Patents by Inventor Difeng Zhu
Difeng Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11830961Abstract: A germanium-on-silicon photodetector is fabricated by forming a thin silicon oxide layer on a silicon layer, and then forming a silicon nitride layer on the silicon oxide layer. A nitride dry etch process is used to etch an opening through the silicon nitride layer (through a photoresist mask). The nitride dry etch is stopped on the thin silicon oxide layer, preventing damage to the underlying silicon layer. A wet etch is then performed through the opening in the silicon nitride layer to remove the exposed silicon oxide layer. The wet etch exposes (and cleans) a portion of the underlying silicon layer. High-quality germanium is epitaxially grown over the exposed portion of the silicon layer, thereby providing a germanium structure that forms the intrinsic region of a PIN photodiode.Type: GrantFiled: September 2, 2018Date of Patent: November 28, 2023Assignee: Newport Fab, LLCInventors: Difeng Zhu, Edward J. Preisler
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Publication number: 20230082670Abstract: A photonics integrated circuit includes a first waveguide and a second waveguide. A portion of the first waveguide has a first cladding with a first refractive index. The second waveguide includes a second cladding with a second refractive index different from the first refractive index. Also disclosed is a test circuit for a photonics integrated circuit. The test circuit can be used to determine waveguide losses, and used to tune the waveguide losses.Type: ApplicationFiled: September 15, 2021Publication date: March 16, 2023Applicant: Intel CorporationInventors: Difeng Zhu, Razi Dehghannasiri, David Mathine, Eveline Rigo
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Patent number: 11081610Abstract: There are disclosed various implementations of an anode over cathode germanium and silicon photodiode including an N type silicon region formed in a silicon substrate, the N type silicon region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type silicon region, the P type germanium region being an anode of the photodiode. An anode contact of the photodiode is situated over the P type germanium region providing the anode. In some implementations, silicided cathode contacts are formed over the N type silicon region providing the cathode. In some implementations, a P type silicon cap is formed over the P type germanium region. In those implementations, a silicided anode contact may be situated on the P type silicon cap.Type: GrantFiled: August 6, 2019Date of Patent: August 3, 2021Assignee: Newport Fab, LLCInventors: Difeng Zhu, Edward Preisler
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Patent number: 10892373Abstract: There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type germanium region, the P type germanium region being an anode of the photodiode. The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.Type: GrantFiled: February 7, 2019Date of Patent: January 12, 2021Assignee: Newport Fab, LLCInventors: Difeng Zhu, Edward Preisler
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Patent number: 10892374Abstract: There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type germanium region, the P type germanium region being an anode of the photodiode. The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.Type: GrantFiled: June 2, 2020Date of Patent: January 12, 2021Assignee: Newport Fab, LLCInventors: Difeng Zhu, Edward Preisler
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Publication number: 20200295220Abstract: There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type germanium region, the P type germanium region being an anode of the photodiode. The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.Type: ApplicationFiled: June 2, 2020Publication date: September 17, 2020Inventors: Difeng Zhu, Edward Preisler
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Publication number: 20200259037Abstract: There are disclosed various implementations of an anode over cathode germanium and silicon photodiode including an N type silicon region formed in a silicon substrate, the N type silicon region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type silicon region, the P type germanium region being an anode of the photodiode. An anode contact of the photodiode is situated over the P type germanium region providing the anode. In some implementations, silicided cathode contacts are formed over the N type silicon region providing the cathode. In some implementations, a P type silicon cap is formed over the P type germanium region. In those implementations, a silicided anode contact may be situated on the P type silicon cap.Type: ApplicationFiled: August 6, 2019Publication date: August 13, 2020Inventors: Difeng Zhu, Edward Preisler
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Publication number: 20200259036Abstract: There are disclosed herein various implementations of a photodiode including a silicon substrate, and an N type germanium region situated over the silicon substrate, the N type germanium region being a cathode of the photodiode. In addition, the photodiode includes a P type germanium region situated over the N type germanium region, the P type germanium region being an anode of the photodiode. The photodiode also includes a P type silicon cap over the P type germanium region, an anode contact of the photodiode situated on the P type silicon cap, and one or more cathode contacts of the photodiode electrically connected to the N type germanium region.Type: ApplicationFiled: February 7, 2019Publication date: August 13, 2020Inventors: Difeng Zhu, Edward Preisler
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Publication number: 20200075792Abstract: A germanium-on-silicon photodetector is fabricated by forming a thin silicon oxide layer on a silicon layer, and then forming a silicon nitride layer on the silicon oxide layer. A nitride dry etch process is used to etch an opening through the silicon nitride layer (through a photoresist mask). The nitride dry etch is stopped on the thin silicon oxide layer, preventing damage to the underlying silicon layer. A wet etch is then performed through the opening in the silicon nitride layer to remove the exposed silicon oxide layer. The wet etch exposes (and cleans) a portion of the underlying silicon layer. High-quality germanium is epitaxially grown over the exposed portion of the silicon layer, thereby providing a germanium structure that forms the intrinsic region of a PIN photodiode.Type: ApplicationFiled: September 2, 2018Publication date: March 5, 2020Inventors: Difeng Zhu, Edward J. Preisler
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Patent number: 9450067Abstract: A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.Type: GrantFiled: August 14, 2015Date of Patent: September 20, 2016Assignee: Micron Technology, Inc.Inventor: Difeng Zhu
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Publication number: 20150349082Abstract: A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.Type: ApplicationFiled: August 14, 2015Publication date: December 3, 2015Inventor: Difeng Zhu
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Patent number: 9193816Abstract: Composite hydrogels and methods for making and using the composite hydrogels are provided. The composite hydrogels comprise graphene oxide flakes distributed in, and covalently bonded to, a thermo-responsive hydrogel polymer.Type: GrantFiled: November 30, 2011Date of Patent: November 24, 2015Assignee: WISCONSIN ALUMNI RESEARCH FOUNDATIONInventors: Hongrui Jiang, Chi-Wei Lo, Difeng Zhu
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Patent number: 9129798Abstract: A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.Type: GrantFiled: February 19, 2014Date of Patent: September 8, 2015Assignee: Micron Technology, Inc.Inventor: Difeng Zhu
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Publication number: 20150235841Abstract: A semiconductor structure comprising aluminum oxide. The semiconductor structure comprises a dielectric material overlying a substrate. The aluminum oxide overlies the dielectric material in a first region of the structure. A second region of the structure includes a first titanium nitride portion overlying the dielectric material, magnesium over the first titanium nitride portion, and a second titanium nitride portion over the magnesium. Methods of forming the semiconductor structure including aluminum oxide are also disclosed.Type: ApplicationFiled: February 19, 2014Publication date: August 20, 2015Applicant: Micron Technology, Inc.Inventor: Difeng Zhu
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Publication number: 20130137054Abstract: Composite hydrogels and methods for making and using the composite hydrogels are provided. The composite hydrogels comprise graphene oxide flakes distributed in, and covalently bonded to, a thermo-responsive hydrogel polymer.Type: ApplicationFiled: November 30, 2011Publication date: May 30, 2013Inventors: Hongrui Jiang, Chi-Wei Lo, Difeng Zhu