhydrophobic coating composition having a composition ranging from about 10 to about 80 w.t. % of an acrylic polymer resin, from about 5 to about 40 w.t. % of a polysiloxane oil, from about 1 to about 50 w.t. % of hydrophobic particles, from about 0.1 to about 10 w.t. % metal oxides, and the remainder being one or more solvents and optionally other additives. Methods of making the coating, as well as coated substrates, are also provided.

Abstract: Product, method of making product, and technique for using product to separate oil from water via a filter, such as cotton, polyester, or leather, coated with a chemical that blocks oil while allowing water to pass therethrough.

Abstract: Durable superhydrophobic coating composition having a composition ranging from about 10 to about 80 w.t. % of an acrylic polymer resin, from about 5 to about 40 w.t. % of a polysiloxane oil, from about 1 to about 50 w.t. % of hydrophobic particles, from about 0.1 to about 10 w.t. % metal oxides, and the remainder being one or more solvents and optionally other additives. Methods of making the coating, as well as coated substrates, are also provided.

Abstract: Superhydrophobic coating compositions are provided. The compositions comprise nanoparticles between 5-100 nm in size and a polymeric binder. The compositions are effective in preventing ice formation on the surface of various substrates.

Abstract: A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.

Abstract: A method of etching silicon carbide using a nonmetallic mask layer. The method includes providing a silicon carbide substrate; forming a non-metallic mask layer by applying a layer of material on the substrate; patterning the mask layer to expose underlying areas of the substrate; and etching the underlying areas of the substrate with a plasma at a first rate, while etching the mask layer at a rate lower than the first rate.