Patents by Inventor Diane C. Freeman
Diane C. Freeman has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8207063Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.Type: GrantFiled: January 26, 2007Date of Patent: June 26, 2012Assignee: Eastman Kodak CompanyInventors: Peter J. Cowdery-Corvan, David H. Levy, Shelby F. Nelson, Diane C. Freeman, Thomas D. Pawlik
-
Patent number: 8187915Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.Type: GrantFiled: March 25, 2010Date of Patent: May 29, 2012Assignee: Eastman Kodak CompanyInventors: Shiying Zheng, Deepak Shukla, Diane C. Freeman
-
Patent number: 8129098Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.Type: GrantFiled: November 20, 2007Date of Patent: March 6, 2012Assignee: Eastman Kodak CompanyInventors: Lyn M. Irving, Diane C. Freeman, Peter J. Cowdery-Corvan, Cheng Yang, David H. Levy
-
Patent number: 8030212Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: September 26, 2007Date of Patent: October 4, 2011Assignee: Eastman Kodak CompanyInventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
-
Patent number: 8017183Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after or simultaneously with or introducing applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: September 26, 2007Date of Patent: September 13, 2011Assignee: Eastman Kodak CompanyInventors: Cheng Yang, Lyn M. Irving, David H. Levy, Peter J. Cowdery-Corvan, Diane C. Freeman
-
Patent number: 7981719Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: GrantFiled: May 29, 2009Date of Patent: July 19, 2011Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Shelby F. Nelson, Diane C. Freeman
-
Patent number: 7972898Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.Type: GrantFiled: September 26, 2007Date of Patent: July 5, 2011Assignee: Eastman Kodak CompanyInventors: Peter J. Cowdery-Corvan, David H. Levy, Thomas D. Pawlik, Diane C. Freeman, Shelby F. Nelson
-
Patent number: 7858144Abstract: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.Type: GrantFiled: September 26, 2007Date of Patent: December 28, 2010Assignee: Eastman Kodak CompanyInventors: Diane C. Freeman, David H. Levy, Peter J. Cowdery-Corvan
-
Patent number: 7851380Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.Type: GrantFiled: September 26, 2007Date of Patent: December 14, 2010Assignee: Eastman Kodak CompanyInventors: Shelby F. Nelson, David H. Levy, Lyn M. Irving, Peter J. Cowdery-Corvan, Diane C. Freeman, Carolyn R. Ellinger
-
Patent number: 7846644Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: GrantFiled: November 20, 2007Date of Patent: December 7, 2010Assignee: Eastman Kodak CompanyInventors: Lyn M. Irving, David H. Levy, Diane C. Freeman, Cheng Yang, Peter J. Cowdery-Corvan
-
Patent number: 7807994Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: GrantFiled: August 21, 2009Date of Patent: October 5, 2010Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Diane C. Freeman, Shelby F. Nelson, Jeffrey T. Carey, Wendy G. Ahearn
-
Publication number: 20100178728Abstract: A process for fabricating a thin film semiconductor device includes the following steps, but not necessarily in the noted order. Firstly, a thin film of organic semiconductor material is deposited onto a substrate. This thin film of organic semiconductor material comprises organic semiconductor material that comprises one or more aryl dicarboxylic diimidazole-based compounds of claim 1 such that the film exhibits a field effect electron mobility that is greater than 0.005 cm2/Vs. Then, the process includes forming a spaced apart source electrode and drain electrode, wherein the source electrode and the drain electrode are separated by and electrically connected with, the n-channel semiconductor film. A gate electrode is then formed, spaced apart from the semiconductor material. One or more of the thin film semiconductor devices (or transistors) can be incorporated into an electronic device.Type: ApplicationFiled: March 25, 2010Publication date: July 15, 2010Inventors: Shiying Zheng, Deepak Shukla, Diane C. Freeman
-
Patent number: 7745821Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.Type: GrantFiled: May 15, 2007Date of Patent: June 29, 2010Assignee: Eastman Kodak CompanyInventors: Shiying Zheng, Deepak Shukla, Diane C. Freeman
-
Publication number: 20090312553Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: ApplicationFiled: August 21, 2009Publication date: December 17, 2009Inventors: Deepak Shukla, Diane C. Freeman, Shelby F. Nelson, Jeffrey T. Carey, Wendy G. Ahearn
-
Patent number: 7629605Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, an aromatic moiety, at least one of which moieties is substituted with at least one electron donating group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: GrantFiled: October 31, 2005Date of Patent: December 8, 2009Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Diane C. Freeman, Shelby F. Nelson, Jeffrey T. Carey, Wendy G. Ahearn
-
Publication number: 20090261323Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: ApplicationFiled: May 29, 2009Publication date: October 22, 2009Inventors: Deepak Shukla, Shelby F. Nelson, Diane C. Freeman
-
Patent number: 7579619Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted arylalkyl moiety. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.Type: GrantFiled: April 20, 2005Date of Patent: August 25, 2009Assignee: Eastman Kodak CompanyInventors: Deepak Shukla, Shelby F. Nelson, Diane C. Freeman
-
Publication number: 20090130608Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.Type: ApplicationFiled: November 20, 2007Publication date: May 21, 2009Inventors: Lyn M. Irving, David H. Levy, Diane C. Freeman, Cheng Yang, Peter J. Cowdery-Corvan
-
Publication number: 20090130609Abstract: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.Type: ApplicationFiled: November 20, 2007Publication date: May 21, 2009Inventors: Lyn M. Irving, Diane C. Freeman, Peter J. Cowdery-Corvan, Cheng Yang, David H. Levy
-
Publication number: 20090081842Abstract: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.Type: ApplicationFiled: September 26, 2007Publication date: March 26, 2009Inventors: Shelby F. Nelson, David H. Levy, Lyn M. Irving, Peter J. Cowdery-Corvan, Diane C. Freeman, Carolyn R. Ellinger