Patents by Inventor Dian Sugiarto
Dian Sugiarto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7745328Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: October 21, 2008Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Publication number: 20090053902Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: October 21, 2008Publication date: February 26, 2009Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7465659Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: June 23, 2006Date of Patent: December 16, 2008Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7459404Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: GrantFiled: April 18, 2006Date of Patent: December 2, 2008Assignee: Applied Materials, Inc.Inventors: Lihua Li, Tzu-Fang Huang, Jerry Sugiarto, legal representative, Li-Qun Xia, Peter Wai-Man Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Dian Sugiarto
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Patent number: 7157384Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: GrantFiled: December 22, 2004Date of Patent: January 2, 2007Assignee: Applied Materials, Inc.Inventors: Kang Sub Yim, Melissa M. Tam, Dian Sugiarto, Chi-I Lang, Peter Wai-Man Lee, Li-Qun Xia
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Patent number: 7153787Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: January 27, 2005Date of Patent: December 26, 2006Assignee: Applied Materials, Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Publication number: 20060246737Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: June 23, 2006Publication date: November 2, 2006Inventors: Kang Yim, Melissa Tam, Dian Sugiarto, Chi-I Lang, Peter Lee, Li-Qun Xia
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Patent number: 7117064Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: GrantFiled: February 21, 2006Date of Patent: October 3, 2006Assignee: Applied Materials, Inc.Inventors: Srinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20060189162Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: ApplicationFiled: April 18, 2006Publication date: August 24, 2006Inventors: Lihua Huang, Tzu-Fang Huang, Dian Sugiarto, Jerry Sugiarto, Li-qun Xia, Peter Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park
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Publication number: 20060144334Abstract: A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.Type: ApplicationFiled: March 7, 2006Publication date: July 6, 2006Inventors: Kang Yim, Soovo Sen, Dian Sugiarto, Peter Lee, Ellie Yieh
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Publication number: 20060141805Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: ApplicationFiled: February 21, 2006Publication date: June 29, 2006Inventors: Srinivas Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Patent number: 7030041Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: GrantFiled: March 15, 2004Date of Patent: April 18, 2006Assignee: Applied Materials Inc.Inventors: Lihua Li, Tzu-Fang Huang, Jerry Sugiarto, legal representative, Li-Qun Xia, Peter Wai-Man Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Dian Sugiarto, deceased
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Patent number: 7008484Abstract: A showerhead adapted for distributing gases into a process chamber and a method for forming dielectric layers on a substrate are generally provided. In one embodiment, a showerhead for distributing gases in a processing chamber includes an annular body coupled between a disk and a mounting flange. The disk has a plurality of holes formed therethrough. A lip extends from a side of the disk opposite the annular body and away from the mounting flange. The showerhead may be used for the deposition of dielectric materials on a substrate. In one embodiment, silicon nitride and silicon oxide layers are formed on the substrate without removing the substrate from a processing chamber utilizing the showerhead of the present invention.Type: GrantFiled: May 6, 2002Date of Patent: March 7, 2006Assignee: Applied Materials Inc.Inventors: Kang Sub Yim, Soovo Sen, Dian Sugiarto, Peter Lee, Ellie Yieh
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Patent number: 7001850Abstract: A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.Type: GrantFiled: July 20, 2004Date of Patent: February 21, 2006Assignee: Applied Materials Inc.Inventors: Srinivas D Nemani, Li-Qun Xia, Dian Sugiarto, Ellie Yieh, Ping Xu, Francimar Campana-Schmitt, Jia Lee
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Publication number: 20050202685Abstract: Methods are provided for processing a substrate for depositing an adhesion layer having a low dielectric constant between two low k dielectric layers. In one aspect, the invention provides a method for processing a substrate including introducing an organosilicon compound and an oxidizing gas at a first ratio of organosilicon compound to oxidizing gas into the processing chamber, generating a plasma of the oxidizing gas and the organosilicon compound to form an initiation layer on a barrier layer comprising at least silicon and carbon, introducing the organosilicon compound and the oxidizing gas at a second ratio of organosilicon compound to oxidizing gas greater than the first ratio into the processing chamber, and depositing a first dielectric layer adjacent the dielectric initiation layer.Type: ApplicationFiled: March 15, 2004Publication date: September 15, 2005Inventors: Lihua Huang, Tzu-Fang Huang, Dian Sugiarto, Li-Qun Xia, Peter Lee, Hichem M'Saad, Zhenjiang Cui, Sohyun Park, Jerry Sugiarto
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Patent number: 6943127Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: GrantFiled: November 22, 2002Date of Patent: September 13, 2005Assignee: Applied Materials Inc.Inventors: Seon-Mee Cho, Peter Wai-Man Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Publication number: 20050153572Abstract: A low dielectric constant film having silicon-carbon bonds and dielectric constant of about 3.0 or less, preferably about 2.5 or less, is provided. The low dielectric constant film is deposited by reacting a cyclic organosilicon compound and an aliphatic organosilicon compound with an oxidizing gas while applying RF power. The carbon content of the deposited film is between about 10 and about 30 atomic percent excluding hydrogen atoms, and is preferably between about 10 and about 20 atomic percent excluding hydrogen atoms.Type: ApplicationFiled: January 27, 2005Publication date: July 14, 2005Inventors: Seon-Mee Cho, Peter Lee, Chi-I Lang, Dian Sugiarto, Chen-An Chen, Li-Qun Xia, Shankar Venkataraman, Ellie Yieh
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Patent number: 6911403Abstract: A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.Type: GrantFiled: August 20, 2003Date of Patent: June 28, 2005Assignee: Applied Materials, Inc.Inventors: Lihua Li, Tsutomu Tanaka, Tzu-Fang Huang, Li-Qun Xia, Dian Sugiarto, Visweswaren Sivaramakrishnan, Peter Wai-Man Lee, Mario David Silvetti
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Publication number: 20050130440Abstract: Methods are provided for depositing a silicon carbide layer having significantly reduced current leakage. The silicon carbide layer may be a barrier layer or part of a barrier bilayer that also includes a barrier layer. Methods for depositing oxygen-doped silicon carbide barrier layers are also provided. The silicon carbide layer may be deposited by reacting a gas mixture comprising an organosilicon compound, an aliphatic hydrocarbon comprising a carbon-carbon double bond or a carbon-carbon triple bond, and optionally, helium in a plasma. Alternatively, the silicon carbide layer may be deposited by reacting a gas mixture comprising hydrogen or argon and an organosilicon compound in a plasma.Type: ApplicationFiled: December 22, 2004Publication date: June 16, 2005Inventors: Kang Yim, Melissa Tam, Dian Sugiarto, Chi-I Lang, Peter Lee, Li-Qun Xia
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Publication number: 20050042885Abstract: A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.Type: ApplicationFiled: August 20, 2003Publication date: February 24, 2005Inventors: Lihua Li, Tsutomu Tanaka, Tzu-Fang Huang, Li-Qun Xia, Dian Sugiarto, Visweswaren Sivaramakrishnan, Peter Lee, Mario Silvetti