Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

Abstract: Examples disclosed herein relate to multi-wavelength semiconductor lasers. In some examples disclosed herein, a multi-wavelength semiconductor laser may include a silicon-on-insulator (SOI) substrate and a quantum dot (QD) layer above the SOI substrate. The QD layer may include and active gain region and may have at least one angled junction at one end of the QD layer. The SOI substrate may include a waveguide in an upper silicon layer and a mode converter to facilitate optical coupling of a lasing mode to the waveguide.

Abstract: One example includes an optical device system. The system includes a waveguide that includes a fixed waveguide portion to propagate an optical signal, a semiconductor membrane layer, and a tunable air gap that separates the fixed waveguide portion and the semiconductor membrane layer. The system also includes an optical tuning system to move the semiconductor membrane layer with respect to the fixed waveguide portion in response to a control signal to control a separation distance of the tunable air gap to tune a characteristic of the optical signal.

Abstract: In example implementations of a heterogeneous substrate, the heterogeneous substrate includes a first material having an air trench, a second material coupled to the first material, a dielectric mask on a first portion of the second material and an active region that is grown on a remaining portion of the second material. An air gap may be formed in the air trench by the second material coupled to the first material. Defects in the second material may be contained to an area below the dielectric mask and the active region may remain defect free.

Abstract: An example system includes a first ring resonator element for imparting optical gain to a light signal. The example system farther includes a second ring resonator element optically coupled to the first ring resonator element for modulating the light signal. A waveguide can be optically coupled to one of the first ring resonator element or the second ring resonator element for receiving the light signal output from the one of the first ring resonator element or the second ring resonator element, and transmitting the received light signal.

Abstract: Compact photonics platforms and methods of forming the same are provided. An example of a compact photonics platform includes a layered structure having an active region along a longitudinal axis, a facet having an angle no less than a critical angle formed at least one longitudinal end of the active region, and a waveguide having at least one grating coupler positioned in alignment with the angled facet to couple light out to or in from the waveguide.

Abstract: According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry.

Abstract: Examples include hybrid silicon photonic device structures. Some examples include a method of integrating a photodetector with a photonic device on a silicon wafer to make a hybrid silicon photonic device structure. A dielectric layer is established on the silicon wafer. A pit is formed in a portion of the dielectric layer and the silicon wafer, wherein a bottom of the pit is silicon. A germanium layer is grown in the pit such that a top of the germanium layer is lower than a top of the silicon wafer. The germanium layer comprises the photodetector. A photonic device material that comprises the photonic device is bonded to the silicon wafer without planarization of the silicon wafer.

Abstract: Examples disclosed herein relate to optical driver circuits. In some of the disclosed examples, an optical driver circuit includes a pre-driver circuit and a main driver circuit. The pre-driver circuit may include a pattern generator and at least one serializer to generate a main modulation signal and an inverted delayed modulation signal. The main driver circuit may include a level controller to control amplitudes of pre-emphasis on rising and falling edges of a modulation signal output and an equalization controller to transition the modulation signal output from the pre-emphasis amplitudes to main modulation amplitudes using the inverted delayed modulation signal.

Abstract: An example device in accordance with an aspect of the present disclosure includes a first layer and a second layer to be bonded to the first layer. The first and second layers are materials that generate gas byproducts when bonded, and the first and/or second layers is/are compatible with photonic device operation based on a separation distance. At least one bonding interface layer is to establish the separation distance for photonic device operation, and is to prevent gas trapping and to facilitate bonding between the first layer and the second layer.

Abstract: Examples herein relate to semiconductor devices having contacts that provide low contact resistance for both p-type and n-type materials. An example semiconductor device includes a semiconductor device layer having at least one of a p-type material or a n-type material. A contact is manufactured on the semiconductor device layer with a complementary metal-oxide-semiconductor process. The contact includes a first layer having palladium coupled with a surface of the semiconductor device layer, a conducting second layer coupled with the first layer, and a third layer having germanium coupled with the second conducting layer.

Abstract: A polymer-clad optical modulator includes a substrate comprising an insulating material; a silicon microring on the substrate; silicon waveguides on the substrate adjacent the silicon microring; an electro-optic polymer covering the silicon microring and the silicon waveguide; and an electrical contact on top of the electro-optic polymer. The silicon microring or a portion of an adjacent silicon layer is lightly doped. A polymer-clad depletion type optical modulator and a polymer-clad carrier injection type optical modulator, each employing the lightly doped silicon microring or an adjacent lightly doped silicon layer, are also described.

Abstract: According to an example of the present disclosure a semiconductor laser diode includes a layer of graphene between an active laser region and a semiconductor substrate structure. The semiconductor laser diode may further include a first pair of electrodes to apply a potential difference across the active laser region and a second pair of electrodes to apply a potential difference across the layer of graphene.

Abstract: An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

Abstract: An example device in accordance with an aspect of the present disclosure includes at least one dielectric layer sandwiched between first and second layers, to provide a dielectric characteristic for the device. At least one interface layer, disposed between the at least one dielectric layer and at least one of i) the first layer, and ii) the second layer, is to serve as bond enhancement between the at least one dielectric layer and other layers.

Abstract: An optical system includes an output waveguide to propagate an optical output signal and a plurality of ring laser systems. Each of the plurality of ring laser systems includes a ring laser to generate a ring laser optical signal and a local waveguide. The ring laser can be optically coupled to the output waveguide to provide a first portion of the ring laser optical signal on the output waveguide as part of the optical output signal, and can be optically coupled to the local waveguide to provide a second portion of the ring laser optical signal on the local waveguide. Each of the plurality of ring laser systems can be to control a phase of the second portion of the ring laser optical signal to provide constructive interference with the ring laser optical signal at an optical coupling of the ring laser and the local waveguide.

Abstract: An example device in accordance with an aspect of the present disclosure includes a first semiconductor layer disposed on a substrate, a dielectric layer disposed between the first semiconductor layer and a second semiconductor layer dissimilar from the first semiconductor layer. A capacitor is formed of at least a portion of the first semiconductor layer, the dielectric layer, and the second semiconductor layer, and is to be included in an optical waveguide resonator.

Abstract: A multilayer device includes a substrate and a first layer disposed on the substrate. A trench extends through one or both of the substrate and the first layer. The trench has a first sidewall spaced apart from a second sidewall, each sidewall extending from an upper surface of the substrate to a lower surface of the first layer. An optically active region is disposed on the first layer overlying the trench, such that at least a portion of the optically active region is located within a set of lines corresponding to the sidewalls of the trench.

Abstract: A device includes a substrate layer, a diamond layer, and a device layer. The device layer is patterned. The diamond layer is to conform to a pattern associated with the device layer.

Abstract: Plasmonic avalanche photodetection employs an optical antenna and an avalanche photodiode (APD) coupled to the optical antenna. Hot carriers generated by light incident on the optical antenna are received in an avalanche multiplication region of the APD where avalanche multiplication of the hot carriers is provided.