Abstract: A device for limiting an alternating electric current includes a least one passive semiconductor configuration and a protection circuit. The semiconductor configuration is configured such that when a forward voltage is applied thereto, a forward current flows through the semiconductor configuration. The forward current increases monotonously with the forward voltage up to a saturation current at an associated saturation voltage. At a forward voltage above the saturation voltage, the forward current is limited to a limiting current that is smaller than the saturation current. The semiconductor configuration is further configured such that when a reverse voltage is applied, a reverse current flows through the passive semiconductor configuration.

Abstract: An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.

Abstract: A semiconductor configuration includes a first semiconductor region which has a predetermined conductivity type and a first surface. There is a contact region disposed on the first surface of the first semiconductor region. There is a second semiconductor region disposed within the first semiconductor region underneath the contact region which has a conductivity type opposite the predetermined conductivity type of the first semiconductor region. A first p-n junction having a first depletion zone is formed between the first semiconductor region and the second semiconductor region. The second semiconductor region extends further than the contact region in all directions parallel to the first surface of the first semiconductor region to form at least one lateral channel region with a bottom in the first semiconductor region. The at least one lateral channel region is bounded toward its bottom by the first depletion zone of the first p-n junction.

Abstract: A reaction chamber (2) is enclosed by a gas-tight wall (20), made of silicon carbide obtained by a CVD process at least on the inside (21) facing the reaction chamber (2). At least part of the silicon carbide of the wall (20) is sublimated and grown on a seed crystal (3) as a silicon carbide monocrystal (4).

Abstract: An n- or p-doped semiconductor region accommodates the depletion zone of an active area of the semiconductor component with a vertical extension dependent upon an applied blocking voltage. The junction termination for the active area is constituted with a semiconductor doped oppositely to the semiconductor region, and is arranged immediately adjacently around the active area on or in a surface of the semiconductor region. The lateral extension of the junction termination is greater than the maximum vertical extension of the depletion zone, and the semiconductor region as well as the junction termination are constituted with a semiconductor with a band gap of at least 2 eV.

Abstract: The thin film magnet head is to be guided over a recording medium to be magnetized perpendicularly, in which flux changes are to be registered along a track with a predetermined record wavelength and flux change density. The magnet head contains a flux-carrying, ring head-like guiding element with two magnet legs which constitute magnet poles which are arranged one behind the other and separated by a gap of predetermined width and having predetermined extents in the movement direction. With this magnet head the expanse for signal processing in a write/read channel is to be reduced. The magnet head fulfills this end by at least approximately satisfying the following relation:.lambda.*=g+max(A.sub.1, A.sub.2).lambda.* being the record wavelength which results for the value D.sub.p of the flux change density at which the read voltage of the magnet head is maximum; g, the width of the gap; and max(A.sub.1, A.sub.2) the greater value of the two extents (A.sub.1, A.sub.2) of the magnet poles.

Abstract: A magnetic storage device which includes a magnetizable storage disk, a read/write magnetic head arranged on a flying body and a track guidance system has a servo head formed on a long side face of the flying body in the form of a magneto restrictive sensor. Subsequent electronics keep the head on at least one separate guidance track.

Abstract: A magnetic head having layered structure for a recording medium for vertical magnetization contains a conductor body on a non-magnetic substrate for conducting the magnetic flux with two magnet legs, the end pieces of which form a thin main pole and a comparatively thicker auxiliary pole. The two magnetic poles are separated by an insulating gap layer of at least 5 .mu.m. This magnetic head and particularly its gap layer should be relatively simple to produce. Recesses are provided in the substrate to submerge at least the end piece of the auxiliary pole of one magnet leg and an adjoining part of this leg as well as at least part of the gap layer.

Abstract: A method for structuring silicon carbide by photolithography and plasma etching wherein a substrate of silicon carbide is covered on a flat side with a structured silicon layer, and the plasma etching is then carried out with a gaseous mixture of a halogenated hydrocarbon and oxygen, the oxygen being present in an amount of at least 40% and preferably 70 to 95% by volume.

Abstract: A touch selection pad contains a matrix of tactile sensors each of which contains a composite material with a pressure and direction-dependent electric conductivity and a dielectric material forming a capacitor. These are provided with column electrodes and row electrodes. When touched, each of the sensors creates a series circuit comprising a resistor formed of the composite material and a capacitor formed from the dielectric having a capacitance of preferably at least 50 pF. In this matrix of tactile sensors, the pressure-dependent resistance together with the associated fixed capacity serves as the measuring variable. The touch pad due to the small spacing between the sensors has a high resolution. It can be produced in a simple manner by sequentially depositing layers on a metalized carrier by means of a thin-film technique. The row and column electrodes can be etched out of a metalized plastic cover layer and a metalized carrier, respectively, by micro structuring techniques.

Abstract: A method for manufacturing a magnetic head by a thin-film technique which head comprises at least two magnet legs which have pole surfaces which face a recording medium and which lie in a common plane. With this method, a preliminary product of the magnetic head having end pieces of the legs which extend beyond this plane and which are spaced by a small gap, and an electrically conducting structure are applied in such a manner that this structure is separated, if the substrate body is processed by material removal from the side facing the recording medium, just when the plane of the pole surfaces has been reached, into two conductor parts electrically insulated from each other. With this method, the area portion required for the manufacture of a magnetic head on the substrate body is to be reduced.