Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.

Abstract: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organosiloxane compound; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises fused-fluorene-containing materials. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising an organic semiconductor material that comprises an aryl dicarboxylic acid diimidazole-based compound. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 150° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide naphthalene-based compound having, attached to each of the imide nitrogen atoms, a substituted or unsubstituted alicyclic ring system, optionally substituted with electron donating groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a carbocyclic or heterocyclic aromatic ring system substituted with one or more fluorine-containing groups. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating ac thin film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A thin film transistor comprises a layer of organic semiconductor material comprising a tetracarboxylic diimide 3,4,9,10-perylene-based compound having, attached to each of the imide nitrogen atoms a substituted or unsubsitituted phenylalkyl group. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating an organic thin-film transistor device, preferably by sublimation or solution-phase deposition onto a substrate, wherein the substrate temperature is no more than 100° C.

Abstract: A digital printing method for printing photographic quality images employs a printhead having a plurality of recording elements at least some of which recording elements are arranged in a line. A recording sheet is moved relative to the printhead to form an image on the recording sheet. The recording sheet has parallel spaced side edges. A page of image data to be printed on the recording sheet is provided that represents an image having top, bottom and side edges to establish a substantially rectangular image. The image is formed on the recording sheet through lines or bands of recording sequences that form the image so that the top side edge of the image is formed at an oblique angle to the side edges of the recording sheet wherein the oblique angle is between 15 degrees and 75 degrees. Alternatively, the top side edge of the image is formed perpendicular to the side edges of the recording sheet through formation of the image by swaths of recording sequences that are oblique to the top edge of the image.

Abstract: The present invention resides in an apparatus (8) and method for maintaining a print head (10) at a substantially constant, closely spaced working distance (22) from a surface (17) of a printing receiver (16) during relative translational movement between the print head (10) and the receiver (16) along a predetermined path of movement for depositing liquid or ink droplets (12) onto the surface (17), the apparatus (8) including an actuator (20) connected to the print head (10) and controllably actuable for moving the print head (10) toward and away from the receiver (16), an element (35,36) for detecting a representative distance between the print head (10) and locations on the surface (17) of the receiver (16) along the path of movement and generating a signal having a value representative of or related to the representative distance, an element (46) for comparing the signal value to a reference; value representative of the working distance (22) for determining a difference between the signal value and the re

Abstract: An inkjet printing apparatus and method of operating an inkjet printhead provides an inkjet orifice of the printhead that is located within a predetermined spacing of less than 1000 micrometers, and more preferably in a range of 50-500 micrometers for printing high resolution images. Electrical drive signals are provided to the printhead, the drive signals being adapted to enable the printhead to generate a droplet. In response to the drive signals, a free spherical droplet is formed between the orifice and a receiver member and deposits a droplet upon the receiver member substantially without presence of an attached or detached ligament of printing liquid that would otherwise provide an artifact mark on the receiver member.

Abstract: An inkjet printing apparatus and method of operating an inkjet printhead provides an inkjet orifice of the printhead that is located within a predetermined spacing of less than 1000 micrometers, and more preferably in a range of 50 to less than 500 micrometers for printing high resolution images. Electrical drive signals are provided to the printhead, the drive signals being adapted to enable the printhead to generate a droplet. In response to the drive signals, a free droplet is formed between the orifice and a receiver member and deposits a droplet upon the receiver member substantially without presence of any satellites.

Abstract: An ink jet plate maker and proofer apparatus (66) and method adapted for printing a proof of a work to be printed, and making a printing plate (16) for printing the work, including a first element (68) including circuitry (70) controllably operable for generating ink drops of a first predetermined volume for printing the proof on a proofing receiver, and a second element (86) including circuitry (88) controllably operable for generating liquid drops of a second predetermined volume for image wise making or completing the printing plate (16), the second predetermined volume being different from the first predetermined volume.